Taiwan Semiconductor Corporation Producten

BZD27C7V5P RUG

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 7.45V
• Tolerance: ±6.04%
• Power - Max: 1W
• Impedance (Max) (Zzt): 2 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

BZD27C20P RUG

Taiwan Semiconductor Corporation

DIODE, ZENER, 20V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 20V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 15V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1SMB5951 R5G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 3000MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 360 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

package: DO-214AA, SMB

BZD27C82P RTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±6.09%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 62V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1SMB5931HM4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 3000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 12 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

package: DO-214AA, SMB

BZD17C24P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5.83%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1SMA5946 M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 75V, 1500MW, 5%, D

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 140 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 56V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

package: DO-214AC, SMA

BZD17C27P RQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±7.03%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

package: DO-219AB

1M160ZHR1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 160V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 1100 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 121.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

BZT52B36-G RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 36V, 410MW, 2%, SO

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 25.2V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

package: SOD-123

BZT52C5V1S RRG

Taiwan Semiconductor Corporation

DIODE, ZENER, 5.1V, 200MW, 5%, S

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1.8µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

package: SC-90, SOD-323F

TS15P07GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

package: 4-SIP, TS-6P

TST40L60CW

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 40A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 630 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: -

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MUR360SH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

BZS55C24

Taiwan Semiconductor Corporation

1206 (CERAMICS), 500MW, 5%, SMAL

• Voltage - Zener (Nom) (Vz): 24 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 18 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206

package: -

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HS1GFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

BZX584B68-RSG

Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±2%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 240 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 52 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

package: -

PU3BAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: 47pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

RS3MH

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

1PGSMB5933

Taiwan Semiconductor Corporation

DIODE ZENER 22V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 22 V
• Tolerance: ±5%
• Power - Max: 3 W
• Impedance (Max) (Zzt): 17.5 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 16.7 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

package: -

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SS310H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

TS19371CX6

Taiwan Semiconductor Corporation

BOOST (STEP-UP) WLED DRIVER WITH

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 2.5V
• Voltage - Supply (Max): 18V
• Voltage - Output: -
• Current - Output / Channel: 650mA (Switch)
• Frequency: 1.2MHz
• Dimming: Analog, PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

package: -

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GBPC5004M

Taiwan Semiconductor Corporation

50A, 400V, STANDARD BRIDGE RECTI

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400 V
• Current - Average Rectified (Io): 50 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

package: -

TST30L120CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 120V 15A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 120 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

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ESH2D

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 200 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

BZD17C68P

Taiwan Semiconductor Corporation

SUB SMA, 800MW, 6%, ZENER DIODE

• Voltage - Zener (Nom) (Vz): 68 V
• Tolerance: ±5.88%
• Power - Max: 800 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 51 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: Sub SMA

package: -

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HS5B-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 5A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -

HS3KH

Taiwan Semiconductor Corporation

75NS, 3A, 800V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

package: -