Pagina 153 - Taiwan Semiconductor Corporation Producten | Heisener Electronics
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Taiwan Semiconductor Corporation Producten

Archief 4.299
Pagina  153/154
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Onderdeelnummer
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package
Voorraad
Aantal
BZD17C220P RTG
Taiwan Semiconductor Corporation

DIODE, ZENER, 220V, 800MW, %, SU

  • Voltage - Zener (Nom) (Vz): 220V
  • Tolerance: ±5.68%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 900 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 160V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad2.336
BZD27C220PHRHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 220V, 1000MW, %, A

  • Voltage - Zener (Nom) (Vz): 220.5V
  • Tolerance: ±5.66%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 900 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 160V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad2.144
1N4758AHR1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 56V, 1000MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 56V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 110 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 42.6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad7.120
1M160Z B0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 160V, 1000MW, 5%,

  • Voltage - Zener (Nom) (Vz): 160V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 1100 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 121.6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
package: DO-204AL, DO-41, Axial
Voorraad5.184
1SMA4741 M2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 1000MW, %, DO

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±5%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 8.4V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: DO-214AC, SMA
Voorraad5.232
BZV55C68 L1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 500MW, 5%, MM

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 160 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 51V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
package: DO-213AC, MINI-MELF, SOD-80
Voorraad3.088
BZX79C5V6 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 500MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 5.6V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
package: DO-204AH, DO-35, Axial
Voorraad6.672
GBPC1506W T0G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
package: 4-Square, GBPC-W
Voorraad3.888
S1KL
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad43.011
MUR315S
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad9.000
ES2DFL
Taiwan Semiconductor Corporation

35NS, 2A, 200V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 22pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad30.000
1PGSMB5941
Taiwan Semiconductor Corporation

DIODE ZENER 47V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 67 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Request a Quote
TSM60NB260CI
Taiwan Semiconductor Corporation

600V, 13A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 32.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: -
Request a Quote
KTC3198-O-B0-A1G
Taiwan Semiconductor Corporation

TRANS NPN 50V 0.15A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 150mA, 6V
  • Power - Max: 500 mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92
package: -
Request a Quote
MURF8L60
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad2.991
UG5JH
Taiwan Semiconductor Corporation

20NS, 5A, 600V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad3.000
SFT13GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 1A TS-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
SFF1006G
Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
package: -
Voorraad2.958
ESH2C
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad18.000
ABS4H
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 400V 800MA ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 800 mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
package: -
Voorraad15.000
MBR2560CT-Y
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 25A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
package: -
Request a Quote
SK83C
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Voorraad8.880
RS2JFS
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A SOD128

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 11pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad37.320
S1GLSH
Taiwan Semiconductor Corporation

DIODE GP 400V 1.2A SOD123HE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
BZT52C11S-R9G
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 5%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 11 V
  • Tolerance: ±5%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 90 nA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
package: -
Voorraad30.000
SRS2060H
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 20A TO263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
package: -
Request a Quote
1PGSMB5940H
Taiwan Semiconductor Corporation

DIODE ZENER 43V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 43 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 53 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Request a Quote
BZS55C10-RAG
Taiwan Semiconductor Corporation

DIODE ZENER 10V 500MW 1206

  • Voltage - Zener (Nom) (Vz): 10 V
  • Tolerance: ±5%
  • Power - Max: 500 mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
package: -
Request a Quote