Pagina 970 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  970/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AOI2614
Alpha & Omega Semiconductor Inc.

MOSFET NCH 60V 35A TO251A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPak
package: TO-251-3 Stub Leads, IPak
Voorraad3.360
MOSFET (Metal Oxide)
60V
13A (Ta), 35A (Tc)
4.5V, 10V
2.5V @ 250µA
30nC @ 10V
1340pF @ 30V
±20V
-
6.2W (Ta), 60W (Tc)
16 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPak
SI5485DU-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 12A PPAK CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? ChipFet Single
  • Package / Case: PowerPAK? ChipFET? Single
package: PowerPAK? ChipFET? Single
Voorraad4.368
MOSFET (Metal Oxide)
20V
12A (Tc)
2.5V, 4.5V
1.5V @ 250µA
42nC @ 8V
1100pF @ 10V
±12V
-
3.1W (Ta), 31W (Tc)
25 mOhm @ 5.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFet Single
PowerPAK? ChipFET? Single
IXTA240N055T7
IXYS

MOSFET N-CH 55V 240A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Voorraad5.680
MOSFET (Metal Oxide)
55V
240A (Tc)
10V
4V @ 250µA
170nC @ 10V
7600pF @ 25V
±20V
-
480W (Tc)
3.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot NTB125N02RG
ON Semiconductor

MOSFET N-CH 24V 15.9A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Ta), 120.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.98W (Ta), 113.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad390.000
MOSFET (Metal Oxide)
24V
95A (Ta), 120.5A (Tc)
4.5V, 10V
2V @ 250µA
28nC @ 4.5V
3440pF @ 20V
±20V
-
1.98W (Ta), 113.6W (Tc)
4.6 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC26N12NX1SA1
Infineon Technologies

MOSFET N-CH 120V BARE DIE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 244µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Sawn on foil
  • Package / Case: Die
package: Die
Voorraad2.592
MOSFET (Metal Oxide)
120V
1A (Tj)
10V
4V @ 244µA
-
-
-
-
-
100 mOhm @ 2A, 10V
-
Surface Mount
Sawn on foil
Die
IXFK52N30Q
IXYS

MOSFET N-CH 300V 52A TO-264AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad7.232
MOSFET (Metal Oxide)
300V
52A (Tc)
10V
4V @ 4mA
150nC @ 10V
5300pF @ 25V
±20V
-
360W (Tc)
60 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TSM80N08CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3905pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 113.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad3.232
MOSFET (Metal Oxide)
75V
80A (Tc)
10V
4V @ 250µA
91.5nC @ 10V
3905pF @ 30V
±20V
-
113.6W (Tc)
8 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot NTGS4141NT1G
ON Semiconductor

MOSFET N-CH 30V 3.5A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
package: SOT-23-6
Voorraad1.566.420
MOSFET (Metal Oxide)
30V
3.5A (Ta)
4.5V, 10V
3V @ 250µA
12nC @ 10V
560pF @ 24V
±20V
-
500mW (Ta)
25 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot FDN352AP
Fairchild/ON Semiconductor

MOSFET P-CH 30V 1.3A SSOT-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad722.064
MOSFET (Metal Oxide)
30V
1.3A (Ta)
4.5V, 10V
2.5V @ 250µA
1.9nC @ 4.5V
150pF @ 15V
±25V
-
500mW (Ta)
180 mOhm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
IXFX32N80Q3
IXYS

MOSFET N-CH 800V 32A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.024
MOSFET (Metal Oxide)
800V
32A (Tc)
10V
6.5V @ 4mA
140nC @ 10V
6940pF @ 25V
±30V
-
1000W (Tc)
270 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS247?-3
TO-247-3
hot IRLS3034TRL7PP
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Voorraad17.568
MOSFET (Metal Oxide)
40V
240A (Tc)
4.5V, 10V
2.5V @ 250µA
180nC @ 4.5V
10990pF @ 40V
±20V
-
380W (Tc)
1.4 mOhm @ 200A, 10V
-
Surface Mount
D2PAK (7-Lead)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
AON6362
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 27A DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
package: 8-PowerSMD, Flat Leads
Voorraad4.480
MOSFET (Metal Oxide)
30V
27A (Ta), 60A (Tc)
4.5V, 10V
2.2V @ 250µA
13nC @ 10V
820pF @ 15V
±20V
-
6.2W (Ta), 31W (Tc)
5.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
ATP404-TL-H
ON Semiconductor

MOSFET N-CH 60V 95A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
package: ATPAK (2 leads+tab)
Voorraad28.038
MOSFET (Metal Oxide)
60V
95A (Ta)
4.5V, 10V
-
120nC @ 10V
6400pF @ 20V
±20V
-
70W (Tc)
7.2 mOhm @ 48A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
hot IRFR420APBF
Vishay Siliconix

MOSFET N-CH 500V 3.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.000
MOSFET (Metal Oxide)
500V
3.3A (Tc)
10V
4.5V @ 250µA
17nC @ 10V
340pF @ 25V
±30V
-
83W (Tc)
3 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
BSZ123N08NS3 G
Infineon Technologies

MOSFET N-CH 80V 40A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 33µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad685.752
MOSFET (Metal Oxide)
80V
10A (Ta), 40A (Tc)
6V, 10V
3.5V @ 33µA
25nC @ 10V
1700pF @ 40V
±20V
-
2.1W (Ta), 66W (Tc)
12.3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerVDFN
TK2P60D-TE16L1-NV
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
2A (Ta)
10V
4.4V @ 1mA
7 nC @ 10 V
280 pF @ 25 V
±30V
-
60W (Tc)
4.3Ohm @ 1A, 10V
150°C
Surface Mount
PW-MOLD
TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ5410_R2_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1323 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad4.722
MOSFET (Metal Oxide)
30 V
15A (Ta), 80A (Tc)
4.5V, 10V
2.5V @ 250µA
12 nC @ 4.5 V
1323 pF @ 25 V
±20V
-
2W (Ta), 62W (Tc)
6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
RQ5A025ZPTL
Rohm Semiconductor

MOSFET P-CH 12V 2.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
package: -
Voorraad8.985
MOSFET (Metal Oxide)
12 V
2.5A (Ta)
1.5V, 4.5V
1V @ 1mA
13 nC @ 4.5 V
1350 pF @ 6 V
±10V
-
760mW (Ta)
61mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT3
SC-96
ISC011N03L5SATMA1
Infineon Technologies

MOSFET N-CH 30V 37A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
37A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
72 nC @ 10 V
4700 pF @ 15 V
±20V
-
2.5W (Ta), 96W (Tc)
1.1mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
XP6NA1R7CMT
YAGEO XSEMI

FET N-CH 60V 41.6A 190A PMPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PMPAK® 5 x 6
  • Package / Case: 8-PowerLDFN
package: -
Voorraad3.000
MOSFET (Metal Oxide)
60 V
41.6A (Ta), 190A (Tc)
10V
4V @ 250µA
160 nC @ 10 V
8800 pF @ 50 V
±20V
-
5W (Ta), 104W (Tc)
1.7mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PMPAK® 5 x 6
8-PowerLDFN
R6535ENZ4C13
Rohm Semiconductor

650V 35A TO-247, LOW-NOISE POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.21mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 379W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247G
  • Package / Case: TO-247-3
package: -
Voorraad1.713
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
4V @ 1.21mA
110 nC @ 10 V
2600 pF @ 25 V
±20V
-
379W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-247G
TO-247-3
ZXMN10A08E6QTA
Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
1.5A (Ta)
6V, 10V
4V @ 250µA
7.7 nC @ 10 V
405 pF @ 50 V
±20V
-
1.1W (Ta)
250mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
SIHP7N60E-BE3
Vishay Siliconix

N-CHANNEL 600V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: -
Voorraad5.970
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
4V @ 250µA
40 nC @ 10 V
680 pF @ 100 V
±30V
-
78W (Tc)
600mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
BSZ010NE2LS5ATMA1
Infineon Technologies

MOSFET N-CH 25V 32A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
package: -
Voorraad18.261
MOSFET (Metal Oxide)
25 V
32A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
29 nC @ 4.5 V
3900 pF @ 12 V
±16V
-
2.1W (Ta), 69W (Tc)
1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IRF822
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
2.2A (Tc)
10V
4V @ 250µA
19 nC @ 10 V
360 pF @ 25 V
±20V
-
50W (Tc)
4Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIAA02DJ-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 22A/52A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
  • Vgs (Max): +12V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6
  • Package / Case: PowerPAK® SC-70-6
package: -
Voorraad21.630
MOSFET (Metal Oxide)
20 V
22A (Ta), 52A (Tc)
2.5V, 10V
1.6V @ 250µA
33 nC @ 10 V
1250 pF @ 10 V
+12V, -8V
-
3.5W (Ta), 19W (Tc)
4.7mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
HUF76121P3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 47A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
47A (Tc)
4.5V, 10V
3V @ 250µA
30 nC @ 10 V
850 pF @ 25 V
±20V
-
75W (Tc)
21mOhm @ 47A, 10V
-40°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
AO3498
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.8A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: 3-SMD, SOT-23-3 Variant
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
2.5V, 10V
1.5V @ 250µA
20 nC @ 10 V
235 pF @ 15 V
±12V
-
1.4W (Ta)
55mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant