Taiwan Semiconductor Corporation Producten

BZD27C8V2PHRVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 1000MW, %, A

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1N4740AHB0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 10V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZD17C15P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 15V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 11V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1M120Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZT52C2V7-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 2.7V, 350MW, 5%, S

• Voltage - Zener (Nom) (Vz): 2.7V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZT52C36S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 200MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 25.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

BZX585B16 RSG

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 11.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

package: SC-79, SOD-523

BZX85C11 R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1300MW, 5%, D

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 8.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZV55C39 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 500MW, 5%, MM

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 28V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

package: DO-213AC, MINI-MELF, SOD-80

GBU404HD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

package: 4-SIP, GBU

DBLS106G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 1A DBLS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Current - Reverse Leakage @ Vr: 2 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

package: -

HS1MAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

2M14ZH

Taiwan Semiconductor Corporation

DIODE ZENER 14V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 14 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 5.5 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 10.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: -

Request a Quote

SDLW

Taiwan Semiconductor Corporation

0.8A, 200V, STANDARD RECOVERY RE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

UDZS7V5B

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 7.5 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 900 nA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: -

Request a Quote

SS26LW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 2A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

GBL206

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A GBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

package: -

SS32-R6

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 20 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

package: -

Request a Quote

TST20L120CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 10A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 120 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

TSPB15U50S

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 15A SMPC4.0

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 mA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.0
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

S4B-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

TS2937CP50

Taiwan Semiconductor Corporation

0.5A 5V ULTRA LOW DROPOUT VOLTAG

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 26V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.7V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 25 mA
• PSRR: -
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

package: -

Request a Quote

SIMLRHG

Taiwan Semiconductor Corporation

GLASS PASSIVATED SMD RECTIFIER

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

package: -

Request a Quote

UF1DLWH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

S5J-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

1SMA4759H

Taiwan Semiconductor Corporation

DIODE ZENER 62V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 62 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 125 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 47.1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: -

Request a Quote

HS1BL

Taiwan Semiconductor Corporation

50NS, 1A, 100V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

Request a Quote

HS1GH

Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -