Microsemi Corporation Producten

APTM50DAM35TG

Microsemi Corporation

MOSFET N-CH 500V 99A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 99A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 781W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

package: SP4

JAN2N3442

Microsemi Corporation

TRANS NPN 140V 10A TO-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 10A
• Voltage - Collector Emitter Breakdown (Max): 140V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
• Power - Max: 6W
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3 (TO-204AA)

package: TO-204AA, TO-3

TAN75A

Microsemi Corporation

TRANS RF BIPO 290W 9A 55AZ1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Frequency - Transition: 960MHz ~ 1.215GHz
• Noise Figure (dB Typ @ f): -
• Gain: 8dB ~ 8.5dB
• Power - Max: 290W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
• Current - Collector (Ic) (Max): 9A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 55AZ
• Supplier Device Package: 55AZ

package: 55AZ

1N4699 (DO35)

Microsemi Corporation

DIODE ZENER 12V 500MW DO35

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

2EZ3.9D5/TR8

Microsemi Corporation

DIODE ZENER 3.9V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 30µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1EZ100D5E3/TR8

Microsemi Corporation

DIODE ZENER 100V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N5381AE3/TR12

Microsemi Corporation

DIODE ZENER 130V 5W T18

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 190 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 93.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

SMBJ5955B

Microsemi Corporation

DIODE ZENER 180V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

package: DO-214AA, SMB

JANTXV1N4623UR-1

Microsemi Corporation

DIODE ZENER 4.3V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

package: DO-213AA (Glass)

JAN1N970CUR-1

Microsemi Corporation

DIODE ZENER 24V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

package: DO-213AA (Glass)

1N709

Microsemi Corporation

DIODE ZENER 6.2V 250MW DO35

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±10%
• Power - Max: 250mW
• Impedance (Max) (Zzt): 4.1 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

1PMT5930B/TR13

Microsemi Corporation

DIODE ZENER 16V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

package: DO-216AA

3EZ17D2E3/TR8

Microsemi Corporation

DIODE ZENER 17V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

3EZ5.6D10/TR8

Microsemi Corporation

DIODE ZENER 5.6V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1PMT4133/TR7

Microsemi Corporation

DIODE ZENER 87V 1W DO216

• Voltage - Zener (Nom) (Vz): 87V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 66.12V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

package: DO-216AA

JANTX1N1186

Microsemi Corporation

DIODE GEN PURP 200V 35A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 175°C

package: DO-203AB, DO-5, Stud

APT60D30LCTG

Microsemi Corporation

DIODE ARRAY GP 300V 60A TO264

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 38ns
• Current - Reverse Leakage @ Vr: 250µA @ 300V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264 [L]

package: TO-264-3, TO-264AA

M2GL100-FC1152

Microsemi Corporation

IC FPGA 574 I/O 1152FCBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 99512
• Total RAM Bits: 3637248
• Number of I/O: 574
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 1152-BBGA, FCBGA
• Supplier Device Package: 1152-FCBGA (35x35)

package: 1152-BBGA, FCBGA

A3P250-QNG132

Microsemi Corporation

IC FPGA 87 I/O 132QFN

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 87
• Number of Gates: 250000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 132-WFQFN
• Supplier Device Package: 132-QFN (8x8)

package: 132-WFQFN

A42MX24-1PQ160

Microsemi Corporation

IC FPGA 125 I/O 160QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 125
• Number of Gates: 36000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 160-BQFP
• Supplier Device Package: 160-PQFP (28x28)

package: 160-BQFP

M2GL025T-FGG484I

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 27696
• Total RAM Bits: 1130496
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

package: 484-BGA

MXLPLAD30KP400AE3

Microsemi Corporation

TVS DIODE 400VWM 644VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 400V
• Voltage - Breakdown (Min): 444V
• Voltage - Clamping (Max) @ Ipp: 644V
• Current - Peak Pulse (10/1000µs): 46A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MAPLAD15KP70CAE3

Microsemi Corporation

TVS DIODE 70VWM 113VC SMD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 132A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

1N5659A

Microsemi Corporation

TVS DIODE 102VWM 165VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 102V
• Voltage - Breakdown (Min): 114V
• Voltage - Clamping (Max) @ Ipp: 165V
• Current - Peak Pulse (10/1000µs): 9.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

package: DO-13

MXLLCE13AE3

Microsemi Corporation

TVS DIODE 13VWM 21.5VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 70A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

package: DO-201AA, DO-27, Axial

MSMLG160AE3

Microsemi Corporation

TVS DIODE 160VWM 259VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 259V
• Current - Peak Pulse (10/1000µs): 11.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MSMBG8.5CAE3

Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14.4V
• Current - Peak Pulse (10/1000µs): 41.7A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

package: DO-215AA, SMB Gull Wing

JANTX1N5640A

Microsemi Corporation

TVS DIODE 17.1VWM 27.7VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 54A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

package: DO-13