Pagina 19 - Infineon Technologies Producten | Heisener Electronics
Contacteer ons
SalesDept@heisener.com +86-755-83210559 ext. 807
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies Producten

Archief 16.988
Pagina  19/607
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
IKD04N60RF
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 110µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.104
SPB20N60S5ATMA1
Infineon Technologies

MOSFET N-CH 600V 20A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.016
hot BUZ31L E3044A
Infineon Technologies

MOSFET N-CH 200V 13.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad168.000
hot IRF7842PBF
Infineon Technologies

MOSFET N-CH 40V 18A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.884
hot IRFSL3207ZPBF
Infineon Technologies

MOSFET N-CH 75V 120A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad4.912
hot IRU1205CLTR
Infineon Technologies

IC REG LIN POS ADJ 300MA SOT23-5

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 10V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 9.6V
  • Voltage Dropout (Max): 0.4V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
package: SC-74A, SOT-753
Voorraad14.340
TLE4473GV55AUMA1
Infineon Technologies

IC REG LINEAR 5V P-DSO-12-6

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 2
  • Voltage - Input (Max): 42V
  • Voltage - Output (Min/Fixed): 5V, Tracking
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.6V @ 100mA, 0.6V @ 200mA
  • Current - Output: 190mA, 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 200µA ~ 20mA
  • PSRR: 65dB (100Hz), 65dB (100Hz)
  • Control Features: Inhibit, Reset, Watchdog
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
  • Supplier Device Package: P-DSO-12-6
package: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Voorraad13.518
hot IPS5451S
Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5.5 V ~ 18 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3.5A
  • Rds On (Typ): 19 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2Pak (SMD-220 5-Lead)
package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Voorraad25.368
IR2183SPBF
Infineon Technologies

IC DRIVER HALF BRIDG 600V 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.184
TLE4906H
Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SC59

  • Function: Unipolar Switch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 13.5mT Trip, 5mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 2.7 V ~ 18 V
  • Current - Supply (Max): 6mA
  • Current - Output (Max): 20mA
  • Output Type: Open Collector
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
package: TO-236-3, SC-59, SOT-23-3
Voorraad5.832
TLE49646MXTMA1
Infineon Technologies

MAGNETIC SWITCH UNIPOLAR SOT23-3

  • Function: Unipolar Switch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 5.4mT Trip, 0.9mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3 V ~ 32 V
  • Current - Supply (Max): 2.5mA
  • Current - Output (Max): 25mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 170°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-15
package: TO-236-3, SC-59, SOT-23-3
Voorraad8.712
IR3088MPBF
Infineon Technologies

IC CONTROLLER PHASE 20L-MLPQ

  • Applications: Processor
  • Current - Supply: 10mA
  • Voltage - Supply: 8.4 V ~ 14 V
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-VFQFN Exposed Pad
  • Supplier Device Package: 20-MLPQ (4x4)
package: 20-VFQFN Exposed Pad
Voorraad2.480
BTS721L1XUMA1
Infineon Technologies

IC SWITCH HI-SIDE 4-CH DSO-20

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 34 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.5A
  • Rds On (Typ): 85 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-20
package: 20-SOIC (0.295", 7.50mm Width)
Voorraad22.218
BSM20GP60BOSA1
Infineon Technologies

IGBT MODULE 600V 35A 130W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 130 W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 10A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
IRF7103QTRPBF
Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
package: -
Request a Quote
CY8C4146AZA-S255
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
package: -
Request a Quote
AIDW12S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 12A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 650 V
  • Capacitance @ Vr, F: 363pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
package: -
Request a Quote
CY15B104QSN-108SXIT
Infineon Technologies

IC FRAM 4MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
package: -
Request a Quote
IPDD60R075CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 40A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 570µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2102 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 266W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
package: -
Request a Quote
A2C01180200
Infineon Technologies

IC MCU 32BIT 416PBGA

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
CY15B108QI-20BFXAT
Infineon Technologies

FRAM

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFLGA
  • Supplier Device Package: 8-UFLGA (3.28x3.23)
package: -
Request a Quote
FS300R12OE4PNOSA1
Infineon Technologies

IGBT MOD 1200V 600A 20MW

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Voorraad24
IPB055N08NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 55µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad1.794
FZ2400R12HP4B9HOSA2
Infineon Technologies

IGBT MODULE 1200V 3550A

  • IGBT Type: Trench
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 3550 A
  • Power - Max: 13500 W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
CYPD3171-24LQXQT
Infineon Technologies

CCG3PA

  • Protocol: USB
  • Function: Controller
  • Interface: I2C, SPI, UART
  • Standards: USB 3.0
  • Voltage - Supply: 2.7V, 3V ~ 5.5V, 24.5V
  • Current - Supply: 10mA
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Package / Case: 24-UFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
package: -
Voorraad30.048
CYAT81659-64AS48T
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
package: -
Request a Quote
TD160N18SOFHPSA1
Infineon Technologies

SCR MODULE 1800V 275A MODULE

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 160 A
  • Current - On State (It (RMS)) (Max): 275 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 145 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
package: -
Request a Quote
CY8C4149AZQ-S555
Infineon Technologies

IC MCU 32BIT 384KB FLSH 100LQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 54
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
package: -
Request a Quote