GeneSiC Semiconductor Producten

S320MR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 320A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -60°C ~ 180°C

package: DO-205AB, DO-9, Stud

1N3294AR

GeneSiC Semiconductor

DIODE GEN REV 800V 100A DO205AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 13mA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

package: DO-205AA, DO-8, Stud

MBR60100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A DO5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-203AB, DO-5, Stud

MUR7010R

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 70A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-203AB, DO-5, Stud

S85K

GeneSiC Semiconductor

DIODE GEN PURP 800V 85A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 180°C

package: DO-203AB, DO-5, Stud

S70KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 70A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 180°C

package: DO-203AB, DO-5, Stud

MUR2560R

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 25A DO4

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-203AA, DO-4, Stud

1N2128AR

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 60A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

package: DO-203AB, DO-5, Stud

S25Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 25A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: -
• Operating Temperature - Junction: -65°C ~ 175°C

package: DO-203AA, DO-4, Stud

FR30J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 30A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

FR20GR02

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 20A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

MBRTA80040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 400A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 400A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRTA60040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRF20035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 100A TO244AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

package: TO-244AB

MBRT60030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3 TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MSRTA60080(A)

GeneSiC Semiconductor

DIODE MODULE 800V 600A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 600A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 600A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MUR30020CT

GeneSiC Semiconductor

DIODE MODULE 200V 300A 2TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 300A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 90ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MUR20010CT

GeneSiC Semiconductor

DIODE MODULE 100V 200A 2TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MUR10060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 100A 2TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 100A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 110ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MBRT200200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A 3 TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MSRT15080(A)D

GeneSiC Semiconductor

DIODE GEN PURP 800V 150A 3 TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 150A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

GBPC2510T

GeneSiC Semiconductor

DIODE BRIDGE 1000V 25A GBPC-T

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC
• Supplier Device Package: GBPC

package: 4-Square, GBPC

KBPC35010T

GeneSiC Semiconductor

DIODE BRIDGE 1000V 35A KBPC-T/W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 4-Square, KBPC-T
• Supplier Device Package: KBPC-T

package: 4-Square, KBPC-T

KBPC2508W

GeneSiC Semiconductor

DIODE BRIDGE 800V 25A KBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, KBPC-W
• Supplier Device Package: KBPC-W

package: 4-Square, KBPC-W

KBPC1506T

GeneSiC Semiconductor

DIODE BRIDGE 600V 15A KBPC-T/W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 4-Square, KBPC-T
• Supplier Device Package: KBPC

package: 4-Square, KBPC-T

BR64

GeneSiC Semiconductor

DIODE BRIDGE 400V 6A BR-6

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -65°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, BR-6
• Supplier Device Package: BR-6

package: 4-Square, BR-6

G3R60MT07J-TR

GeneSiC Semiconductor

650V 60M TO-263-7 G3R SIC MOSFET

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 750 V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 182W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

package: -

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G2R1000MT33J-TR

GeneSiC Semiconductor

3300V 1000M TO-263-7 G2R SIC MOS

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 3300 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.5V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

package: -