Toshiba Semiconductor and Storage Producten

SSM3J14TTE85LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.7A TSM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.35A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

TK6A53D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 525V 6A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

TK35A08N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 35A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

package: TO-220-3 Full Pack, Isolated Tab

TK14E65W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 690µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

package: TO-220-3

TK7S10N1Z,LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 48 mOhm @ 3.5A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TPH11003NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 32A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 5.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

2SA1588-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A USM

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
• Power - Max: 100mW
• Frequency - Transition: 200MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

package: SC-70, SOT-323

2SA1618-Y(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A SMV

• Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 80MHz
• Operating Temperature: 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

package: SC-74A, SOT-753

HN2D01JE(TE85L,F)

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA ESV

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1.6ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

package: SOT-553

TBD62004APG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.5A 16DIP

• Switch Type: General Purpose
• Number of Outputs: 7
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.8A
• Rds On (Typ): -
• Input Type: Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

package: 16-DIP (0.300", 7.62mm)

TC78H620FNG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: 1, 1/2
• Applications: General Purpose
• Current - Output: 1A
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 15 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-SSOP

package: 16-LSSOP (0.173", 4.40mm Width)

TB62216FTG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: PWM
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

package: 48-VFQFN Exposed Pad

TC78H610FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: DMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 15 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-SSOP

package: 16-LSSOP (0.173", 4.40mm Width)

TC58BVG0S3HBAI4

Toshiba Semiconductor and Storage

IC EEPROM 1GBIT 25NS 63FBGA

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-TFBGA (9x11)

package: 63-VFBGA

TC7SZ38F(T5L,JF,T)

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: Open Drain
• Voltage - Supply: 1.65 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: -, 32mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: SMV
• Package / Case: SC-74A, SOT-753

package: SC-74A, SOT-753

TD62083AFNG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SINK 8-CH 18-SSOP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 8/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 18-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 18-SSOP

package: 18-LSSOP (0.173", 4.40mm Width)

TD62003APG,N

Toshiba Semiconductor and Storage

IC DRIVER DARL SNK TTL 7CH 16DIP

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 7/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 0 V ~ 50 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

package: 16-DIP (0.300", 7.62mm)

DF2S16CT,L3F

Toshiba Semiconductor and Storage

TVS DIODE 12VWM

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 15.3V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 10pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2

package: SOD-882

TLP591B(C,F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 2.5KV PHVOLT 6-DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): -
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): 200µs, 3ms
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Photovoltaic
• Voltage - Output (Max): 7V
• Current - Output / Channel: 24µA
• Voltage - Forward (Vf) (Typ): 1.4V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
• Supplier Device Package: 6-DIP, 5 Lead

package: 6-DIP (0.300", 7.62mm), 5 Leads

TBD62785APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

package: 18-DIP (0.300", 7.62mm)

TC78B042FTG,EL

Toshiba Semiconductor and Storage

3 PHASE BLDC CONTROLLER

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Speed
• Output Configuration: High Side, Low Side
• Interface: PWM
• Technology: -
• Step Resolution: -
• Applications: Fan Controller
• Current - Output: 2mA
• Voltage - Supply: 6V ~ 16.5V
• Voltage - Load: 4.5V ~ 5.3V
• Operating Temperature: -40°C ~ 115°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-VQFN (5x5)

package: 32-VFQFN Exposed Pad

TMPM3HLFDAUG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
• Number of I/O: 57
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 12x12b SAR; D/A 2x8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

package: -

SSM6J503NU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFNB (2x2)
• Package / Case: 6-WDFN Exposed Pad

package: -

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RN4989FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=47KO

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 22kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -

RN1710JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

• Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

package: -

TPCA8045-H-T2L1-VM

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 46A 8SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 23A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

package: -

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TC62D748CFNAG-ELHB

Toshiba Semiconductor and Storage

IC

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): No
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: No
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 24-SSOP

package: -

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RN4901FE-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR4.7KOHM Q1BER

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

package: -