Pagina 12 - GeneSiC Semiconductor Producten | Heisener Electronics
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GeneSiC Semiconductor Producten

Archief 1.989
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Afbeelding
Onderdeelnummer
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package
Voorraad
Aantal
MBRH20040RL
GeneSiC Semiconductor

DIODE MODULE 40V 200A D-67

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
package: D-67 HALF-PAK
Voorraad6.160
1N8031-GA
GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 5µA @ 650V
  • Capacitance @ Vr, F: 76pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-276AA
  • Supplier Device Package: TO-276
  • Operating Temperature - Junction: -55°C ~ 250°C
package: TO-276AA
Voorraad3.216
MURH10010
GeneSiC Semiconductor

DIODE MODULE 100V 100A D-67

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
package: D-67
Voorraad2.896
MUR7040R
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 70A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -55°C ~ 150°C
package: DO-203AB, DO-5, Stud
Voorraad4.704
1N1187R
GeneSiC Semiconductor

DIODE GEN PURP REV 300V 35A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 190°C
package: DO-203AB, DO-5, Stud
Voorraad5.504
GKN71/04
GeneSiC Semiconductor

DIODE GEN PURP 400V 95A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 95A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 180°C
package: DO-203AB, DO-5, Stud
Voorraad6.512
FR6G02
GeneSiC Semiconductor

DIODE GEN PURP 400V 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad3.584
1N3882
GeneSiC Semiconductor

DIODE GEN PURP 300V 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 15µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad5.856
hot 1N3891
GeneSiC Semiconductor

DIODE GEN PURP 200V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
package: DO-203AA, DO-4, Stud
Voorraad6.336
MBRF500200R
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 250A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
package: TO-244AB
Voorraad7.360
FST63100M
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 30A D61-3M

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D61-3M
  • Supplier Device Package: D61-3M
package: D61-3M
Voorraad7.744
MBR30045CTRL
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 2 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
package: Twin Tower
Voorraad2.000
MURT30060R
GeneSiC Semiconductor

DIODE MODULE 600V 300A 3TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 300A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
package: Three Tower
Voorraad5.664
MBR40045CT
GeneSiC Semiconductor

DIODE MODULE 45V 400A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 400A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
package: Twin Tower
Voorraad6.480
MBRT30020
GeneSiC Semiconductor

DIODE MODULE 20V 300A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io) (per Diode): 300A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
package: Three Tower
Voorraad7.648
FST12030
GeneSiC Semiconductor

DIODE MODULE 30V 120A TO249AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 120A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-249AB
  • Supplier Device Package: TO-249AB
package: TO-249AB
Voorraad6.672
MSRT100140(A)D
GeneSiC Semiconductor

DIODE GEN 1.4KV 100A 3 TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1400V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
package: Three Tower
Voorraad3.376
MBR2X080A200
GeneSiC Semiconductor

DIODE SCHOTTKY 200V 80A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 80A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 200V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
package: SOT-227-4, miniBLOC
Voorraad5.248
FST8345M
GeneSiC Semiconductor

DIODE MODULE 45V 80A D61-3M

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 80A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: D61-3M
  • Supplier Device Package: D61-3M
package: D61-3M
Voorraad3.664
GBPC2501W
GeneSiC Semiconductor

DIODE BRIDGE 100V 25A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
package: 4-Square, GBPC-W
Voorraad3.840
KBU1002
GeneSiC Semiconductor

DIODE BRIDGE 200V 10A KBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBU
  • Supplier Device Package: KBU
package: 4-SIP, KBU
Voorraad3.056
GD2X75MPS17N
GeneSiC Semiconductor

DIODE MOD SIC 1700V 115A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io) (per Diode): 115A (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
package: -
Voorraad66
GD20MPS12H
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 39A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 39A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 737pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Voorraad9.507
MSRT20060AD
GeneSiC Semiconductor

DIODE MODULE GP 600V 200A 3TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
package: -
Request a Quote
MSRTA300140AD
GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 1400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
package: -
Request a Quote
GB05MPS33-263
GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
  • Capacitance @ Vr, F: 288pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
package: -
Request a Quote
MSRTA30060D
GeneSiC Semiconductor

DIODE MODULE GP 600V 300A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
package: -
Request a Quote
G2R1000MT33J
GeneSiC Semiconductor

SIC MOSFET N-CH 4A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 3300 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 3.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 1000 V
  • Vgs (Max): +20V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
package: -
Voorraad11.016