Rohm Semiconductor Producten

RSR025P03TL

Rohm Semiconductor

MOSFET P-CH 30V 2.5A TSMT3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

package: SC-96

DTB113EKT146

Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 1k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

package: TO-236-3, SC-59, SOT-23-3

IMH14AT108

Rohm Semiconductor

TRANS PREBIAS DUAL NPN SMT6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SMT6

package: SC-74, SOT-457

BD9140MUV-E2

Rohm Semiconductor

IC REG BUCK ADJ 2A SYNC VQFN020

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 13.2V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 6V
• Current - Output: 2A
• Frequency - Switching: 500kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: VQFN020V4040

package: 20-VFQFN Exposed Pad

BD9853AFV-E2

Rohm Semiconductor

IC REG CTRLR BUCK 16SSOP

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 2
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 16 V
• Frequency - Switching: 100kHz ~ 2MHz
• Duty Cycle (Max): -
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Frequency Control, Soft Start
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-SSOPB

package: 16-LSSOP (0.173", 4.40mm Width)

BU4217F-TR

Rohm Semiconductor

IC DETECTOR VOLT 1.7V ODRN 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 1.7V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

package: SC-82

BR25S320FV-WE2

Rohm Semiconductor

IC EEPROM 32KBIT 20MHZ 8SSOPB

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 32Kb (4K x 8)
• Memory Interface: SPI
• Clock Frequency: 20MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-SSOPB

package: 8-LSSOP (0.173", 4.40mm Width)

BU7262NUX-TR

Rohm Semiconductor

IC OPAMP GP 2MHZ RRO 8VSON

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 1.1 V/µs
• Gain Bandwidth Product: 2MHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 1mV
• Current - Supply: 550µA
• Current - Output / Channel: 12mA
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 5.5 V, ±0.9 V ~ 2.75 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

package: 8-UFDFN Exposed Pad

MNR35J5RJ301

Rohm Semiconductor

RES ARRAY 8 RES 300 OHM 2512

• Circuit Type: Bussed
• Resistance (Ohms): 300
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 2512 (6432 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.252" L x 0.122" W (6.40mm x 3.10mm)
• Height - Seated (Max): 0.026" (0.65mm)

package: 2512 (6432 Metric), Convex, Long Side Terminals

MNR15E0RPJ104

Rohm Semiconductor

RES ARRAY 8 RES 100K OHM 1206

• Circuit Type: Bussed
• Resistance (Ohms): 100k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 31mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

package: 1206 (3216 Metric), Convex, Long Side Terminals

MCR18EZPJ434

Rohm Semiconductor

RES SMD 430K OHM 5% 1/4W 1206

• Resistance: 430 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR18EZPJ362

Rohm Semiconductor

RES SMD 3.6K OHM 5% 1/4W 1206

• Resistance: 3.6 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR10EZPF9101

Rohm Semiconductor

RES SMD 9.1K OHM 1% 1/8W 0805

• Resistance: 9.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

MCR18EZHJ8R2

Rohm Semiconductor

RES SMD 8.2 OHM 5% 1/4W 1206

• Resistance: 8.2 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±500ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR18EZHF1804

Rohm Semiconductor

RES SMD 1.8M OHM 1% 1/4W 1206

• Resistance: 1.8 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR18EZHF1150

Rohm Semiconductor

RES SMD 115 OHM 1% 1/4W 1206

• Resistance: 115 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 1206 (3216 Metric)

MCR03EZPFX1050

Rohm Semiconductor

RES SMD 105 OHM 1% 1/10W 0603

• Resistance: 105 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

MCR01MZPJ154

Rohm Semiconductor

RES SMD 150K OHM 5% 1/16W 0402

• Resistance: 150 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0402 (1005 Metric)

ESR10EZPF93R1

Rohm Semiconductor

RES SMD 93.1 OHM 1% 0.4W 0805

• Resistance: 93.1 Ohms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

KTR10EZPJ245

Rohm Semiconductor

RES SMD 2.4M OHM 5% 1/8W 0805

• Resistance: 2.4 MOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0805 (2012 Metric)

TRR03EZPF6192

Rohm Semiconductor

RES SMD 61.9K OHM 1% 1/10W 0603

• Resistance: 61.9 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

package: 0603 (1608 Metric)

RFN5BM6SFHTL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Operating Temperature - Junction: 150°C (Max)

package: -

Request a Quote

R6020ANZFL1C8

Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: TO-3P-3 Full Pack

package: -

Request a Quote

RGT80TS65DGC13

Rohm Semiconductor

IGBT TRNCH FIELD 650V 70A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 70 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 234 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 79 nC
• Td (on/off) @ 25°C: 34ns/119ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 236 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

package: -

DTA114YCAHZGT116

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A SST3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250 MHz
• Power - Max: 350 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SST3

package: -

UMD12NFHATR

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• Frequency - Transition: -
• Power - Max: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

Request a Quote

DTA123EMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 0.1A VMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): -
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

package: -

RGTV80TS65GC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 78 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
• Power - Max: 234 W
• Switching Energy: 1.02mJ (on), 710µJ (off)
• Input Type: Standard
• Gate Charge: 81 nC
• Td (on/off) @ 25°C: 39ns/113ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

package: -