GeneSiC Semiconductor Producten

GA06JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 6A TO-247AB

• FET Type: -
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AB
• Package / Case: TO-247-3

package: TO-247-3

MBRH24030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 240A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 240A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

package: D-67

MBRH15020RL

GeneSiC Semiconductor

DIODE MODULE 20V 150A D-67

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -

package: D-67

S300ER

GeneSiC Semiconductor

DIODE GEN REV 300V 300A DO205AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -60°C ~ 200°C

package: DO-205AB, DO-9, Stud

MUR5020R

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 50A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -55°C ~ 150°C

package: DO-203AB, DO-5, Stud

FR20A02

GeneSiC Semiconductor

DIODE GEN PURP 50V 20A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

package: DO-203AB, DO-5, Stud

S12Q

GeneSiC Semiconductor

DIODE GEN PURP 1200V 12A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 175°C

package: DO-203AA, DO-4, Stud

FR16D05

GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 150°C

package: DO-203AA, DO-4, Stud

MURF30005R

GeneSiC Semiconductor

DIODE GEN PURP 50V 150A TO244

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244

package: TO-244AB

MBRTA80045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 400A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 400A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRTA80030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 400A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 400A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 400A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRTA50045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 250A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 250A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBRF60030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A TO244AB

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 300A (DC)
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 20V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

package: TO-244AB

MBRT60030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 300A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MBR40045CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A 2 TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MURTA50060R

GeneSiC Semiconductor

DIODE MODULE 600V 500A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

MURF20020

GeneSiC Semiconductor

DIODE MODULE 200V 200A TO244

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244

package: TO-244AB

MBR200200CT

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A 2 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MBR12080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 120A 2TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 120A (DC)
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

package: Twin Tower

MUR2X060A12

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 60A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.35V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

package: SOT-227-4, miniBLOC

MBR2X080A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 80A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 120V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

package: SOT-227-4, miniBLOC

MURT40040R

GeneSiC Semiconductor

DIODE MODULE 400V 400A 3TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 180ns
• Current - Reverse Leakage @ Vr: 25µA @ 50V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

package: Three Tower

GBPC1502W

GeneSiC Semiconductor

DIODE BRIDGE 200V 15A GBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

package: 4-Square, GBPC-W

GBU10D

GeneSiC Semiconductor

DIODE BRIDGE 200V 10A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

package: 4-SIP, GBU

GD05MPS17J

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 18A TO263-7

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

package: -

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GD2X150MPS06N

GeneSiC Semiconductor

DIODE MOD SIC 650V 150A SOT227

• Diode Configuration: 2 Independent
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 150A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 650 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

package: -

GD60MPS06H

GeneSiC Semiconductor

DIODE SIL CARB 650V 82A TO247-2

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 82A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 650 V
• Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

package: -

G2R1000MT17J-TR

GeneSiC Semiconductor

1700V 1000M TO-263-7 G2R SIC MOS

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1700 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): 44W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

package: -