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Infineon Technologies Producten

Archief 16.988
Pagina  105/607
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Aantal
IRG4PC50KPBF
Infineon Technologies

IGBT 600V 52A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 52A
  • Current - Collector Pulsed (Icm): 104A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 490µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 38ns/160ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
package: TO-247-3
Voorraad6.704
IRL3715ZSTRLPBF
Infineon Technologies

MOSFET N-CH 20V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.336
hot IRFS3507
Infineon Technologies

MOSFET N-CH 75V 97A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad391.836
hot IRFH8330TRPBF
Infineon Technologies

MOSFET N-CH 30V 56A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad6.432
BSZ034N04LSATMA1
Infineon Technologies

MOSFET N-CH 40V 19A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad3.472
hot IRFR120ZPBF
Infineon Technologies

MOSFET N-CH 100V 8.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad390.900
PTVA123501FCV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad4.304
BAT6207WH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 40V 20MA SOT343

  • Diode Type: Schottky - 2 Independent
  • Voltage - Peak Reverse (Max): 40V
  • Current - Max: 20mA
  • Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
  • Resistance @ If, F: -
  • Power Dissipation (Max): 100mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
package: SC-82A, SOT-343
Voorraad6.800
IRD3CH24DB6
Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
package: -
Voorraad7.552
IRU1207-18CSTR
Infineon Technologies

IC REG LINEAR 1.8V 1A 8SOIC

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 12V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.65V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 3mA ~ 50mA
  • PSRR: -
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.552
TLE4269GMXUMA2
Infineon Technologies

IC REG LINEAR 5V 150MA 14DSOP

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 300µA ~ 8mA
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad6.928
TLE42694GXUMA1
Infineon Technologies

IC REG LINEAR 5V 150MA 8DSO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 45V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.5V @ 100mA
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 280µA ~ 8mA
  • PSRR: 70dB (100Hz)
  • Control Features: Reset
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad7.696
IR6210STRL
Infineon Technologies

IC DRIVER HIGH SIDE D2PAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 35 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 5A
  • Rds On (Typ): 200 mOhm
  • Input Type: Non-Inverting
  • Features: Status Flag
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2Pak (SMD-220 5-Lead)
package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Voorraad2.544
hot BTS3405G
Infineon Technologies

IC SWITCH PWR LOSIDE 8DSO

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 10V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 350mA
  • Rds On (Typ): 700 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad238.392
hot IRS21091PBF
Infineon Technologies

IC DVR HALF BRIDGE 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
package: 8-DIP (0.300", 7.62mm)
Voorraad34.644
PEB 20954 HT V1.1
Infineon Technologies

IC SIDEC T/E 32CHAN TQFP-144-8

  • Function: Smart Integrated Digital Echo Canceller (SIDEC)
  • Interface: PCM, Serial, UCC
  • Number of Circuits: 4
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: 350mA
  • Power (Watts): 900mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: P-TQFP-144
package: 144-LQFP
Voorraad3.392
XMC1201Q040F0016ABXUMA1
Infineon Technologies

IC MCU 32BIT 16KB FLASH 40VQFN

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 27
  • Program Memory Size: 16KB (16K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-38-9
package: 38-TFSOP (0.173", 4.40mm Width)
Voorraad5.728
hot PVA3054
Infineon Technologies

IC RELAY 300VAC/DC 40MA 8-DIP

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 160 Ohm
  • Load Current: 40mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 300 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
  • Supplier Device Package: 8-DIP Modified
  • Relay Type: Relay
package: 8-DIP (0.300", 7.62mm), 4 Leads
Voorraad80.496
C164CL6RMCAKXUMA2
Infineon Technologies

IC MCU 32BIT 80MQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Voorraad4.416
BSM15GD120DN2BOSA1
Infineon Technologies

IGBT MOD 1200V 25A 145W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Power - Max: 145 W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 15A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 100 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
Request a Quote
CY8C4146AZE-S255
Infineon Technologies

IC MCU 32BIT 64KB FLASH 64TQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
package: -
Request a Quote
S70FL01GSAGBHEC10
Infineon Technologies

STD SPI

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
package: -
Request a Quote
IQFH99N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
CY9AF142LAPMC-G-JNE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, I2C, SPI, UART/USART
  • Peripherals: LVD, POR, PWM, WDT
  • Number of I/O: 51
  • Program Memory Size: 160KB (160K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 12x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (12x12)
package: -
Request a Quote
MB4204PF-G-JN-ER-2KE1
Infineon Technologies

IC REG DC/DC CONV 14SOP

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
package: -
Request a Quote
IGT60R070D1ATMA4
Infineon Technologies

GANFET N-CH

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
package: -
Voorraad8.799
FD150R12RT4HOSA1
Infineon Technologies

IGBT MOD 1200V 150A 790W

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 790 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
package: -
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SIGC109T120R3
Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
package: -
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