IXYS Producten

IXSK40N60BD1

IXYS

IGBT 600V 75A 280W TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
• Power - Max: 280W
• Switching Energy: 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 50ns/110ns
• Test Condition: 480V, 40A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: TO-264AA(IXSK)

package: TO-264-3, TO-264AA

MIAA15WE600TMH

IXYS

MODULE IGBT CBI

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Power - Max: 80W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Current - Collector Cutoff (Max): 600µA
• Input Capacitance (Cies) @ Vce: 0.7nF @ 25V
• Input: Single Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Supplier Device Package: MiniPack2

package: MiniPack2

IXFK26N60Q

IXYS

MOSFET N-CH 600V 26A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

package: TO-264-3, TO-264AA

IXFT30N60Q

IXYS

MOSFET N-CH 600V 30A TO-268(D3)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXFH140N10P

IXYS

MOSFET N-CH 100V 140A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 600W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

IXTA56N15T

IXYS

MOSFET N-CH 150V 56A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA1R6N100D2

IXYS

MOSFET N-CH 1000V 1.6A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFH18N90P

IXYS

MOSFET N-CH TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

IXFH340N075T2

IXYS

MOSFET N-CH 75V 340A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 935W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

VTOF70-12IO7

IXYS

RECT BRIDGE 3PH 1200V FO-T-A

• Structure: Bridge, 3-Phase - All SCRs
• Number of SCRs, Diodes: 6 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 70A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

package: FO-T-A

MCC56-16IO8B

IXYS

MOD THYRISTOR DUAL 1600V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 64A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

package: TO-240AA

MDO500-20N1

IXYS

DIODE MODULE 2KV 560A Y1-CU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 560A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30mA @ 2000V
• Capacitance @ Vr, F: 576pF @ 700V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU
• Operating Temperature - Junction: -

package: Y1-CU

DSDI60-14A

IXYS

DIODE GEN PURP 1.4KV 63A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 63A
• Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 2mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -40°C ~ 150°C

package: TO-247-2

DPG15I300PA

IXYS

DIODE GEN PURP 300V 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

MDMA110P1600TG

IXYS

DIODE MODULE 1.6KV 110A TO240AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 110A
• Voltage - Forward (Vf) (Max) @ If: 1.18V @ 110A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA
• Supplier Device Package: TO-240AA

package: TO-240AA

DSP8-12AS-TUBE

IXYS

DIODE ARRAY GP 1200V 11A TO263

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 11A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: TO-263 (D2Pak)

package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

DLA5P800UC

IXYS

DIODE ARRAY GP 800V 5A TO252

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.18V @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)

package: TO-252-3, DPak (2 Leads + Tab), SC-63

VBO72-18NO7

IXYS

DIODE BRIDGE 1800V 72A PWS-D

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 72A
• Voltage - Forward (Vf) (Max) @ If: 1.08V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

package: PWS-D

VUO190-18NO7

IXYS

RECT BRIDGE 3PH 1800V PWS-E-1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 248A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
• Current - Reverse Leakage @ Vr: 200µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E1
• Supplier Device Package: PWS-E1

package: PWS-E1

IXDI514SIAT/R

IXYS

IC GATE DRIVER SGL 14A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

package: 8-SOIC (0.154", 3.90mm Width)

IXDI502D1T/R

IXYS

IC MOSF DRVR FAST DUAL INV 6-DFN

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 7.5ns, 6.5ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-DFN (4x5)

package: 6-VDFN Exposed Pad

SLMD121H4

IXYS

MONO SOLAR CELL 43MM X 14MM

• Power (Watts) - Max: 89mW
• Current @ Pmpp: 44.6mA
• Voltage @ Pmpp: 2V
• Current Short Circuit (Isc): 50mA
• Type: Monocrystalline
• Voltage - Open Circuit: 2.52V
• Operating Temperature: -
• Package / Case: Cell (4)
• Size / Dimension: 1.693" L x 0.551" W x 0.079" H (43.00mm x 14.00mm x 2.00mm)

package: Cell (4)

IXTA05N100HV-TRL

IXYS

MOSFET N-CH 1000V 750MA TO263HV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263HV
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

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MCMA700PD1600CB-PC

IXYS

SCR MODULE 1.6KV 700A COMPACK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 700 A
• Current - On State (It (RMS)) (Max): 1200 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ComPack

package: -

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IXYH30N65B3D1

IXYS

IGBT PT 650V 70A TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 70 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 270 W
• Switching Energy: 830µJ (on), 640µJ (off)
• Input Type: Standard
• Gate Charge: 45 nC
• Td (on/off) @ 25°C: 17ns/87ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 38 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

package: -

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IXTA2N100-TRL

IXYS

MOSFET N-CH TO263

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

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MCMA140PD1600TB-NI

IXYS

BIPOLAR MODULE THYRISTOR/DIODE T

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 140 A
• Current - On State (It (RMS)) (Max): 220 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

package: -

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DHG55I3300FE

IXYS

DIODE GP 3.3KV 50A ISOPLUS I4PAC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3300 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 60 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.65 µs
• Current - Reverse Leakage @ Vr: 100 µA @ 3300 V
• Capacitance @ Vr, F: 16pF @ 1.8kV, 1MHz
• Mounting Type: Through Hole
• Package / Case: i4-Pac™-5 (2 Leads)
• Supplier Device Package: ISOPLUS i4-PAC™
• Operating Temperature - Junction: -40°C ~ 150°C

package: -

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