IXYS Producten

IXGH20N60BD1

IXYS

IGBT 600V 40A 150W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
• Power - Max: 150W
• Switching Energy: 700µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 15ns/110ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

IXGX60N60B2D1

IXYS

IGBT 600V 75A 500W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
• Power - Max: 500W
• Switching Energy: 1mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 28ns/160ns
• Test Condition: 400V, 50A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

package: TO-247-3

IXA45IF1200HB

IXYS

IGBT 1200V 78A 325W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 78A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 325W
• Switching Energy: 3.8mJ (on), 4.1mJ (off)
• Input Type: Standard
• Gate Charge: 106nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 35A, 27 Ohm, 15V
• Reverse Recovery Time (trr): 350ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (HB)

package: TO-247-3

IXGP48N60C3

IXYS

IGBT 600V 75A 300W TO220AB

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 410µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/60ns
• Test Condition: 400V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

MUBW100-06A8

IXYS

MODULE IGBT CBI E3

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 125A
• Power - Max: 410W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector Cutoff (Max): 1.4mA
• Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

package: E3

IXFV12N90P

IXYS

MOSFET N-CH 900V 12A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

package: TO-220-3, Short Tab

IXTV26N50P

IXYS

MOSFET N-CH 500V 26A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 460W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

package: TO-220-3, Short Tab

MMIX1F160N30T

IXYS

MOSFET N-CH 300V 102A SMPD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 570W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SMPD
• Package / Case: 24-PowerSMD, 21 Leads

package: 24-PowerSMD, 21 Leads

IXFX50N50

IXYS

MOSFET N-CH 500V 50A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

package: TO-247-3

IXFH20N80Q

IXYS

MOSFET N-CH 800V 20A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

IXTA02N250HV

IXYS

MOSFET N-CH 2500V 0.2A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 2500V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AB
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTA170N075T2

IXYS

MOSFET N-CH 75V 170A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FMM150-0075P

IXYS

MOSFET 2N-CH 75V 150A I4-PAC-5

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 150A
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 120A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

package: i4-Pac?-5

CS19-12HO1C

IXYS

THYRISTOR PHASE 1200V ISOPLUS220

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 25mA
• Voltage - On State (Vtm) (Max): 1.65V
• Current - On State (It (AV)) (Max): 13A
• Current - On State (It (RMS)) (Max): 35A
• Current - Hold (Ih) (Max): 50mA
• Current - Off State (Max): 1mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220?
• Supplier Device Package: ISOPLUS220?

package: ISOPLUS220?

MCC500-16IO1

IXYS

THYRISTOR DIODE MOD 1600V M##500

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 545A
• Current - On State (It (RMS)) (Max): 1294A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
• Current - Hold (Ih) (Max): 1A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-500

package: WC-500

MCO500-14IO1

IXYS

MOD THYRISTOR SGL 1400V Y1-CU

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 560A
• Current - On State (It (RMS)) (Max): 880A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A, 16000A
• Current - Hold (Ih) (Max): 300mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU

package: Y1-CU

MCC161-20IO1

IXYS

SCR 175A 2000V

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2000V
• Current - On State (It (AV)) (Max): 165A
• Current - On State (It (RMS)) (Max): 300A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6

package: Y4-M6

MDO1200-16N1

IXYS

DIODE MODULE 1.6KV Y1-CU

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU
• Operating Temperature - Junction: -

package: Y1-CU

DSEP29-06BS

IXYS

DIODE GEN PURP 600V 30A TO263

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.52V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 250µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DGS9-025AS

IXYS

DIODE SCHOTTKY 250V 12A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.3mA @ 250V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-252-3, DPak (2 Leads + Tab), SC-63

DSEI2X61-02P

IXYS

DIODE MODULE 200V 71A ECO-PAC1

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 71A
• Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

package: ECO-PAC1

DSSK60-0045B

IXYS

DIODE ARRAY SCHOTTKY 45V TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

package: TO-3P-3 Full Pack

DSEC30-06A

IXYS

DIODE ARRAY GP 600V 15A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.03V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

package: TO-3P-3 Full Pack

VUO82-12NO7

IXYS

RECT BRIDGE 3PH 88A 1200V PWS-D

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 88A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

package: PWS-D

VBO25-14AO2

IXYS

DIODE BRIDGE 31A 1400V AVAL FO-A

• Diode Type: Single Phase
• Technology: Avalanche
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 38A
• Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-A
• Supplier Device Package: FO-A

package: 4-Square, FO-A

VBO13-14AO2

IXYS

DIODE BRIDGE 18A 1400V 1PH FO-A

• Diode Type: Single Phase
• Technology: Avalanche
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 55A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, FO-A
• Supplier Device Package: FO-A

package: 4-Square, FO-A

DSEI120-12AZ-TUB

IXYS

DIODE GP 1.2KV 109A TO268AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 109A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60 ns
• Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA
• Operating Temperature - Junction: -40°C ~ 150°C

package: -

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MDNA210UB2200PTED

IXYS

BIPOLARMODULE-RECTIFIER+BRAKE E2

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 2.2 kV
• Current - Average Rectified (Io): 210 A
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 210 A
• Current - Reverse Leakage @ Vr: 100 µA @ 2200 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E2
• Supplier Device Package: E2

package: -

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