Pagina 80 - ON Semiconductor Producten - Transistors - FET's, MOSFET's - Single

MCH6337-TL-E

ON Semiconductor

MOSFET P-CH 20V 4.5A MCPH6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-88FL/ MCPH6
Package / Case: 6-SMD, Flat Leads

package: 6-SMD, Flat Leads

Voorraad35.400

MOSFET (Metal Oxide)

20V

4.5A (Ta)

1.8V, 4.5V

1.3V @ 1mA

7.3nC @ 4.5V

670pF @ 10V

±10V

-

1.5W (Ta)

49 mOhm @ 3A, 4.5V

150°C (TJ)

Surface Mount

SC-88FL/ MCPH6

6-SMD, Flat Leads

SMP3003-DL-1EX

ON Semiconductor

MOSFET P-CH 75V 100A SMP-FD

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad6.880

-

CPH6341-M-TL-EX

ON Semiconductor

MOSFET P-CH 30V 5A CPH6

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad3.408

-

BMS3004-1EX

ON Semiconductor

MOSFET P-CH TO220-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad7.104

-

4V, 10V

-

±20V

-

ATP405-TL-HX

ON Semiconductor

MOSFET N-CH DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad2.992

-

10V

-

±20V

-

ATP101-TL-HX

ON Semiconductor

MOSFET P-CH DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad4.416

-

4.5V, 10V

-

±20V

-

2SK3816-DL-1EX

ON Semiconductor

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad7.472

-

4V, 10V

-

±20V

-

2SK3703-1EX

ON Semiconductor

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad5.600

-

4V, 10V

-

±20V

-

2SJ661-DL-1EX

ON Semiconductor

MOSFET P-CH D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad4.768

-

4V, 10V

-

±20V

-

BFL4001-1EX

ON Semiconductor

MOSFET N-CH 900V 6.5A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 3.25A, 10V
Operating Temperature: 150°C (TA)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

Voorraad2.256

MOSFET (Metal Oxide)

900V

6.5A (Ta)

10V

-

44nC @ 10V

850pF @ 30V

±30V

-

2W (Ta), 37W (Tc)

2.7 Ohm @ 3.25A, 10V

150°C (TA)

Through Hole

TO-220-3 Fullpack/TO-220F-3SG

TO-220-3 Full Pack

BBL4001

ON Semiconductor

MOSFET N-CH 60V 74A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 74A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 37A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG
Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

Voorraad2.656

MOSFET (Metal Oxide)

60V

74A (Ta)

4V, 10V

2.6V @ 1mA

135nC @ 10V

6900pF @ 20V

±20V

-

2W (Ta), 35W (Tc)

6.1 mOhm @ 37A, 10V

150°C (TJ)

Through Hole

TO-220-3 Fullpack/TO-220F-3SG

TO-220-3 Full Pack

2SK4125-1EX

ON Semiconductor

MOSFET N-CH 600V 17A TO3P

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V
Operating Temperature: 150°C (TA)
Mounting Type: Through Hole
Supplier Device Package: TO-3P-3L
Package / Case: TO-3P-3, SC-65-3

package: TO-3P-3, SC-65-3

Voorraad7.040

MOSFET (Metal Oxide)

600V

17A (Ta)

10V

-

46nC @ 10V

1200pF @ 30V

±30V

-

2.5W (Ta), 170W (Tc)

610 mOhm @ 7A, 10V

150°C (TA)

Through Hole

TO-3P-3L

TO-3P-3, SC-65-3

2SK4098FS

ON Semiconductor

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3FS
Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

Voorraad20.784

MOSFET (Metal Oxide)

600V

6A (Tc)

10V

-

23.5nC @ 10V

600pF @ 30V

±30V

-

2W

1.1 Ohm @ 3.5A, 10V

150°C

Through Hole

TO-220F-3FS

TO-220-3 Full Pack

2SJ665-DL-1EX

ON Semiconductor

MOSFET P-CH 100V 27A TO263

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voorraad3.008

MOSFET (Metal Oxide)

100V

27A (Ta)

4V, 10V

-

74nC @ 10V

4200pF @ 20V

±20V

-

65W (Tc)

77 mOhm @ 14A, 10V

150°C (TA)

Surface Mount

TO-263-2

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SFT1350-TL-H

ON Semiconductor

MOSFET P-CH 40V 19A TP-FA

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TP-FA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

Voorraad60.252

MOSFET (Metal Oxide)

40V

19A (Ta)

4.5V, 10V

-

12nC @ 10V

590pF @ 20V

±20V

-

1W (Ta), 23W (Tc)

59 mOhm @ 9.5A, 10V

150°C (TJ)

Surface Mount

TP-FA

TO-252-3, DPak (2 Leads + Tab), SC-63

NTLUS3A90PZCTBG

ON Semiconductor

MOSFET P-CH 20V 4A UDFN6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-PowerUFDFN

package: 6-PowerUFDFN

Voorraad2.368

MOSFET (Metal Oxide)

20V

2.6A (Ta)

1.5V, 4.5V

1V @ 250µA

12.3nC @ 4.5V

950pF @ 10V

±8V

-

600mW (Ta)

62 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-PowerUFDFN

NTLUS3A90PZCTAG

ON Semiconductor

MOSFET P-CH 20V 4A UDFN6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-PowerUFDFN

package: 6-PowerUFDFN

Voorraad4.752

MOSFET (Metal Oxide)

20V

2.6A (Ta)

1.5V, 4.5V

1V @ 250µA

12.3nC @ 4.5V

950pF @ 10V

±8V

-

600mW (Ta)

62 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-PowerUFDFN

NTLUS3A39PZCTBG

ON Semiconductor

MOSFET P-CH 20V 5.2A UDFN6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-PowerUFDFN

package: 6-PowerUFDFN

Voorraad3.792

MOSFET (Metal Oxide)

20V

3.4A (Ta)

1.5V, 4.5V

1V @ 250µA

10.4nC @ 4.5V

920pF @ 15V

±8V

-

600mW (Ta)

39 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-PowerUFDFN

NTLUS3A39PZCTAG

ON Semiconductor

MOSFET P-CH 20V 5.2A UDFN6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-PowerUFDFN

package: 6-PowerUFDFN

Voorraad7.664

MOSFET (Metal Oxide)

20V

3.4A (Ta)

1.5V, 4.5V

1V @ 250µA

10.4nC @ 4.5V

920pF @ 15V

±8V

-

600mW (Ta)

39 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-PowerUFDFN

NDT01N60T1G

ON Semiconductor

MOSFET N-CH 600V 0.4A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223 (TO-261)
Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

Voorraad13.020

MOSFET (Metal Oxide)

600V

400mA (Tc)

10V

3.7V @ 50µA

7.2nC @ 10V

160pF @ 25V

±30V

-

2.5W (Tc)

8.5 Ohm @ 200mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223 (TO-261)

TO-261-4, TO-261AA

3LP01S-TL-E

ON Semiconductor

MOSFET P-CH 30V 0.1A SMCP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SMCP
Package / Case: SC-75, SOT-416

package: SC-75, SOT-416

Voorraad2.025.612

MOSFET (Metal Oxide)

30V

100mA (Ta)

1.5V, 4V

-

1.43nC @ 10V

7.5pF @ 10V

±10V

-

150mW (Ta)

10.4 Ohm @ 50mA, 4V

150°C (TJ)

Surface Mount

SMCP

SC-75, SOT-416

2SK4196LS-1E

ON Semiconductor

MOSFET N-CH 500V 5.5A TO-220FI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3FS
Package / Case: TO-220-3

package: TO-220-3

Voorraad3.904

MOSFET (Metal Oxide)

500V

5A (Tc)

10V

-

14.6nC @ 10V

360pF @ 30V

±30V

-

2W (Ta), 30W (Tc)

1.56 Ohm @ 2.8A, 10V

150°C (TJ)

Through Hole

TO-220F-3FS

TO-220-3

NTMFS4C08NT1G-001

ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad3.504

MOSFET (Metal Oxide)

30V

9A (Ta), 52A (Tc)

4.5V, 10V

2.1V @ 250µA

18.2nC @ 10V

1670pF @ 15V

±20V

-

760mW (Ta)

5.8 mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C10NT1G-001

ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad3.456

MOSFET (Metal Oxide)

30V

8.2A (Ta), 46A (Tc)

4.5V, 10V

2.2V @ 250µA

18.6nC @ 10V

987pF @ 15V

±20V

-

750mW (Ta)

6.95 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C09NT1G-001

ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad3.472

MOSFET (Metal Oxide)

30V

9A (Ta), 52A (Tc)

4.5V, 10V

2.1V @ 250µA

22.2nC @ 10V

1252pF @ 15V

±20V

-

760mW (Ta)

5.8 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C06NT1G-001

ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad7.216

MOSFET (Metal Oxide)

30V

11A (Ta), 69A (Tc)

4.5V, 10V

2.1V @ 250µA

26nC @ 10V

1683pF @ 15V

±20V

-

770mW (Ta)

4 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C05NT1G-001

ON Semiconductor

MOSFET N-CH 30V 11.9A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

Voorraad5.824

MOSFET (Metal Oxide)

30V

11.9A (Ta), 78A (Tc)

4.5V, 10V

2.2V @ 250µA

14nC @ 4.5V

1972pF @ 15V

±20V

-

770mW (Ta)

3.4 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4962NFT1G

ON Semiconductor

MOSFET N-CH 30V SO8FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

package: -

Voorraad3.552

-

Onderdeelnummer	Fabrikant	Omschrijving	package	Voorraad	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MCH6337-TL-E	ON Semiconductor	MOSFET P-CH 20V 4.5A MCPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/ MCPH6 Package / Case: 6-SMD, Flat Leads	package: 6-SMD, Flat Leads	Voorraad35.400	MOSFET (Metal Oxide)	20V	4.5A (Ta)	1.8V, 4.5V	1.3V @ 1mA	7.3nC @ 4.5V	670pF @ 10V	±10V	-	1.5W (Ta)	49 mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	SC-88FL/ MCPH6	6-SMD, Flat Leads
SMP3003-DL-1EX	ON Semiconductor	MOSFET P-CH 75V 100A SMP-FD FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad6.880	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CPH6341-M-TL-EX	ON Semiconductor	MOSFET P-CH 30V 5A CPH6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad3.408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BMS3004-1EX	ON Semiconductor	MOSFET P-CH TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad7.104	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
ATP405-TL-HX	ON Semiconductor	MOSFET N-CH DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad2.992	-	-	-	10V	-	-	-	±20V	-	-	-	-	-	-	-
ATP101-TL-HX	ON Semiconductor	MOSFET P-CH DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad4.416	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
2SK3816-DL-1EX	ON Semiconductor	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad7.472	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
2SK3703-1EX	ON Semiconductor	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad5.600	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
2SJ661-DL-1EX	ON Semiconductor	MOSFET P-CH D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad4.768	-	-	-	4V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
BFL4001-1EX	ON Semiconductor	MOSFET N-CH 900V 6.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 3.25A, 10V Operating Temperature: 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	package: TO-220-3 Full Pack	Voorraad2.256	MOSFET (Metal Oxide)	900V	6.5A (Ta)	10V	-	44nC @ 10V	850pF @ 30V	±30V	-	2W (Ta), 37W (Tc)	2.7 Ohm @ 3.25A, 10V	150°C (TA)	Through Hole	TO-220-3 Fullpack/TO-220F-3SG	TO-220-3 Full Pack
BBL4001	ON Semiconductor	MOSFET N-CH 60V 74A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 74A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 37A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	package: TO-220-3 Full Pack	Voorraad2.656	MOSFET (Metal Oxide)	60V	74A (Ta)	4V, 10V	2.6V @ 1mA	135nC @ 10V	6900pF @ 20V	±20V	-	2W (Ta), 35W (Tc)	6.1 mOhm @ 37A, 10V	150°C (TJ)	Through Hole	TO-220-3 Fullpack/TO-220F-3SG	TO-220-3 Full Pack
2SK4125-1EX	ON Semiconductor	MOSFET N-CH 600V 17A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V Operating Temperature: 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-3P-3L Package / Case: TO-3P-3, SC-65-3	package: TO-3P-3, SC-65-3	Voorraad7.040	MOSFET (Metal Oxide)	600V	17A (Ta)	10V	-	46nC @ 10V	1200pF @ 30V	±30V	-	2.5W (Ta), 170W (Tc)	610 mOhm @ 7A, 10V	150°C (TA)	Through Hole	TO-3P-3L	TO-3P-3, SC-65-3
2SK4098FS	ON Semiconductor	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	package: TO-220-3 Full Pack	Voorraad20.784	MOSFET (Metal Oxide)	600V	6A (Tc)	10V	-	23.5nC @ 10V	600pF @ 30V	±30V	-	2W	1.1 Ohm @ 3.5A, 10V	150°C	Through Hole	TO-220F-3FS	TO-220-3 Full Pack
2SJ665-DL-1EX	ON Semiconductor	MOSFET P-CH 100V 27A TO263 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Voorraad3.008	MOSFET (Metal Oxide)	100V	27A (Ta)	4V, 10V	-	74nC @ 10V	4200pF @ 20V	±20V	-	65W (Tc)	77 mOhm @ 14A, 10V	150°C (TA)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFT1350-TL-H	ON Semiconductor	MOSFET P-CH 40V 19A TP-FA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 59 mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	package: TO-252-3, DPak (2 Leads + Tab), SC-63	Voorraad60.252	MOSFET (Metal Oxide)	40V	19A (Ta)	4.5V, 10V	-	12nC @ 10V	590pF @ 20V	±20V	-	1W (Ta), 23W (Tc)	59 mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
NTLUS3A90PZCTBG	ON Semiconductor	MOSFET P-CH 20V 4A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	package: 6-PowerUFDFN	Voorraad2.368	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.5V, 4.5V	1V @ 250µA	12.3nC @ 4.5V	950pF @ 10V	±8V	-	600mW (Ta)	62 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
NTLUS3A90PZCTAG	ON Semiconductor	MOSFET P-CH 20V 4A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	package: 6-PowerUFDFN	Voorraad4.752	MOSFET (Metal Oxide)	20V	2.6A (Ta)	1.5V, 4.5V	1V @ 250µA	12.3nC @ 4.5V	950pF @ 10V	±8V	-	600mW (Ta)	62 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
NTLUS3A39PZCTBG	ON Semiconductor	MOSFET P-CH 20V 5.2A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	package: 6-PowerUFDFN	Voorraad3.792	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.5V, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	±8V	-	600mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
NTLUS3A39PZCTAG	ON Semiconductor	MOSFET P-CH 20V 5.2A UDFN6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (1.6x1.6) Package / Case: 6-PowerUFDFN	package: 6-PowerUFDFN	Voorraad7.664	MOSFET (Metal Oxide)	20V	3.4A (Ta)	1.5V, 4.5V	1V @ 250µA	10.4nC @ 4.5V	920pF @ 15V	±8V	-	600mW (Ta)	39 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (1.6x1.6)	6-PowerUFDFN
NDT01N60T1G	ON Semiconductor	MOSFET N-CH 600V 0.4A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	package: TO-261-4, TO-261AA	Voorraad13.020	MOSFET (Metal Oxide)	600V	400mA (Tc)	10V	3.7V @ 50µA	7.2nC @ 10V	160pF @ 25V	±30V	-	2.5W (Tc)	8.5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
3LP01S-TL-E	ON Semiconductor	MOSFET P-CH 30V 0.1A SMCP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMCP Package / Case: SC-75, SOT-416	package: SC-75, SOT-416	Voorraad2.025.612	MOSFET (Metal Oxide)	30V	100mA (Ta)	1.5V, 4V	-	1.43nC @ 10V	7.5pF @ 10V	±10V	-	150mW (Ta)	10.4 Ohm @ 50mA, 4V	150°C (TJ)	Surface Mount	SMCP	SC-75, SOT-416
2SK4196LS-1E	ON Semiconductor	MOSFET N-CH 500V 5.5A TO-220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3	package: TO-220-3	Voorraad3.904	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	-	14.6nC @ 10V	360pF @ 30V	±30V	-	2W (Ta), 30W (Tc)	1.56 Ohm @ 2.8A, 10V	150°C (TJ)	Through Hole	TO-220F-3FS	TO-220-3
NTMFS4C08NT1G-001	ON Semiconductor	MOSFET N-CH 30V 9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad3.504	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2nC @ 10V	1670pF @ 15V	±20V	-	760mW (Ta)	5.8 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C10NT1G-001	ON Semiconductor	MOSFET N-CH 30V 8.2A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad3.456	MOSFET (Metal Oxide)	30V	8.2A (Ta), 46A (Tc)	4.5V, 10V	2.2V @ 250µA	18.6nC @ 10V	987pF @ 15V	±20V	-	750mW (Ta)	6.95 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C09NT1G-001	ON Semiconductor	MOSFET N-CH 30V 9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad3.472	MOSFET (Metal Oxide)	30V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	22.2nC @ 10V	1252pF @ 15V	±20V	-	760mW (Ta)	5.8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C06NT1G-001	ON Semiconductor	MOSFET N-CH 30V 11A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad7.216	MOSFET (Metal Oxide)	30V	11A (Ta), 69A (Tc)	4.5V, 10V	2.1V @ 250µA	26nC @ 10V	1683pF @ 15V	±20V	-	770mW (Ta)	4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4C05NT1G-001	ON Semiconductor	MOSFET N-CH 30V 11.9A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	package: 8-PowerTDFN	Voorraad5.824	MOSFET (Metal Oxide)	30V	11.9A (Ta), 78A (Tc)	4.5V, 10V	2.2V @ 250µA	14nC @ 4.5V	1972pF @ 15V	±20V	-	770mW (Ta)	3.4 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
NTMFS4962NFT1G	ON Semiconductor	MOSFET N-CH 30V SO8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	package: -	Voorraad3.552	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-