Infineon Technologies Producten

IKW30N65NL5XKSA1

Infineon Technologies

IGBT 650V 30A UFAST DIO TO247-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 30A
• Power - Max: 227W
• Switching Energy: 560µJ (on), 1.35mJ (off)
• Input Type: Standard
• Gate Charge: 168nC
• Td (on/off) @ 25°C: 59ns/283ns
• Test Condition: 400V, 30A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 59ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

package: TO-247-3

IPI120N06S4H1AKSA1

Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFP064VPBF

Infineon Technologies

MOSFET N-CH 60V 130A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6760pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

package: TO-247-3

IPP120N06S4H1AKSA2

Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 21900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

package: TO-220-3

IPB80N06S4L07ATMA2

Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF200B211

Infineon Technologies

MOSFET N-CH 200V 12A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

BCR 162 B6327

Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

package: TO-236-3, SC-59, SOT-23-3

BCM846SE6327HTSA1

Infineon Technologies

TRANS 2NPN 65V 0.1A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 65V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

package: 6-VSSOP, SC-88, SOT-363

BCR148SH6433XTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

package: 6-VSSOP, SC-88, SOT-363

BBY5805WH6327XTSA1

Infineon Technologies

DIODE TUNING 10V 20MA SOT323

• Capacitance @ Vr, F: 5.5pF @ 6V, 1MHz
• Capacitance Ratio: 3.5
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 10V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

package: SC-70, SOT-323

BA592E6433HTMA1

Infineon Technologies

DIODE RF SW 35V 100MA SOD-323

• Diode Type: Standard - Single
• Voltage - Peak Reverse (Max): 35V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
• Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2

package: SC-76, SOD-323

IDW12G65C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 650V 12A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 12A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 190µA @ 650V
• Capacitance @ Vr, F: 360pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-247-3

IRS27952STRPBF

Infineon Technologies

IC REG CTRLR BUCK/HALF-BRG 8SOIC

• Output Type: Transistor Driver
• Function: Step-Down, Step-Up/Step-Down
• Output Configuration: Positive, Isolation Capable
• Topology: Buck, Half-Bridge
• Number of Outputs: 2
• Output Phases: 2
• Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
• Frequency - Switching: Up to 500Hz
• Duty Cycle (Max): 50%
• Synchronous Rectifier: Yes
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Enable, Frequency Control
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

PSB 2132 H V2.2

Infineon Technologies

IC CODEC FILTER 2CHAN MQFP-64

• Function: CODEC Filter
• Interface: IOM-2 PCM, SPI
• Number of Circuits: 2
• Voltage - Supply: 5V
• Current - Supply: 18mA
• Power (Watts): 90mW
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

package: 64-QFP

IPC60R380E6X7SA1

Infineon Technologies

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

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BSS119NH7796

Infineon Technologies

SMALL SIGNAL N-CHANNEL MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3-5
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: -

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CY9BF568MPMC-G-MNE2

Infineon Technologies

IC MCU 32B 1.03125MB FLSH 80LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit Single-Core
• Speed: 160MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 63
• Program Memory Size: 1.03125MB (1.03125M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 80-LQFP
• Supplier Device Package: 80-LQFP (12x12)

package: -

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CYAT81685-128AA88Z

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

package: -

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CYT3DLBBEBQ1BZSGS

Infineon Technologies

IC MCU 32BIT 4.063MB FLSH 272BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
• Core Size: 32-Bit Dual-Core
• Speed: 240MHz
• Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
• Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
• Number of I/O: 135
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 384K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-BGA
• Supplier Device Package: 272-BGA

package: -

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IPP65R420CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 8.7A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

package: -

SIDC06D60F6X1SA2

Infineon Technologies

DIODE GEN PURP 600V 15A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

package: -

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ISC022N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 147µA
• Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 254W (Tc)
• Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSON-8-3
• Package / Case: 8-PowerTDFN

package: -

IFF150B12U1E4BOMA1

Infineon Technologies

INTELLIGENT POWER MODULE (IPM)

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

package: -

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FF1400R12IP4BOSA1

Infineon Technologies

IGBT MODULE 1200V 1400A

• IGBT Type: Trench Field Stop
• Configuration: 2 Independent
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 1400 A
• Power - Max: 765000 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

520966231206

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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IRF40H233ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
• Power - Max: 3.8W (Ta), 50W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-4

package: -

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S6BP501A00SN2B000

Infineon Technologies

ANALOG

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

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