Infineon Technologies Producten

IKA15N65ET6XKSA1

Infineon Technologies

IGBT 650V 15A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

FZ1000R12KF5NOSA1

Infineon Technologies

IGBT MODULE 1200V 1000A

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

BSO052N03S

Infineon Technologies

MOSFET N-CH 30V 14A 8DSO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

package: 8-SOIC (0.154", 3.90mm Width)

IRFS7730TRLPBF

Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3107PBF

Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLS3036TRL7PP

Infineon Technologies

MOSFET N-CH 60V 240A D2PAK-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IRF7105TRPBF

Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

package: 8-SOIC (0.154", 3.90mm Width)

BCR 503 B6327

Infineon Technologies

TRANS PREBIAS NPN 300MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

package: TO-236-3, SC-59, SOT-23-3

BFQ 19S E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5.5GHz
• Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 7dB ~ 11.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (Ic) (Max): 210mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

package: TO-243AA

IKCM30F60HDXKMA1

Infineon Technologies

IFPS MODULES 24MDIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

package: 24-PowerDIP Module (1.028", 26.10mm)

TLE7237SLXUMA1

Infineon Technologies

IC DRIVER SPI RELAY CTRL 24SSOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 3:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 9 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 130mA, 260mA
• Rds On (Typ): 900 mOhm, 1.6 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: PG-SSOP-24

package: 24-SSOP (0.154", 3.90mm Width)

ITS42008SBDAUMA1

Infineon Technologies

IC SWITCH PWR HISIDE 8CH 36DSO

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: Parallel
• Voltage - Load: 11 V ~ 45 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): -
• Rds On (Typ): 150 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -25°C ~ 125°C (TJ)
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) 32 Leads
• Supplier Device Package: PG-DSO-36

package: 36-BSSOP (0.295", 7.50mm Width) 32 Leads

BTS436L2GATMA1

Infineon Technologies

IC HIGH SIDE PWR SWITCH T0263-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.75 V ~ 41 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 8.8A
• Rds On (Typ): 35 mOhm
• Input Type: -
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: PG-TO263-5-2

package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

ICE3PCS02GXUMA1

Infineon Technologies

IC PFC CONTROLLER CCM 8DSO

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 21kHz ~ 250kHz
• Current - Startup: 380µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

package: 8-SOIC (0.154", 3.90mm Width)

IRS2980SPBF

Infineon Technologies

IC LED DRIVER CTRLR DIM 8SOIC

• Type: DC DC Controller
• Topology: Step-Down (Buck)
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 10V
• Voltage - Supply (Max): 16.6V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: 150kHz
• Dimming: Analog, PWM
• Applications: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

6ED003L06C2X1SA1

Infineon Technologies

IC GATE DVR 3-PH 600V DIE

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT
• Voltage - Supply: 13 V ~ 17.5 V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): -
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 60ns, 26ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

XMC4100F64F128ABXQMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 35
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 20K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 10x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-19

package: 64-LQFP Exposed Pad

SLE66R01PNBX1SA1

Infineon Technologies

IC SECURITY CHIP CARD CTLR

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: ISO14443-3 Type A, NFC Forum Type 2
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

IR3565AMAS01TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

IR3563BMMS04TRP

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

package: -

TLE92613BQXXUMA2

Infineon Technologies

OPTIREG SYST BASIS CHIPS

• Applications: System Basis Chip
• Current - Supply: 3.5mA
• Voltage - Supply: 3V ~ 28V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-79

package: -

Request a Quote

ND350N12KHPSA1

Infineon Technologies

DIODE GP 1.2KV 350A PB50ND-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 350A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB50ND-1
• Operating Temperature - Junction: -40°C ~ 135°C

package: -

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CYT4DNJBRCQ1BZSGST

Infineon Technologies

IC MCU 32BIT 6.188MB FLSH 327BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
• Core Size: 32-Bit Quad-Core
• Speed: 320MHz
• Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
• Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
• Number of I/O: 168
• Program Memory Size: 6.188MB (6.188M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 640K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 327-BGA
• Supplier Device Package: 327-BGA

package: -

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CYAT81658-100AS48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

package: -

FS100R12KT4GB11BOSA1

Infineon Technologies

IGBT MOD 1200V 100A 515W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 515 W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: -

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CY25482SXI-010T

Infineon Technologies

IC SS CLOCK GENERATOR 8SOIC

• Type: Spread Spectrum Clock Generator
• PLL: Yes
• Input: LVCMOS
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:3
• Differential - Input:Output: No/No
• Frequency - Max: 166MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 2.25V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: -

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PMB8761V3-14

Infineon Technologies

INFINEON PMB8761V3.14 TELECOM IC

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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IPD50N10S3L16ATMA2

Infineon Technologies

MOSFET_(75V 120V(

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

package: -

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