Infineon Technologies Producten

IGW75N65H5XKSA1

Infineon Technologies

IGBT 650V TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 395W
• Switching Energy: 2.25mJ (on), 950µJ (off)
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: 28ns/174ns
• Test Condition: 400V, 75A, 8 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

package: TO-247-3

IRG5U100HF12A

Infineon Technologies

MOD IGBT 1200V 100A POWIR 34

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Power - Max: 620W
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 34 Module
• Supplier Device Package: POWIR? 34

package: POWIR? 34 Module

SPP100N04S2-04

Infineon Technologies

MOSFET N-CH 40V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 172nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

package: TO-220-3

IRLR3715ZTRLPBF

Infineon Technologies

MOSFET N-CH 20V 49A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.55V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

SPW20N60S5FKSA1

Infineon Technologies

MOSFET N-CH 600V 20A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

package: TO-247-3

IRFU2407

Infineon Technologies

MOSFET N-CH 75V 42A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

package: TO-251-3 Short Leads, IPak, TO-251AA

IPP084N06L3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 50A TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 34µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

package: TO-220-3

IPP034N03LGXKSA1

Infineon Technologies

MOSFET N-CH 30V 80A TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

package: TO-220-3

IRLL024NTRPBF

Infineon Technologies

MOSFET N-CH 55V 3.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

PTFA212001F1V4XWSA1

Infineon Technologies

IC RF POWER TRANSISTOR

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 15.8dB
• Voltage - Test: 30V
• Current Rating: -
• Noise Figure: -
• Current - Test: 1.6A
• Power - Output: 50W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

package: 2-Flatpack, Fin Leads, Flanged

TLE73682EXUMA1

Infineon Technologies

IC PS SYSTEM MULTI VOLT PGDSO-36

• Applications: Power Supply, Automotive Applications
• Voltage - Input: 4.5 V ~ 45 V
• Number of Outputs: 3
• Voltage - Output: 5V, 3.3V/2.6V, 1.2V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

package: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

TLE4284DV15NTMA1

Infineon Technologies

IC REG LINEAR 1.5V 1A TO252-3-11

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 1.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.6mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3-11

package: TO-252-3, DPak (2 Leads + Tab), SC-63

TLE42364GHTMA1

Infineon Technologies

IC REG LINEAR 5V 100MA SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 400µA ~ 15mA
• PSRR: 54dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

package: TO-261-4, TO-261AA

TLE75602EMDXUMA1

Infineon Technologies

MC RELAY + LED

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 3 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 330mA
• Rds On (Typ): 1 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-24-9

package: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad

TLE7240SLXUMA1

Infineon Technologies

IC DRIVER SPI 8CH LS 24SSOP

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 8
• Ratio - Input:Output: 1:2
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 41V (Max)
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 210mA
• Rds On (Typ): 1.5 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: -

package: 24-SSOP (0.154", 3.90mm Width)

IRS21867STRPBF

Infineon Technologies

IC MOSFET DRIVER

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 22ns, 18ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

TC264DA40F200NBCKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 144TQFP

• Core Processor: TriCore?
• Core Size: 32-Bit Dual-Core
• Speed: 200MHz
• Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, WDT
• Number of I/O: 88
• Program Memory Size: 2.5MB (2.5M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 96K x 8
• RAM Size: 752K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: A/D 40x12b, 4 x Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

XMC1302Q024X0064ABXUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 24VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 13x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 24-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-24-19

package: 24-VFQFN Exposed Pad

PVR1300

Infineon Technologies

IC RELAY 100VAC/DC 400MA 16-DIP

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 5 Ohm
• Load Current: 400mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
• Supplier Device Package: 16-DIP
• Relay Type: Relay

package: 16-DIP (0.300", 7.62mm), 10 Leads

BTS716GNT

Infineon Technologies

SWITCH 4-CHAN HIGH SIDE P-DSO20

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

BSC076N04NDATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id: 4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 20V
• Power - Max: 2.3W (Ta), 65W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

package: -

IPTC015N10NM5ATMA1

Infineon Technologies

MOSFET N-CH 100V 35A/354A HDSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 354A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 275µA
• Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-16-2
• Package / Case: 16-PowerSOP Module

package: -

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CY7C65211A24LQXSXQLA1

Infineon Technologies

USB-DATA

• Protocol: USB
• Function: Bridge, USB to I2C
• Interface: UART
• Standards: USB 2.0
• Voltage - Supply: 1.71V ~ 5.5V
• Current - Supply: 20mA
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: -
• Supplier Device Package: -

package: -

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FD1200R12IE4B1S1BDMA1

Infineon Technologies

FD1200R12IE4B1S1BD - IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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BSM25GP120BOSA1

Infineon Technologies

IGBT MOD 1200V 45A 230W

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 45 A
• Power - Max: 230 W
• Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 25A
• Current - Collector Cutoff (Max): 20 A
• Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

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CY9AF114LAPMC-GNE2

Infineon Technologies

IC MCU 32BIT 256KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 9x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (12x12)

package: -

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TLE7183QUXUMA6

Infineon Technologies

DRIVER_IC

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Controller - Commutation, Direction Management
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: 5.5V ~ 20V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP Exposed Pad
• Supplier Device Package: PG-TQFP-48-8

package: -

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TLE9140EQWXUMA1

Infineon Technologies

BLDC_DRIVER_IC

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (3)
• Interface: SPI
• Technology: Power MOSFET
• Step Resolution: -
• Applications: -
• Current - Output: -
• Voltage - Supply: 8V ~ 75V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TSDSO-32-1

package: -

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