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Infineon Technologies |
IGBT 1200V DIE
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad7.952 |
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Infineon Technologies |
IGBT 600V 76A 268W TO247AC
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 76A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
- Power - Max: 268W
- Switching Energy: 390µJ (on), 632µJ (off)
- Input Type: Standard
- Gate Charge: 104nC
- Td (on/off) @ 25°C: 46ns/105ns
- Test Condition: 400V, 35A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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package: TO-247-3 |
Voorraad4.368 |
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Infineon Technologies |
IGBT 600V 85A 350W SUPER247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 350W
- Switching Energy: 790µJ (on), 1.98mJ (off)
- Input Type: Standard
- Gate Charge: 340nC
- Td (on/off) @ 25°C: 34ns/54ns
- Test Condition: 480V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
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package: TO-274AA |
Voorraad6.240 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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package: TO-236-3, SC-59, SOT-23-3 |
Voorraad3.056 |
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Infineon Technologies |
MOSFET N-CH 20V 36A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad2.832 |
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Infineon Technologies |
MOSFET N-CH 55V 16A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad9.324 |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad3.232 |
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Infineon Technologies |
MOSFET N-CH 60V 1.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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package: TO-261-4, TO-261AA |
Voorraad5.344 |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO262-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad4.752 |
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Infineon Technologies |
MOSFET N-CH 100V 10A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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package: TO-220-3 |
Voorraad5.216 |
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Infineon Technologies |
IC REG LINEAR 800MA SOT223
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 800mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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package: TO-261-4, TO-261AA |
Voorraad2.896 |
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Infineon Technologies |
IC MOTOR CONTRLLR I2C/SPI 64MQFP
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (6)
- Interface: I2C, RS-232, SPI
- Technology: Power MOSFET, IGBT
- Step Resolution: -
- Applications: Appliance
- Current - Output: -
- Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-MQFP (10x10)
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package: 64-LQFP |
Voorraad2.720 |
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Infineon Technologies |
IC PFC/BALLAST CONTROL 16-SOIC
- Type: PFC/Ballast Controller
- Frequency: 39kHz ~ 50kHz
- Voltage - Supply: 10 V ~ 17 V
- Current - Supply: 10mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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package: 16-SOIC (0.154", 3.90mm Width) |
Voorraad540.852 |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 64-PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 3
- Gate Type: IGBT
- Voltage - Supply: 12.5 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 115ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 68-PLCC
- Supplier Device Package: 68-PLCC
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package: 68-PLCC |
Voorraad6.192 |
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Infineon Technologies |
TVS DIODE 5.5VWM 30VC TSLP2-2
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 7.3V (Typ)
- Voltage - Clamping (Max) @ Ipp: 30V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: RF Antenna
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: TSLP-2-20
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package: SOD-882 |
Voorraad121.476 |
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Infineon Technologies |
IC TIRE PRESSURE SENSOR DSOSP-14
- Sensor Type: Tire Pressure Monitoring (TPMS)
- Output Type: Digital
- Operating Temperature: -
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package: - |
Voorraad15.864 |
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Infineon Technologies |
SPEED SENSORS 3SSO
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad7.740 |
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Infineon Technologies |
IC RELAY PHOTOVO 400V 120MA 6DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 400 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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package: 6-DIP (0.300", 7.62mm) |
Voorraad164.436 |
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Infineon Technologies |
IC MOTOR DRIVER PAR TO263-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: -
- Applications: Automotive
- Current - Output: 5A
- Voltage - Supply: 5.3 V ~ 40 V
- Voltage - Load: 5.3 V ~ 40 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7
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package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Voorraad68.700 |
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Infineon Technologies |
IC REG BUCK 56VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Voorraad4.768 |
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Infineon Technologies |
IC DRIVER SPI RELAY CTRL 24SSOP
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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package: - |
Request a Quote |
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Infineon Technologies |
DIODE MOD GP 3300V 400A AIHV130
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3300 V
- Current - Average Rectified (Io) (per Diode): 400A (DC)
- Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 400 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV130-3
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package: - |
Request a Quote |
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Infineon Technologies |
TrueTouch
- Touchscreen: 2 Wire Capacitive
- Resolution (Bits): 32 b
- Interface: I2C, SPI
- Voltage Reference: -
- Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
- Current - Supply: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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package: - |
Request a Quote |
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Infineon Technologies |
IC FLASH 2GBIT SPI/QUAD 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 2Gbit
- Memory Interface: SPI - Quad I/O, QPI
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 6 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-TBGA
- Supplier Device Package: 24-FBGA (8x8)
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package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR; D/A 2x7b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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package: - |
Voorraad7.350 |
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Infineon Technologies |
DIODE MODULE GP 2.2KV 700A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io) (per Diode): 700A
- Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 2200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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package: - |
Voorraad9 |
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Infineon Technologies |
IGBT NPT 600V 36A TO247-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 36 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
- Power - Max: 178 W
- Switching Energy: 690µJ
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 18ns/207ns
- Test Condition: 400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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package: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BT 1.0625MB FLSH 80LQFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 63
- Program Memory Size: 1.0625MB (1.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 96K x 8
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 52x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-LQFP
- Supplier Device Package: 80-LQFP (12x12)
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package: - |
Request a Quote |
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Infineon Technologies |
HIGH POWER_NEW
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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package: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA (DPAK)
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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package: - |
Request a Quote |
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