Pagina 28 - Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Single | Heisener Electronics
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Rohm Semiconductor Producten - Transistors - FET's, MOSFET's - Single

Archief 1.247
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Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot R6020ANX
Rohm Semiconductor

MOSFET N-CH 600V 20A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad4.016
MOSFET (Metal Oxide)
600V
20A (Ta)
10V
4.5V @ 1mA
65nC @ 10V
2040pF @ 25V
±30V
-
50W (Tc)
220 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6015FNX
Rohm Semiconductor

MOSFET N-CH 600V 15A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad20.964
MOSFET (Metal Oxide)
600V
15A (Ta)
10V
5V @ 1mA
42nC @ 10V
1660pF @ 25V
±30V
-
50W (Tc)
350 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6025ANZC8
Rohm Semiconductor

MOSFET N-CH 600V 25A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
package: TO-3P-3 Full Pack
Voorraad6.832
MOSFET (Metal Oxide)
600V
25A (Tc)
10V
4.5V @ 1mA
88nC @ 10V
3250pF @ 10V
±20V
-
150W (Tc)
150 mOhm @ 12.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6035ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 35A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
package: TO-3P-3 Full Pack
Voorraad7.296
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
4V @ 1mA
110nC @ 10V
2720pF @ 25V
±20V
-
120W (Tc)
102 mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6030ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad8.964
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4V @ 1mA
85nC @ 10V
2100pF @ 25V
±20V
-
120W (Tc)
130 mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6030ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
package: TO-3P-3 Full Pack
Voorraad9.096
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4V @ 1mA
85nC @ 10V
2100pF @ 25V
±20V
-
120W (Tc)
130 mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
R6035ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 35A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 102 mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.572
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
4V @ 1mA
110nC @ 10V
2720pF @ 25V
±20V
-
120W (Tc)
102 mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6030ENX
Rohm Semiconductor

MOSFET N-CH 600V 30A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad9.156
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4V @ 1mA
85nC @ 10V
2100pF @ 25V
±30V
-
40W (Tc)
130 mOhm @ 14.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R5011FNX
Rohm Semiconductor

MOSFET N-CH 500V 11A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad8.832
MOSFET (Metal Oxide)
500V
11A (Ta), 5.4A (Tc)
10V
4V @ 1mA
30nC @ 10V
950pF @ 25V
±30V
-
50W (Tc)
520 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6020ENZ1C9
Rohm Semiconductor

MOSFET N-CH 600V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad10.812
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 1mA
60nC @ 10V
1400pF @ 25V
±20V
-
120W (Tc)
196 mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
R6020ENZC8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
package: TO-3P-3 Full Pack
Voorraad15.918
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 1mA
60nC @ 10V
1400pF @ 25V
±20V
-
120W (Tc)
196 mOhm @ 9.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RDX080N50FU6
Rohm Semiconductor

MOSFET N-CH 500V 8A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad20.784
MOSFET (Metal Oxide)
500V
8A (Ta)
10V
4V @ 1mA
28nC @ 10V
920pF @ 25V
±30V
-
40W (Tc)
850 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
R6010ANX
Rohm Semiconductor

MOSFET N-CH 600V 10A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad17.124
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
-
-
-
±30V
-
50W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R6008ANX
Rohm Semiconductor

MOSFET N-CH 600V 8A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad15.552
MOSFET (Metal Oxide)
600V
8A (Tc)
10V
4.5V @ 1mA
21nC @ 10V
680pF @ 25V
±30V
-
50W (Tc)
800 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot R6006ANX
Rohm Semiconductor

MOSFET N-CH 600V 6A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad9.036
MOSFET (Metal Oxide)
600V
6A (Tc)
10V
4.5V @ 1mA
15nC @ 10V
520pF @ 25V
±30V
-
40W (Tc)
1.2 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
RSJ800N06TL
Rohm Semiconductor

MOSFET N-CH 60V 80A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: SC-83
package: SC-83
Voorraad16.290
MOSFET (Metal Oxide)
60V
80A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
LPTS
SC-83
R6006ANDTL
Rohm Semiconductor

MOSFET N-CH 600V 6A CPT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad22.302
MOSFET (Metal Oxide)
600V
6A (Tc)
10V
4.5V @ 1mA
15nC @ 10V
460pF @ 25V
±30V
-
40W (Tc)
1.2 Ohm @ 3A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RSS090N03FU6TB
Rohm Semiconductor

MOSFET N-CH 30V 9A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad231.108
MOSFET (Metal Oxide)
30V
9A (Ta)
4V, 10V
2.5V @ 1mA
15nC @ 5V
810pF @ 10V
20V
-
2W (Ta)
15 mOhm @ 9A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RQ3E100MNTB1
Rohm Semiconductor

MOSFET N-CH 30V 10A HSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad29.994
MOSFET (Metal Oxide)
30V
10A (Ta)
4.5V, 10V
2.5V @ 1mA
9.9nC @ 10V
520pF @ 15V
±20V
-
2W (Ta)
12.3 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RQ3E130MNTB1
Rohm Semiconductor

MOSFET N-CH 30V 13A HSMT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.1 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSMT (3.2x3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad50.544
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
2.5V @ 1mA
14nC @ 10V
840pF @ 15V
±20V
-
2W (Ta)
8.1 mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
RS1E280GNTB
Rohm Semiconductor

MOSFET N-CH 30V 28A 8-HSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 28A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad19.836
MOSFET (Metal Oxide)
30V
28A (Ta)
4.5V, 10V
2.5V @ 1mA
36nC @ 10V
2300pF @ 15V
±20V
-
3W (Ta), 31W (Tc)
2.6 mOhm @ 28A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
hot RT1A050ZPTR
Rohm Semiconductor

MOSFET P-CH 12V 5A TSST8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSST
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad19.920
MOSFET (Metal Oxide)
12V
5A (Ta)
1.5V, 4.5V
1V @ 1mA
34nC @ 4.5V
2800pF @ 6V
±10V
-
600mW (Ta)
26 mOhm @ 5A, 4.5V
150°C (TJ)
Surface Mount
8-TSST
8-SMD, Flat Lead
hot TT8U1TR
Rohm Semiconductor

MOSFET P-CH 20V 2.4A TSST8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSST
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad6.048
MOSFET (Metal Oxide)
20V
2.4A (Ta)
1.5V, 4.5V
1V @ 1mA
6.7nC @ 4.5V
850pF @ 10V
±10V
Schottky Diode (Isolated)
1.25W (Ta)
105 mOhm @ 2.4A, 4.5V
150°C (TJ)
Surface Mount
8-TSST
8-SMD, Flat Lead
hot RZQ045P01TR
Rohm Semiconductor

MOSFET P-CH 12V 4.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 6V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad774.252
MOSFET (Metal Oxide)
12V
4.5A (Ta)
1.5V, 4.5V
1V @ 1mA
31nC @ 4.5V
2450pF @ 6V
±10V
-
1.25W (Ta)
35 mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
hot US6U37TR
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad36.000
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
±12V
Schottky Diode (Isolated)
1W (Ta)
240 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot RTL020P02TR
Rohm Semiconductor

MOSFET P-CH 20V 2A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad72.000
MOSFET (Metal Oxide)
20V
2A (Ta)
2.5V, 4.5V
2V @ 1mA
4.9nC @ 4.5V
430pF @ 10V
±12V
-
1W (Ta)
135 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
hot QS5U17TR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
package: SOT-23-5 Thin, TSOT-23-5
Voorraad80.736
MOSFET (Metal Oxide)
30V
2A (Ta)
2.5V, 4.5V
1.5V @ 1mA
3.9nC @ 4.5V
175pF @ 10V
±12V
Schottky Diode (Isolated)
900mW (Ta)
100 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
US5U3TR
Rohm Semiconductor

MOSFET N-CH 30V 1.5A TUMT5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): 12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT5
  • Package / Case: 6-SMD (5 Leads), Flat Lead
package: 6-SMD (5 Leads), Flat Lead
Voorraad51.426
MOSFET (Metal Oxide)
30V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
2.2nC @ 4.5V
80pF @ 10V
12V
Schottky Diode (Isolated)
1W (Ta)
240 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TUMT5
6-SMD (5 Leads), Flat Lead