Pagina 23 - Taiwan Semiconductor Corporation Producten | Heisener Electronics
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Taiwan Semiconductor Corporation Producten

Archief 4.299
Pagina  23/154
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Onderdeelnummer
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package
Voorraad
Aantal
BZD27C43PHRUG
Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±6.97%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 33V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad6.192
1SMB5942HR5G
Taiwan Semiconductor Corporation

DIODE, ZENER, 51V, 3000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 51V
  • Tolerance: ±5%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 70 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 38.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: DO-214AA, SMB
Voorraad3.200
BZD27C7V5PHM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 7.45V
  • Tolerance: ±6.04%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad3.520
BZD27C82PHMHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±6.09%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 62V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad5.216
1M150ZHA0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 150V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 150V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 1000 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 114V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad5.120
BZX85C3V3 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.3V, 1300MW, 5%,

  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±5%
  • Power - Max: 1.3W
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 40µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad2.288
BZS55C11 RXG
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 500MW, 5%, 12

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 8.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
package: 1206 (3216 Metric)
Voorraad3.616
BZT55C8V2 L1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 8.2V, 500MW, 5%, Q

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 6.2V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: Mini MELF
package: SOD-80 Variant
Voorraad3.248
BZD27C33P RVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 24V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad2.736
GBPC40005M T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 40A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC40-M
  • Supplier Device Package: GBPC40-M
package: 4-Square, GBPC40-M
Voorraad4.048
GBLA04HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 4A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
package: 4-SIP, GBL
Voorraad3.392
1N4756G
Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 35.8 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: -
Request a Quote
1N4735G
Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

  • Voltage - Zener (Nom) (Vz): 6.2 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 10 µA @ 3 V
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: -
Request a Quote
BZT52C10-G
Taiwan Semiconductor Corporation

SOD-123, 350MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 10 V
  • Tolerance: ±5%
  • Power - Max: 350 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 200 nA @ 7 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
package: -
Request a Quote
HS1JFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad20.844
1PGSMB5932-R5G
Taiwan Semiconductor Corporation

DIODE ZENER 20V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Request a Quote
RS2M
Taiwan Semiconductor Corporation

DIODE GEN PURP 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad17.124
1PGSMC5354-V7G
Taiwan Semiconductor Corporation

DIODE ZENER 5W DO214AB

  • Voltage - Zener (Nom) (Vz): 17 V
  • Tolerance: ±5%
  • Power - Max: 5 W
  • Impedance (Max) (Zzt): 3 Ohms
  • Current - Reverse Leakage @ Vr: 500 nA @ 12.9 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
package: -
Request a Quote
MBRF2050H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 20A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
LL5819-L0
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 1A MELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
  • Operating Temperature - Junction: -65°C ~ 125°C
package: -
Request a Quote
TSM22P10CZ-C0G
Taiwan Semiconductor Corporation

MOSFET P-CH 100V 22A TO220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Request a Quote
BZT55C8V2
Taiwan Semiconductor Corporation

QMMELF, 500MW, 5%, SMALL SIGNAL

  • Voltage - Zener (Nom) (Vz): 8.2 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: QMMELF
package: -
Request a Quote
MBRF2060
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 20A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
MTZJ2V0SB
Taiwan Semiconductor Corporation

DO-34, 500MW, 2%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 2.11 V
  • Tolerance: ±2%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 120 µA @ 500 mV
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
package: -
Request a Quote
KBPF205G-C0G
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 2A KBPF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPF
  • Supplier Device Package: KBPF
package: -
Request a Quote
TSM340N06CH
Taiwan Semiconductor Corporation

60V, 25A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251S (IPAK SL)
  • Package / Case: TO-251-3 Stub Leads, IPAK
package: -
Request a Quote
1SMB5926
Taiwan Semiconductor Corporation

DIODE ZENER 11V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 11 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 5.5 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 8.4 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Request a Quote
SR802H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Request a Quote