ON Semiconductor Producten - Transistors - FET's, MOSFET's - Arrays

NVMFD5873NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5483NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 6.4A 8DFN

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 6.4A
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5873NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NTMFD4901NFT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

• FET Type: 2 N-Channel (Dual), Schottky
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.3A, 17.9A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
• Power - Max: 1.1W, 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5852NLWFT1G

ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Power - Max: 3.2W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5852NLT1G

ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Power - Max: 3.2W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5485NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.3A
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5485NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.3A
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

EFC4C002NLTDG

ON Semiconductor

MOSFET 2N-CH 8WLCSP

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 2.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
• Power - Max: 2.6W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-XFBGA, WLCSP
• Supplier Device Package: 8-WLCSP (6x2.5)

package: 8-XFBGA, WLCSP

NVMFD5489NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVDD5894NLT4G

ON Semiconductor

MOSFET 2N-CH 40V 14A DPAK

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2103pF @ 25V
• Power - Max: 3.8W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak 5-Lead

package: TO-252-5, DPak (4 Leads + Tab), TO-252AD

NVMFD5853NWFT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 12A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5853NLWFT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 12A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5485NLWFT3G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.3A
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5489NLT1G

ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5853NT1G

ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 12A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 25V
• Power - Max: 3.1W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5485NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.3A
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMD3P03R2G

ON Semiconductor

MOSFET 2P-CH 30V 2.34A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.34A
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 24V
• Power - Max: 730mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

NVMFD5489NLWFT3G

ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NTMFD4902NFT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

• FET Type: 2 N-Channel (Dual), Schottky
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.3A, 13.3A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
• Power - Max: 1.1W, 1.16W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMFD5489NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 4.5A DFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Power - Max: 3W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NVMD6P02R2G

ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.8A
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
• Power - Max: 750mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

NTLLD4901NFTWG

ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
• Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
• Power - Max: 800mW, 810mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: 8-WDFN (3x3)

package: 8-PowerWDFN

EFC6617R-A-TF

ON Semiconductor

MOSFET N-CH DUAL 2.5V 6CSP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

EFC6611R-A-TF

ON Semiconductor

MOSFET 2N-CH 12V 27A EFCP

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-CSP (1.77x3.54)

package: 6-SMD, No Lead

EFC6612R-A-TF

ON Semiconductor

MOSFET 2N-CH 20V 23A EFCP

• FET Type: 2 N-Channel (Dual) Asymmetrical
• FET Feature: Logic Level Gate, 2.5V Drive
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 2.5W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Supplier Device Package: 6-CSP (1.77x3.54)

package: 6-SMD, No Lead

NVMFD5875NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7A
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Power - Max: 3.2W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

package: 8-PowerTDFN

NTLGD3502NT2G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
• Power - Max: 1.74W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (3x3)

package: 6-VDFN Exposed Pad