Pagina 125 - Taiwan Semiconductor Corporation Producten | Heisener Electronics
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Taiwan Semiconductor Corporation Producten

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BZD17C200P R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 800MW, %, SU

  • Voltage - Zener (Nom) (Vz): 200V
  • Tolerance: ±6%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 750 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 150V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad4.848
2M180Z R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 180V, 2000MW, %, D

  • Voltage - Zener (Nom) (Vz): 180V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 725 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 136.8V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
package: DO-204AC, DO-15, Axial
Voorraad5.024
BZD27C91P RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 91V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 90.5V
  • Tolerance: ±6.07%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 68V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
package: DO-219AB
Voorraad5.792
1SMA5928HR3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 13V, 1500MW, 5%, A

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 9.9V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
package: DO-214AC, SMA
Voorraad3.232
TSZU52C6V8 RGG
Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 150MW, 5%, 0

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Tolerance: ±5%
  • Power - Max: 150mW
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
package: 0201 (0603 Metric)
Voorraad2.288
BZX585B9V1 RSG
Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 200MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 450nA @ 6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
package: SC-79, SOD-523
Voorraad4.336
BZX585B3V6 RSG
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.6V, 200MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 3.6V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 4.5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
package: SC-79, SOD-523
Voorraad5.136
BZT55C68 L1G
Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 500MW, 5%, QM

  • Voltage - Zener (Nom) (Vz): 68V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 160 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 51V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: Mini MELF
package: SOD-80 Variant
Voorraad5.232
MTZJ3V9SA R0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 3.88V, 500MW, %, D

  • Voltage - Zener (Nom) (Vz): 3.88V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AG, DO-34, Axial
  • Supplier Device Package: DO-34
package: DO-204AG, DO-34, Axial
Voorraad6.288
BZT55B7V5 L0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 500MW, 2%, Q

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-80 Variant
  • Supplier Device Package: Mini MELF
package: SOD-80 Variant
Voorraad2.608
BZX79B30 A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 500MW, 2%, DO

  • Voltage - Zener (Nom) (Vz): 30V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 80 Ohms
  • Current - Reverse Leakage @ Vr: 21mA @ 50mV
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
package: DO-204AH, DO-35, Axial
Voorraad3.760
TS10P07GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
package: 4-SIP, TS-6P
Voorraad2.816
MBS4 RCG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 0.8A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
package: 4-BESOP (0.173", 4.40mm Width)
Voorraad7.952
TS2937CM50 RNG
Taiwan Semiconductor Corporation

IC REG LINEAR 5V 500MA

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.624
TS432ACT A3G
Taiwan Semiconductor Corporation

VOLTAGE REFERENCE, PROGRAMMABLE,

  • Reference Type: -
  • Output Type: -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Current - Output: -
  • Tolerance: -
  • Temperature Coefficient: -
  • Noise - 0.1Hz to 10Hz: -
  • Noise - 10Hz to 10kHz: -
  • Voltage - Input: -
  • Current - Supply: -
  • Current - Cathode: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad2.768
TSM500N15CS
Taiwan Semiconductor Corporation

150V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 12.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
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ES1DVH
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad45.000
ES2GFL
Taiwan Semiconductor Corporation

35NS, 2A, 400V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad29.880
BZT52B47S
Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

  • Voltage - Zener (Nom) (Vz): 47 V
  • Tolerance: ±2%
  • Power - Max: 200 mW
  • Impedance (Max) (Zzt): 170 Ohms
  • Current - Reverse Leakage @ Vr: 45 nA @ 33 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
package: -
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1PGSMB5942HR5G
Taiwan Semiconductor Corporation

DIODE ZENER 51V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 51 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 70 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
package: -
Voorraad6.399
MBR16150
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 16A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad3.000
TS2937CP33
Taiwan Semiconductor Corporation

0.5A 3.3V ULTRA LOW DROPOUT VOLT

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 26V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.7V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 25 mA
  • PSRR: -
  • Control Features: Current Limit
  • Protection Features: Over Current, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
package: -
Request a Quote
SF43GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Request a Quote
SF48GH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad7.500
SD103CM3-RRG
Taiwan Semiconductor Corporation

0.35A, 20V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 350mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 10 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
Voorraad9.000
HS2FH
Taiwan Semiconductor Corporation

50NS, 2A, 300V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 300 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
package: -
Voorraad18.000
TSM70N380CP
Taiwan Semiconductor Corporation

700V, 11A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
SRA2040
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 20A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 125°C
package: -
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