IXYS Producten

IXGH10N100AU1

IXYS

IGBT 1000V 20A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1000V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
• Power - Max: 100W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 100ns/550ns
• Test Condition: 800V, 10A, 150 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

package: TO-247-3

IXLF19N250A

IXYS

IGBT 2500V 32A 250W I4PAC

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
• Power - Max: 250W
• Switching Energy: 15mJ (on), 30mJ (off)
• Input Type: Standard
• Gate Charge: 142nC
• Td (on/off) @ 25°C: -
• Test Condition: 1500V, 19A, 47 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

package: i4-Pac?-5 (3 leads)

IXFV22N50P

IXYS

MOSFET N-CH 500V 22A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

package: TO-220-3, Short Tab

IXFN40N110Q3

IXYS

MOSFET N-CH 1100V 35A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1100V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

package: SOT-227-4, miniBLOC

IXTH2N150L

IXYS

MOSFET N-CH 1500V 2A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 8.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 15 Ohm @ 1A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

IXFH30N60X

IXYS

MOSFET N-CH 600V 30A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

IXTP160N04T2

IXYS

MOSFET N-CH 40V 160A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IXTA44N25T

IXYS

MOSFET N-CH 250V 44A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXTA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTQ60N20L2

IXYS

MOSFET N-CH 200V 60A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

package: TO-3P-3, SC-65-3

IXFK21N100F

IXYS

MOSFET N-CH 1KV 21A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 (IXFK)
• Package / Case: TO-264-3, TO-264AA

package: TO-264-3, TO-264AA

CLA30E1200PB

IXYS

THYRISTOR PHASE 1200V TO-220AB

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Gate Trigger (Igt) (Max): 30mA
• Voltage - On State (Vtm) (Max): 1.59V
• Current - On State (It (AV)) (Max): 30A
• Current - On State (It (RMS)) (Max): 47A
• Current - Hold (Ih) (Max): 60mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

package: TO-220-3

MCO800-16IO1

IXYS

SCR THYRISTOR SGL 1600V WC-800

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: WC-800

package: WC-800

MCD72-08IO1B

IXYS

MOD THYRISTOR/DIO 800V TO-240AA

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 115A
• Current - On State (It (RMS)) (Max): 180A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1800A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

package: TO-240AA

DGS10-018A

IXYS

DIODE SCHOTTKY 180V 15A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 180V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.3mA @ 180V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

DSEP8-12A

IXYS

DIODE GEN PURP 1.2KV 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.94V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 60µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

package: TO-220-2

DSS60-0045B

IXYS

DIODE SCHOTTKY 45V 60A TO247AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 150°C

package: TO-247-2

HTZ270H64K

IXYS

DIODE MODULE 64KV 3.4A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 64000V
• Current - Average Rectified (Io) (per Diode): 3.4A
• Voltage - Forward (Vf) (Max) @ If: 46V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 64000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

package: Module

DSS2X200-0008D

IXYS

DIODE MODULE 8V 200A SOT227B

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 8V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 340mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400mA @ 8V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

package: SOT-227-4, miniBLOC

DSA320A100NB

IXYS

DIODE ARRAY SCHOTTKY 100V TO227

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: 940mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 100V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

package: -

VBO125-08NO7

IXYS

DIODE BRIDGE 124A 800V PWS-C

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 124A
• Voltage - Forward (Vf) (Max) @ If: 1.07V @ 50A
• Current - Reverse Leakage @ Vr: 200µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-C
• Supplier Device Package: PWS-C

package: PWS-C

VUO62-14NO7

IXYS

RECT BRIDGE 3PH 63A 1400V PWS-D

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 63A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
• Current - Reverse Leakage @ Vr: 300µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Supplier Device Package: PWS-D

package: PWS-D

IXF611S1

IXYS

IC DRIVER MOSF/IGBT HALF 8-SOIC

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Supplier Device Package: 8-SOIC

package: 8-SOIC

IXDD408YI

IXYS

IC MOSFET DRVR LS 8A SGL 5TO-263

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 25 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 8A, 8A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 14ns, 15ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
• Supplier Device Package: TO-263 (D2Pak)

package: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA

IXCY02M45

IXYS

IC CURRENT REGULATOR DPAK

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 2mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IXRFD615

IXYS

15A, 15V MOSFET DRIVER

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 8 V ~ 18 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 15A, 15A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 4ns, 4ns
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: 6-SMD

package: 6-SMD, Flat Leads

P0848YC06B

IXYS

SCR 600V 1713A W58

• Voltage - Off State: 600 V
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Voltage - On State (Vtm) (Max): 1.47 V
• Current - On State (It (AV)) (Max): 848 A
• Current - On State (It (RMS)) (Max): 1713 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 50 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: W58

package: -

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N2154JK040

IXYS

SCR 400V 4190A WP1

• Voltage - Off State: 400 V
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.58 V
• Current - On State (It (AV)) (Max): 2154 A
• Current - On State (It (RMS)) (Max): 4190 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: WP1

package: -

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W3082MC420

IXYS

DIODE GEN PURP 4.2KV 3120A W54

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4200 V
• Current - Average Rectified (Io): 3120A
• Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 µs
• Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: W54
• Operating Temperature - Junction: -40°C ~ 160°C

package: -

Request a Quote