Taiwan Semiconductor Corporation Producten

2M68Z B0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 2000MW, %, DO

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 75 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: DO-204AC, DO-15, Axial

BZD27C27P RQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±7.03%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD17C24P R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5.83%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1SMA4745HR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 16 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: DO-214AC, SMA

1SMB5955HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 3000MW, 5%,

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

package: DO-214AA, SMB

1N4756A R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N4739G A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C (TA)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

TSZL52C13 RWG

Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 200MW, 5%, 10

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1005 (2512 Metric)
• Supplier Device Package: 1005

package: 1005 (2512 Metric)

UDZS12B RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 200MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 90nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

BZV55B62 L1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 500MW, 2%, MM

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 150 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 47V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

package: DO-213AC, MINI-MELF, SOD-80

BZT52B16 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 500MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 45nA @ 11.2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

package: SOD-123F

DBLS158G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1.5A
• Current - Reverse Leakage @ Vr: 2µA @ 1200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: DBLS

package: 4-SMD, Gull Wing

TS4K60 D3G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: TS4K

package: 4-SIP, GBL

EABS1DH

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 1A ABS

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200 V
• Current - Average Rectified (Io): 1 A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

package: -

GBU606H

Taiwan Semiconductor Corporation

6A, 800V, STANDARD BRIDGE RECTIF

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-ESIP, GBU
• Supplier Device Package: GBU

package: -

2M20Z

Taiwan Semiconductor Corporation

DIODE ZENER 20V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 20 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 11 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 15.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

package: -

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HS2GAL

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 2A THIN SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: Thin SMA
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

BZT52C3V0S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 3 V
• Tolerance: ±5%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 9 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: -

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1PGSMB5947

Taiwan Semiconductor Corporation

DIODE ZENER 82V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 82 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 62.2 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

package: -

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SFA1006GH

Taiwan Semiconductor Corporation

35NS, 10A, 400V, SUPER FAST RECO

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

SFF1008G

Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

package: -

SFF1604G

Taiwan Semiconductor Corporation

DIODE ARRAY GP 200V 16A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io) (per Diode): 16A (DC)
• Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

package: -

SR209

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 2A DO204AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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KBP305G-C2

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 3A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 3 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

package: -

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HER102G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

1PGSMA4743

Taiwan Semiconductor Corporation

DIODE ZENER 13V 1.25W DO214AC

• Voltage - Zener (Nom) (Vz): 13 V
• Tolerance: ±5%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 9.9 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: -

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UF1JLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD123W

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 600 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

BZT52C3V6-G

Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

• Voltage - Zener (Nom) (Vz): 3.6 V
• Tolerance: ±5%
• Power - Max: 350 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: -

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