IXYS Producten

IXGQ50N60C4D1

IXYS

IGBT 600V 90A 300W TO3P

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
• Power - Max: 300W
• Switching Energy: 950µJ (on), 840µJ (off)
• Input Type: Standard
• Gate Charge: 113nC
• Td (on/off) @ 25°C: 40ns/270ns
• Test Condition: 400V, 36A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

package: TO-3P-3, SC-65-3

IXGX32N170AH1

IXYS

IGBT 1700V 32A 350W PLUS247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 110A
• Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
• Power - Max: 350W
• Switching Energy: 4.1mJ (on), 1.25mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 27ns/270ns
• Test Condition: 850V, 32A, 2.7 Ohm, 15V
• Reverse Recovery Time (trr): 150ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

package: TO-247-3

MUBW6-06A6

IXYS

MODULE IGBT CBI E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7A
• Power - Max: 38W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Current - Collector Cutoff (Max): 10µA
• Input Capacitance (Cies) @ Vce: 0.34nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

package: E1

IXGN50N60BD3

IXYS

IGBT 600V FRD SOT-227B

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Power - Max: 250W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector Cutoff (Max): 200µA
• Input Capacitance (Cies) @ Vce: 4.1nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

package: SOT-227-4, miniBLOC

IXTY50N085T

IXYS

MOSFET N-CH 85V 50A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IXTH30N50

IXYS

MOSFET N-CH 500V 30A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

package: TO-247-3

IXTH44P15T

IXYS

MOSFET P-CH 150V 44A TO-247

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

package: TO-247-3

IXFX24N100F

IXYS

MOSFET N-CH 1KV 24A PLUS247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 560W (Tc)
• Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

package: TO-247-3

IXTQ44P15T

IXYS

MOSFET P-CH 150V 44A TO-3P

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

package: TO-3P-3, SC-65-3

IXTX90N25L2

IXYS

MOSFET N-CH 250V 90A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

package: TO-247-3

IXFH58N20

IXYS

MOSFET N-CH 200V 58A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

package: TO-247-3

150-101N09A-00

IXYS

RF MOSFET N-CHANNEL DE150

• Transistor Type: N-Channel
• Frequency: 100MHz
• Gain: -
• Voltage - Test: -
• Current Rating: 25µA
• Noise Figure: -
• Current - Test: -
• Power - Output: 200W
• Voltage - Rated: 100V
• Package / Case: 6-SMD, Flat Lead Exposed Pad
• Supplier Device Package: DE150

package: 6-SMD, Flat Lead Exposed Pad

GWM100-0085X1-SMD

IXYS

MOSFET 6N-CH 85V 103A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 103A
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Gull Wing
• Supplier Device Package: ISOPLUS-DIL?

package: 17-SMD, Gull Wing

FMP76-010T

IXYS

MOSFET N/P-CH 100V 62A/54A I4PAC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 62A, 54A
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
• Power - Max: 89W, 132W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

package: i4-Pac?-5

MMJX1H40N150

IXYS

THYRISTOR MOS 1500V 40A SMPD

• Voltage - Off State: 1500V
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: Standard Recovery
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 16-BESOP (0.787", 20.00mm Width) 15 Leads, Isolated Tab
• Supplier Device Package: -

package: 16-BESOP (0.787", 20.00mm Width) 15 Leads, Isolated Tab

MCD250-16IO1

IXYS

MOD THYRISTOR/DIODE 1600V Y2-DCB

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 287A
• Current - On State (It (RMS)) (Max): 450A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y2-DCB

package: Y2-DCB

VKO55-12IO7

IXYS

RECT BRIDGE 1PH 1200V FO-T-A

• Structure: Bridge, Single Phase - All SCRs
• Number of SCRs, Diodes: 4 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 53A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

package: FO-T-A

VCO180-18IO7

IXYS

MOD THYRISTOR 1800V 180A ECOPAC2

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 180A
• Current - On State (It (RMS)) (Max): 280A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 300mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4500A, 4900A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2

package: ECO-PAC2

MCC72-18IO8B

IXYS

MOD THYRISTOR DUAL 1800V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 115A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

package: TO-240AA

DSS17-06CR

IXYS

DIODE SCHOTTKY 600V 17A ISOPLUS

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 17A
• Voltage - Forward (Vf) (Max) @ If: 3.32V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?
• Operating Temperature - Junction: -55°C ~ 175°C

package: ISOPLUS247?

MDD175-34N1

IXYS

DIODE MODULE 3.4KV 240A Y1-CU

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3400V
• Current - Average Rectified (Io) (per Diode): 240A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 3400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Y1-CU
• Supplier Device Package: Y1-CU

package: Y1-CU

DSP8-08AS

IXYS

DIODE ARRAY GP 800V 11A TO263

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 11A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 7A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: TO-263 (D2Pak)

package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

VUO160-18NO7

IXYS

RECT BRIDGE 3PH 1800V PWS-E-1

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 175A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Current - Reverse Leakage @ Vr: 200µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E1
• Supplier Device Package: PWS-E1

package: PWS-E1

XOD17-68B

IXYS

SENSOR MONOCRYSTALLINE MOD 26X26

• Power (Watts) - Max: 112mW
• Current @ Pmpp: 222mA
• Voltage @ Pmpp: 505mV
• Current Short Circuit (Isc): 236mA
• Type: Monocrystalline
• Voltage - Open Circuit: 630mV
• Operating Temperature: -40°C ~ 85°C
• Package / Case: Cells
• Size / Dimension: 1.020" L x 1.020" W (26.00mm x 26.00mm)

package: Cells

IXTA2N100P-TRL

IXYS

MOSFET N-CH 1000V 2A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 7.5Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

package: -

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CLA20EF1200PZ-TUB

IXYS

SCR 1.2KV 35A TO263

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.3 V
• Current - Gate Trigger (Igt) (Max): 20 mA
• Voltage - On State (Vtm) (Max): 1.4 V
• Current - On State (It (AV)) (Max): 20 A
• Current - On State (It (RMS)) (Max): 35 A
• Current - Hold (Ih) (Max): 25 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

package: -

MIXG180W1200PTEH

IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

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IXFN130N65X3

IXYS

DISCRETE MOSFET 130A 650V X3 SOT

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

Request a Quote