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Infineon Technologies |
IGBT 600V 31A 208W D2PAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 31A
- Current - Collector Pulsed (Icm): 62A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 208W
- Switching Energy: 220µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 56nC
- Td (on/off) @ 25°C: 34ns/184ns
- Test Condition: 400V, 15A, 22 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad3.888 |
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Infineon Technologies |
MOSFET N-CH 34V 49A 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 34V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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package: 8-PowerTDFN |
Voorraad2.352 |
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Infineon Technologies |
MOSFET P-CH 20V 8.2A MICRO8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8?
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Voorraad4.896 |
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Infineon Technologies |
MOSFET N-CH 650V 24.3A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 24.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad6.464 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad2.576 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad24.012 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad5.536 |
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Infineon Technologies |
MOSFET P-CH TO263-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad5.984 |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad5.280 |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO251-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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package: TO-251-3 Stub Leads, IPak |
Voorraad4.256 |
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Infineon Technologies |
MOSFET N-CH 75V 89A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6504pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 53A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET? Isometric ME
- Package / Case: DirectFET? Isometric ME
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package: DirectFET? Isometric ME |
Voorraad5.264 |
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Infineon Technologies |
MOSFET N-CH 100V 31A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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package: TO-251-3 Short Leads, IPak, TO-251AA |
Voorraad4.736 |
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Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 110W (Tc)
- Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad9.504 |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2FP
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: PG-TO220-2 Full Pack
- Operating Temperature - Junction: -55°C ~ 175°C
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package: TO-220-2 Full Pack |
Voorraad6.640 |
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Infineon Technologies |
IC REG CTRLR DL BUCK PWM 40QFN
- Applications: Controller, DDR, Intel VR12, AMD SVI
- Voltage - Input: 2.805 V ~ 3.63 V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: 0°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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package: 40-VFQFN Exposed Pad |
Voorraad69.600 |
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Infineon Technologies |
IC XPHASE3 CONTROLLER 32-MLPQ
- Applications: Processor
- Current - Supply: 6.5mA
- Voltage - Supply: 4.75 V ~ 7.5 V
- Operating Temperature: 0°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-MLPQ (5x5)
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package: 32-VFQFN Exposed Pad |
Voorraad41.820 |
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Infineon Technologies |
IC BALLAST CTRL PFC DIE
- Type: -
- Frequency: -
- Voltage - Supply: -
- Current - Supply: -
- Current - Output Source/Sink: -
- Dimming: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad6.544 |
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Infineon Technologies |
IC CTRLR SMPS QUASI-RESON DSO12
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 800V
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
- Duty Cycle: 50%
- Frequency - Switching: 52kHz
- Power (Watts): 53W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
- Supplier Device Package: PG-DSO-12
- Mounting Type: Surface Mount
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package: 16-SOIC (0.154", 3.90mm Width) 12 leads |
Voorraad5.472 |
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Infineon Technologies |
IC CONTROLLER PCM 80MQFP
- Function: Line Card Controller
- Interface: ISDN, PCM
- Number of Circuits: 1
- Voltage - Supply: 5V
- Current - Supply: 15mA
- Power (Watts): -
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 80-QFP
- Supplier Device Package: PG-MQFP-80
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package: 80-QFP |
Voorraad5.952 |
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Infineon Technologies |
IC TRANSCEIVER IND 8SOIC
- Type: -
- Protocol: -
- Number of Drivers/Receivers: -
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad2.304 |
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Infineon Technologies |
IC PHASE CONTROLLER 20-MLPQ
- Applications: Processor
- Current - Supply: 10mA
- Voltage - Supply: 8.4 V ~ 14 V
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-VFQFN Exposed Pad
- Supplier Device Package: 20-MLPQ (4x4)
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package: 20-VFQFN Exposed Pad |
Voorraad4.448 |
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Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Request a Quote |
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Infineon Technologies |
SEMICONDUCTOR OTHER
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Request a Quote |
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Infineon Technologies |
IC FRAM 4MBIT SPI/QUAD 8GQFN
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 4Mbit
- Memory Interface: SPI - Quad I/O
- Clock Frequency: 108 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.8V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UQFN
- Supplier Device Package: 8-GQFN (3.23x3.28)
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package: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 2600V 1500A DO200AB
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 2.6 kV
- Current - On State (It (AV)) (Max): 660 A
- Current - On State (It (RMS)) (Max): 1500 A
- Voltage - Gate Trigger (Vgt) (Max): 2.2 V
- Current - Gate Trigger (Igt) (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
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package: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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package: - |
Request a Quote |
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Infineon Technologies |
LOW POWER EASY AG-EASY2B-411
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 107 A
- Power - Max: 375 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2B
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package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 80V 300A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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package: - |
Voorraad6.357 |
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Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, I2C, LINbus, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 36
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 8x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-LQFP
- Supplier Device Package: 48-LQFP (7x7)
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package: - |
Request a Quote |
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Infineon Technologies |
IGBT MOD 1200V 900A 5100W
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 5100 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
package: - |
Request a Quote |
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