Pagina 187 - ISSI, Integrated Silicon Solution Inc Producten - Memory | Heisener Electronics
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ISSI, Integrated Silicon Solution Inc Producten - Memory

Archief 5.873
Pagina  187/210
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42RM32160C-75BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
package: 90-LFBGA
Voorraad2.304
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
5.4ns
2.3 V ~ 3 V
0°C ~ 70°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS42RM16800G-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad5.104
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16800G-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad4.944
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad2.816
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad2.384
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
133MHz
-
6ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad4.304
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
166MHz
-
5.5ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS42RM16160E-6BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 2.3 V ~ 3 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
package: 54-TFBGA
Voorraad7.312
DRAM
SDRAM - Mobile
256Mb (16M x 16)
Parallel
166MHz
-
5.5ns
2.3 V ~ 3 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
IS41LV16257C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad6.416
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16257C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad4.672
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16256C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad7.728
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
hot IS41LV16256C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad12.960
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41LV16105C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
package: 44-TSOP (0.400", 10.16mm Width)
Voorraad6.432
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS41LV16105C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad6.384
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41LV16105C-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad5.136
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41LV16100C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
package: 44-TSOP (0.400", 10.16mm Width)
Voorraad7.840
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot IS41LV16100C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad4.336
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41LV16100C-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad2.944
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41C16257C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad2.800
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41C16257C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad6.240
DRAM
DRAM - FP
4Mb (256K x 16)
Parallel
-
-
18ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41C16256C-35TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad4.864
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41C16256C-35TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT 35NS 40TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 18ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width), 40 Leads
  • Supplier Device Package: 40-TSOP
package: 44-TSOP (0.400", 10.16mm Width), 40 Leads
Voorraad5.808
DRAM
DRAM - EDO
4Mb (256K x 16)
Parallel
-
-
18ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width), 40 Leads
40-TSOP
IS41C16105C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
package: 54-TSOP (0.400", 10.16mm Width)
Voorraad5.120
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS41C16105C-50TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
package: 54-TSOP (0.400", 10.16mm Width)
Voorraad7.472
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot IS41C16105C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad9.228
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41C16105C-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad6.592
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
IS41C16100C-50TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
package: 54-TSOP (0.400", 10.16mm Width)
Voorraad5.424
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot IS41C16100C-50TLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
package: 54-TSOP (0.400", 10.16mm Width)
Voorraad6.448
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot IS41C16100C-50KLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - EDO
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
package: 42-BSOJ (0.400", 10.16mm)
Voorraad15.372
DRAM
DRAM - EDO
16Mb (1M x 16)
Parallel
-
-
25ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ