GeneSiC Semiconductor Producten

MBRH24035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

package: D-67

MUR7040

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-203AB, DO-5, Stud

FR85M05

GeneSiC Semiconductor

DIODE GEN PURP 1KV 85A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 85A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

S85KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 85A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 180°C

package: DO-203AB, DO-5, Stud

S85GR

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 180°C

package: DO-203AB, DO-5, Stud

MUR2505R

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 25A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-203AA, DO-4, Stud

FR20KR05

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 20A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

GKN26/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -40°C ~ 180°C

package: DO-203AA, DO-4, Stud

1N1200AR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 200°C

package: DO-203AA, DO-4, Stud

S40KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 40A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 190°C

package: DO-203AB, DO-5, Stud

MBRTA60060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 300A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRTA500200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 250A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRTA40040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRF50020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 250A TO244AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 250A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

package: TO-244AB

MURTA40060

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MURTA40020

GeneSiC Semiconductor

DIODE GEN PURP 200V 200A 3 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MURT30005R

GeneSiC Semiconductor

DIODE MODULE 50V 300A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 300A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBR40060CTR

GeneSiC Semiconductor

DIODE MODULE 60V 400A 2TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 400A (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MSRTA200100(A)D

GeneSiC Semiconductor

DIODE GEN 1KV 200A 3 TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

GBPC5001T

GeneSiC Semiconductor

DIODE BRIDGE 100V 50A GBPC-T/W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

package: 4-Square, GBPC

KBPC5002W

GeneSiC Semiconductor

DIODE BRIDGE 200V 50A KBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, KBPC-W
• Supplier Device Package: KBPC-W

package: 4-Square, KBPC-W

GBPC1501W

GeneSiC Semiconductor

DIODE BRIDGE 100V 15A GBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

package: 4-Square, GBPC-W

GBU8A

GeneSiC Semiconductor

DIODE BRIDGE 50V 8A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

package: 4-SIP, GBU

GBU4M

GeneSiC Semiconductor

DIODE BRIDGE 1000V 4A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

package: 4-SIP, GBU

BR34

GeneSiC Semiconductor

DIODE BRIDGE 400V 3A BR-3

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -65°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, BR-3
• Supplier Device Package: BR-3

package: 4-Square, BR-3

KBL404G

GeneSiC Semiconductor

DIODE BRIDGE 400V 4A KBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -50°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBL
• Supplier Device Package: KBL

package: 4-SIP, KBL

MSRT200140AD

GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400 V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: -

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GBJ20K

GeneSiC Semiconductor

800V 20A GBJ SINGLE PHASE BRIDGE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 20 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

package: -

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