Microsemi Corporation Producten

APTGT75A1202G

Microsemi Corporation

MOD IGBT 1200V 110A SP2

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 110A
• Power - Max: 357W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector Cutoff (Max): 50µA
• Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP2
• Supplier Device Package: SP2

package: SP2

JANTXV2N7224

Microsemi Corporation

MOSFET N-CH 100V 34A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-254AA
• Package / Case: TO-254-3, TO-254AA (Straight Leads)

package: TO-254-3, TO-254AA (Straight Leads)

JANS2N3439UA

Microsemi Corporation

TRANS NPN 350V 1A UA

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 350V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Current - Collector Cutoff (Max): 2µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 800mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UA

package: 4-SMD, No Lead

JANTXV1N4991

Microsemi Corporation

DIODE ZENER 240V 5W D5B

• Voltage - Zener (Nom) (Vz): 240V
• Tolerance: ±5%
• Power - Max: 5W
• Impedance (Max) (Zzt): 650 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: E, Axial
• Supplier Device Package: E, Axial

package: E, Axial

JANTXV1N4614 (DO35)

Microsemi Corporation

DIODE ZENER 1.8V 500MW DO35

• Voltage - Zener (Nom) (Vz): 1.8V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 7.5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

package: DO-204AH, DO-35, Axial

1N5382C/TR12

Microsemi Corporation

DIODE ZENER 140V 5W T18

• Voltage - Zener (Nom) (Vz): 140V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 230 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 101V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

package: T-18, Axial

JANTXV1N3030DUR-1

Microsemi Corporation

DIODE ZENER 27V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB (MELF, LL41)

package: DO-213AB, MELF (Glass)

JAN1N4985CUS

Microsemi Corporation

DIODE ZENER 130V 5W D5B

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 190 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

package: SQ-MELF, E

JAN1N747AUR-1

Microsemi Corporation

DIODE ZENER 3.6V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 24 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

package: DO-213AA (Glass)

1N825UR-1

Microsemi Corporation

DIODE ZENER 6.55V 500MW DO213AA

• Voltage - Zener (Nom) (Vz): 6.55V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

package: DO-213AA (Glass)

CDLL5916B

Microsemi Corporation

DIODE ZENER 4.3V 1.25W DO213AB

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

package: DO-213AB, MELF

1N5948P/TR12

Microsemi Corporation

DIODE ZENER 91V 1.5W DO204AL

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: ±20%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 69.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

package: DO-204AL, DO-41, Axial

JANTXV1N6661US

Microsemi Corporation

DIODE GEN PURP 225V 500MA D5A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 225V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50nA @ 225V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, A
• Supplier Device Package: D-5A
• Operating Temperature - Junction: -65°C ~ 175°C

package: SQ-MELF, A

JANTX1N5420

Microsemi Corporation

DIODE GEN PURP 600V 3A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: B, Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

package: B, Axial

M2S090T-1FCSG325

Microsemi Corporation

IC FPGA SOC 90K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

package: 325-TFBGA

M2S060-FG676

Microsemi Corporation

IC FPGA SOC 60K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 256KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 60K Logic Modules
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

package: 676-BGA

A42MX36-BG272M

Microsemi Corporation

IC FPGA 202 I/O 272BGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 2560
• Number of I/O: 202
• Number of Gates: 54000
• Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TC)
• Package / Case: 272-BBGA
• Supplier Device Package: 272-PBGA (27x27)

package: 272-BBGA

AGL1000V2-FGG256I

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 24576
• Total RAM Bits: 147456
• Number of I/O: 177
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

package: 256-LBGA

M1A3P1000-FG144

Microsemi Corporation

IC FPGA 97 I/O 144FPGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 97
• Number of Gates: 1000000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

package: 144-LBGA

AGLP030V2-CS201I

Microsemi Corporation

IC FPGA 120 I/O 201CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 792
• Total RAM Bits: -
• Number of I/O: 120
• Number of Gates: 30000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 201-VFBGA, CSBGA
• Supplier Device Package: 201-CSP (8x8)

package: 201-VFBGA, CSBGA

AGLP030V5-CS201I

Microsemi Corporation

IC FPGA 120 I/O 201CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 792
• Total RAM Bits: -
• Number of I/O: 120
• Number of Gates: 30000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 201-VFBGA, CSBGA
• Supplier Device Package: 201-CSP (8x8)

package: 201-VFBGA, CSBGA

MAX24705EXG+

Microsemi Corporation

IC CLK SYNTHESIZER 5OUT 81CSBGA

• PLL: Yes
• Main Purpose: Ethernet, SONET/SDH
• Input: CMOS, TTL, Crystal
• Output: CML, CMOS, TTL
• Number of Circuits: 1
• Ratio - Input:Output: 3:5
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 750MHz
• Voltage - Supply: 1.8 V ~ 3.3 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 81-CSBGA (10x10)

package: -

1N6167AUS

Microsemi Corporation

TVS DIODE 86.6VWM SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 86.6V
• Voltage - Breakdown (Min): 104.5V
• Voltage - Clamping (Max) @ Ipp: 151.3V
• Current - Peak Pulse (10/1000µs): 9.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, C
• Supplier Device Package: C, SQ-MELF

package: SQ-MELF, C

JANTX1N6117US

Microsemi Corporation

TVS DIODE 22.8VWM BSQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22.8V
• Voltage - Breakdown (Min): 27.08V
• Voltage - Clamping (Max) @ Ipp: 43.68V
• Current - Peak Pulse (10/1000µs): 11.4A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

package: SQ-MELF, B

MAPLAD36KP60AE3

Microsemi Corporation

TVS DIODE 96.8VC 372A PLAD

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 372A
• Power - Peak Pulse: 36000W (36kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

package: Nonstandard SMD

MXLSMCG7.5AE3

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 116.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

package: DO-215AB, SMC Gull Wing

MXLSMCJ12A

Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 19.9V
• Current - Peak Pulse (10/1000µs): 75.3A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

package: DO-214AB, SMC

MASMLG170CA

Microsemi Corporation

TVS DIODE 170VWM 275VC DO215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 170V
• Voltage - Breakdown (Min): 189V
• Voltage - Clamping (Max) @ Ipp: 275V
• Current - Peak Pulse (10/1000µs): 11A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMLG (DO-215AB)

package: DO-215AB, SMC Gull Wing