Microsemi Corporation Producten

APT40SM120S

Microsemi Corporation

MOSFET N-CH 1200V 41A D3PAK

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 273W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D3Pak
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SMBJ5955CE3/TR13

Microsemi Corporation

DIODE ZENER 180V 2W SMBJ

• Voltage - Zener (Nom) (Vz): 180V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 900 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 136.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

package: DO-214AA, SMB

SMAJ5915AE3/TR13

Microsemi Corporation

DIODE ZENER 3.9V 3W DO214AC

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±10%
• Power - Max: 3W
• Impedance (Max) (Zzt): 7.5 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

package: DO-214AC, SMA

SMAJ4467E3/TR13

Microsemi Corporation

DIODE ZENER 12V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 200nA @ 9.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

package: DO-214AC, SMA

JANTXV1N5532BUR-1

Microsemi Corporation

DIODE ZENER 12V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 10.8V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

package: DO-213AA (Glass)

JAN1N4133CUR-1

Microsemi Corporation

DIODE ZENER 87V DO213AA

• Voltage - Zener (Nom) (Vz): 87V
• Tolerance: ±2%
• Power - Max: -
• Impedance (Max) (Zzt): 1000 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 66.2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

package: DO-213AA

JAN1N4979US

Microsemi Corporation

DIODE ZENER 75V 5W D5B

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: E-MELF
• Supplier Device Package: D-5B

package: E-MELF

1N5360AE3/TR8

Microsemi Corporation

DIODE ZENER 25V 5W T18

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

2EZ43D2E3/TR12

Microsemi Corporation

DIODE ZENER 43V 2W DO204AL

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±2%
• Power - Max: 2W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

1N4736CE3/TR13

Microsemi Corporation

DIODE ZENER 6.8V 1W DO204AL

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

SMAJ5921BE3/TR13

Microsemi Corporation

DIODE ZENER 6.8V 1.56W DO214AC

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±5%
• Power - Max: 1.56W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 5.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMAJ)

package: DO-214AC, SMA

UPS5100H/TR13

Microsemi Corporation

DIODE SCHOTTKY 5A 100V POWERMITE

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

package: -

UPS120E/TR7

Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Capacitance @ Vr, F: 80pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -55°C ~ 125°C

package: DO-216AA

APT2X30DQ120J

Microsemi Corporation

DIODE MODULE 1.2KV 30A ISOTOP

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 3.1V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

package: SOT-227-4, miniBLOC

APT2X101DQ100J

Microsemi Corporation

DIODE MODULE 1KV 100A ISOTOP

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 290ns
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: ISOTOP?

package: SOT-227-4, miniBLOC

A1240A-PQG144M

Microsemi Corporation

IC FPGA 104 I/O 144QFP

• Number of LABs/CLBs: 684
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 104
• Number of Gates: 4000
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 144-BQFP
• Supplier Device Package: 144-PQFP (28x28)

package: 144-BQFP

M2GL010T-1FGG484I

Microsemi Corporation

IC FPGA 233 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 12084
• Total RAM Bits: 933888
• Number of I/O: 233
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

package: 484-BGA

MXLSMCGLCE170AE3

Microsemi Corporation

TVS DIODE 170VWM 275VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 5.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MXLPLAD30KP22A

Microsemi Corporation

TVS DIODE 22VWM 36.4VC PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 36.4V
• Current - Peak Pulse (10/1000µs): 822A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXLCE22A

Microsemi Corporation

TVS DIODE 22VWM 35.5VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 42A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

package: DO-201AA, DO-27, Axial

1N6116AUS

Microsemi Corporation

TVS DIODE 20.6VWM 37.4VC SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 20.6V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.4V
• Current - Peak Pulse (10/1000µs): 13.4A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

package: SQ-MELF, B

1N6110US

Microsemi Corporation

TVS DIODE 11.4VWM SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11.4V
• Voltage - Breakdown (Min): 13.54V
• Voltage - Clamping (Max) @ Ipp: 22.05V
• Current - Peak Pulse (10/1000µs): 22.61A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

package: SQ-MELF, B

MXLP5KE58CAE3

Microsemi Corporation

TVS DIODE 58VWM 93.6VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 58V
• Voltage - Breakdown (Min): 64.4V
• Voltage - Clamping (Max) @ Ipp: 93.6V
• Current - Peak Pulse (10/1000µs): 5.3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

MASMLJ100CAE3

Microsemi Corporation

TVS DIODE 100VWM 162VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 100V
• Voltage - Breakdown (Min): 111V
• Voltage - Clamping (Max) @ Ipp: 162V
• Current - Peak Pulse (10/1000µs): 18.6A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB

package: DO-214AB, SMC

MSMLG54AE3

Microsemi Corporation

TVS DIODE 54VWM 87.1VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 87.1V
• Current - Peak Pulse (10/1000µs): 34.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

package: DO-215AB, SMC Gull Wing

SMCJ5639A/TR13

Microsemi Corporation

TVS DIODE 15.3VWM 25.2VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.3V
• Voltage - Breakdown (Min): 17.1V
• Voltage - Clamping (Max) @ Ipp: 25.2V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

PM5338-FGI

Microsemi Corporation

SINGLE CHIP ADD/DROP MULTIPLEXER

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

2N5099

Microsemi Corporation

TRANS NPN 800V 1A TO5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 800 V
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: 4 W
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5AA

package: -

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