Microsemi Corporation Producten

APT5518BFLLG

Microsemi Corporation

MOSFET N-CH 550V 31A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3286pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 403W (Tc)
• Rds On (Max) @ Id, Vgs: 180 mOhm @ 15.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

package: TO-247-3

MS1007

Microsemi Corporation

TRANS RF BIPO 233W 10A M174

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 55V
• Frequency - Transition: 30MHz
• Noise Figure (dB Typ @ f): -
• Gain: 14dB
• Power - Max: 233W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
• Current - Collector (Ic) (Max): 10A
• Operating Temperature: 200°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M174
• Supplier Device Package: M174

package: M174

JANTX1N2991B

Microsemi Corporation

DIODE ZENER 36V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 27.4V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA (DO-4)

package: DO-203AA, DO-4, Stud

1N5370B

Microsemi Corporation

DIODE ZENER 56V 5W T18

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 40.3V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

JAN1N751D-1

Microsemi Corporation

DIODE ZENER 5.1V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

JANTX1N758A-1

Microsemi Corporation

DIODE ZENER 10V 500MW DO35

• Voltage - Zener (Nom) (Vz): 10V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

package: DO-204AH, DO-35, Axial

1N5372C/TR8

Microsemi Corporation

DIODE ZENER 62V 5W T18

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 42 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 44.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

1N5354E3/TR8

Microsemi Corporation

DIODE ZENER 17V 5W T18

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±20%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

1PMT4103C/TR7

Microsemi Corporation

DIODE ZENER 9.1V 1W DO216

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 6.92V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

package: DO-216AA

1N5937CPE3/TR12

Microsemi Corporation

DIODE ZENER 33V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

3EZ100D2E3/TR12

Microsemi Corporation

DIODE ZENER 100V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 160 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N4749PE3/TR12

Microsemi Corporation

DIODE ZENER 24V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 18.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N6622US

Microsemi Corporation

DIODE GEN PURP 660V 1.2A A-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 660V
• Current - Average Rectified (Io): 1.2A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 500nA @ 660V
• Capacitance @ Vr, F: 10pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: A-MELF
• Operating Temperature - Junction: -65°C ~ 150°C

package: SQ-MELF, A

LX8384A-00CDD

Microsemi Corporation

IC REG LDO ADJ 5A TO263

• Applications: Converter, Intel Pentium? P54C-VRE
• Voltage - Input: 4.75 V ~ 10 V
• Number of Outputs: 1
• Voltage - Output: Adjustable
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: -

package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

JAN1N5314UR-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 4.7mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB (MELF, LL41)

package: DO-213AB, MELF

JAN1N5296-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 910µA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

package: DO-204AA, DO-7, Axial

M2S090TS-1FGG676T2

Microsemi Corporation

IC FPGA SOC

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

package: 676-BGA

AGL400V5-FG144I

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 9216
• Total RAM Bits: 55296
• Number of I/O: 97
• Number of Gates: 400000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

package: 144-LBGA

AX500-1FGG484

Microsemi Corporation

IC FPGA 317 I/O 484FBGA

• Number of LABs/CLBs: 8064
• Number of Logic Elements/Cells: -
• Total RAM Bits: 73728
• Number of I/O: 317
• Number of Gates: 500000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

package: 484-BGA

MXPLAD15KP14A

Microsemi Corporation

TVS DIODE 14VWM 23.2VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 645A
• Power - Peak Pulse: 15000W (15kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXPLAD6.5KP110AE3

Microsemi Corporation

TVS DIODE 110VWM 177VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 36.7A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXSMCG36AE3

Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 25.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MXSMCJ110CA

Microsemi Corporation

TVS DIODE 110VWM 177VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 8.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

MXLSMCG48CAE3

Microsemi Corporation

TVS DIODE 48VWM 77.4VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 48V
• Voltage - Breakdown (Min): 53.3V
• Voltage - Clamping (Max) @ Ipp: 77.4V
• Current - Peak Pulse (10/1000µs): 19.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MXL1.5KE200CAE3

Microsemi Corporation

TVS DIODE 171VWM 274VC CASE1

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

package: DO-201AA, DO-27, Axial

SMCJ6052E3/TR13

Microsemi Corporation

TVS DIODE 29VWM 52VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 29V
• Voltage - Breakdown (Min): 32.4V
• Voltage - Clamping (Max) @ Ipp: 52V
• Current - Peak Pulse (10/1000µs): 29A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

1N5930AG

Microsemi Corporation

DIODE ZENER 16V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 16 V
• Tolerance: ±10%
• Power - Max: 1.25 W
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: -

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APT6017B2LLG

Microsemi Corporation

MOSFET N-CH 600V 35A T-MAX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: T-MAX™ [B2]
• Package / Case: TO-247-3 Variant

package: -

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