Pagina 43 - Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Single

Archief 1.247
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot RDN120N25
Rohm Semiconductor

MOSFET N-CH 250V 12A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad14.676
MOSFET (Metal Oxide)
250V
12A (Ta)
10V
4V @ 1mA
62nC @ 10V
1224pF @ 10V
±30V
-
40W (Tc)
210 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
hot RDN100N20
Rohm Semiconductor

MOSFET N-CH 200V 10A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad2.000
MOSFET (Metal Oxide)
200V
10A (Ta)
10V
4V @ 1mA
30nC @ 10V
543pF @ 10V
±30V
-
35W (Tc)
360 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
2SK2740
Rohm Semiconductor

MOSFET N-CH 600V 7A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad3.392
MOSFET (Metal Oxide)
600V
7A (Ta)
10V
4V @ 1mA
-
1050pF @ 10V
±30V
-
30W (Tc)
1.2 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
2SK2713
Rohm Semiconductor

MOSFET N-CH 450V 5A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad3.696
MOSFET (Metal Oxide)
450V
5A (Ta)
10V
4V @ 1mA
-
600pF @ 10V
±30V
-
30W (Tc)
1.4 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
2SK2299N
Rohm Semiconductor

MOSFET N-CH 450V 7A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad5.472
MOSFET (Metal Oxide)
450V
7A (Ta)
10V
4V @ 1mA
-
870pF @ 10V
±30V
-
30W (Tc)
1.1 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
hot 2SK2095N
Rohm Semiconductor

MOSFET N-CH 60V 10A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad9.072
MOSFET (Metal Oxide)
60V
10A (Ta)
4V, 10V
2.5V @ 1mA
-
1600pF @ 10V
±20V
-
30W (Tc)
95 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
hot RK7002T116
Rohm Semiconductor

MOSFET N-CH 60V 115MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad3.758.580
MOSFET (Metal Oxide)
60V
115mA (Ta)
5V, 10V
2.5V @ 1mA
-
50pF @ 25V
±20V
-
225mW (Ta)
7.5 Ohm @ 500mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
R6046ANZC8
Rohm Semiconductor

MOSFET N-CH 10V DRIVE TO-3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 81 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3PFM, SC-93-3
package: TO-3PFM, SC-93-3
Voorraad3.920
MOSFET (Metal Oxide)
600V
46A (Ta)
10V
4.5V @ 1mA
150nC @ 10V
6000pF @ 25V
±30V
-
120W (Tc)
81 mOhm @ 23A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3PFM, SC-93-3
hot R6020ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad2.000
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
4.5V @ 1mA
65nC @ 10V
2040pF @ 25V
±30V
-
100W (Tc)
250 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
hot R5016ANX
Rohm Semiconductor

MOSFET N-CH 500V 16A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad34.500
MOSFET (Metal Oxide)
500V
16A (Ta)
10V
4.5V @ 1mA
50nC @ 10V
1800pF @ 25V
±30V
-
50W (Tc)
270 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6018ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad7.856
MOSFET (Metal Oxide)
600V
18A (Ta)
10V
4.5V @ 1mA
55nC @ 10V
2050pF @ 25V
±30V
-
100W (Tc)
270 mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R5021ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 10.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad5.232
MOSFET (Metal Oxide)
500V
21A (Tc)
-
4.5V @ 1mA
64nC @ 10V
2300pF @ 25V
-
-
100W (Tc)
220 mOhm @ 10.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
hot RDN100N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 10A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 543pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad12.924
MOSFET (Metal Oxide)
200V
10A (Ta)
10V
4V @ 1mA
30nC @ 10V
543pF @ 10V
±30V
-
35W (Tc)
360 mOhm @ 5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
R6015ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad3.408
MOSFET (Metal Oxide)
600V
15A (Tc)
-
4.5V @ 1mA
50nC @ 10V
1700pF @ 25V
-
-
100W (Tc)
300 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R5016ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad3.936
MOSFET (Metal Oxide)
500V
16A (Ta)
10V
4.5V @ 1mA
50nC @ 10V
1800pF @ 25V
±30V
-
100W (Tc)
270 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R6012ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad3.616
MOSFET (Metal Oxide)
600V
12A (Ta)
10V
4.5V @ 1mA
35nC @ 10V
1300pF @ 25V
±30V
-
100W (Tc)
420 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
hot RCX330N25
Rohm Semiconductor

MOSFET N-CH 250V 33A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad78.384
MOSFET (Metal Oxide)
250V
33A (Ta)
10V
-
-
-
±30V
-
2.23W (Ta), 40W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5013ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad3.872
MOSFET (Metal Oxide)
500V
13A (Ta)
10V
4.5V @ 1mA
35nC @ 10V
1300pF @ 25V
±30V
-
100W (Tc)
380 mOhm @ 6.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
hot RMW280N03TB
Rohm Semiconductor

MOSFET N-CH 30V 28A 8PSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 28A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOP
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad6.208
MOSFET (Metal Oxide)
30V
28A (Ta)
4.5V, 10V
2.5V @ 1mA
53nC @ 10V
3130pF @ 15V
±20V
-
3W (Ta)
2.8 mOhm @ 28A, 10V
150°C (TJ)
Surface Mount
8-PSOP
8-SMD, Flat Lead
RDN150N20FU6
Rohm Semiconductor

MOSFET N-CH 200V 15A TO-220FN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FN
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad2.608
MOSFET (Metal Oxide)
200V
15A (Ta)
10V
4V @ 1mA
64nC @ 10V
1224pF @ 10V
±30V
-
40W (Tc)
160 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220FN
TO-220-3 Full Pack
R5009ANJTL
Rohm Semiconductor

MOSFET N-CH 500V 9A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad2.656
MOSFET (Metal Oxide)
500V
9A (Ta)
10V
4.5V @ 1mA
21nC @ 10V
650pF @ 25V
±30V
-
50W (Tc)
720 mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
R5011ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad2.368
MOSFET (Metal Oxide)
500V
11A (Ta)
10V
4.5V @ 1mA
30nC @ 10V
1000pF @ 25V
±30V
-
75W (Tc)
500 mOhm @ 5.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
hot ZDX130N50
Rohm Semiconductor

MOSFET N-CH 500V 13A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad15.120
MOSFET (Metal Oxide)
500V
13A (Tc)
10V
4.5V @ 1mA
40nC @ 10V
2180pF @ 25V
±30V
-
40W (Tc)
520 mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5007ANJTL
Rohm Semiconductor

MOSFET N-CH 10V DRIVE LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad3.296
MOSFET (Metal Oxide)
500V
7A (Ta)
10V
4.5V @ 1mA
13nC @ 10V
500pF @ 25V
±30V
-
40W (Tc)
1.05 Ohm @ 3.5A, 10V
150°C (TJ)
Surface Mount
LPTS
SC-83
RSY500N04FRATL
Rohm Semiconductor

MOSFET N-CH 40V 50A TCPT3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad5.712
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RP1E050RPTR
Rohm Semiconductor

MOSFET P-CH 30V 5A MPT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT6
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad2.384
MOSFET (Metal Oxide)
30V
5A (Ta)
4V, 10V
2.5V @ 1mA
9.2nC @ 5V
850pF @ 10V
±20V
-
2W (Ta)
50 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
MPT6
6-SMD, Flat Leads
RSS090P03FU6TB
Rohm Semiconductor

MOSFET P-CH 30V 9A 8SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad6.544
MOSFET (Metal Oxide)
30V
9A (Ta)
4V, 10V
2.5V @ 1mA
39nC @ 5V
4000pF @ 10V
20V
-
2W (Ta)
14 mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RCX120N20
Rohm Semiconductor

MOSFET N-CH 200V 12A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 325 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad2.080
MOSFET (Metal Oxide)
200V
12A (Tc)
10V
5.25V @ 1mA
15nC @ 10V
740pF @ 25V
±30V
-
2.23W (Ta), 40W (Tc)
325 mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack