Transistors - FET's, MOSFET's - Single

IRF3704PBF

Infineon Technologies

MOSFET N-CH 20V 77A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

package: TO-220-3

IRFR6215TRL

Infineon Technologies

MOSFET P-CH 150V 13A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF1404STRR

Infineon Technologies

MOSFET N-CH 40V 162A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL1004S

Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PMZB380XN,315

Nexperia USA Inc.

MOSFET N-CH 30V SGL 3DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 930mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN1006B (0.6x1)
• Package / Case: 3-XFDFN

package: 3-XFDFN

2SK2845(TE16L1,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 1A DP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DP
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

HUFA75345G3

Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 325W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

IPP65R280E6

Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

package: TO-220-3

DMN3008SFGQ-13

Diodes Incorporated

MOSFET NCH 30V 17.6A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 62A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

package: 8-PowerVDFN

BUK9M34-100EX

Nexperia USA Inc.

MOSFET N-CH 100V 29A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 24.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2844pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 34 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK33
• Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)

package: SOT-1210, 8-LFPAK33 (5-Lead)

FCH165N60E

Fairchild/ON Semiconductor

MOSFET N-CH 600V 23A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2434pF @ 380V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 227W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 11.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

package: TO-247-3

2SK326800L

Panasonic Electronic Components

MOSFET N-CH 100V 15A UG-2

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 12A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DL
• Package / Case: U-G2

package: U-G2

RS1E200BNTB

Rohm Semiconductor

MOSFET N-CH 30V 20A 8HSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-HSOP
• Package / Case: 8-PowerTDFN

package: 8-PowerTDFN

FDMC8882

Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
• Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3)
• Package / Case: 8-PowerWDFN

package: 8-PowerWDFN

BUK7E2R6-60E,127

Nexperia USA Inc.

MOSFET N-CH 60V 120A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 349W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFSL9N60APBF

Vishay Siliconix

MOSFET N-CH 600V 9.2A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

package: TO-262-3 Long Leads, I2Pak, TO-262AA

BSS138TA

Diodes Incorporated

MOSFET N-CH 50V 200MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

RJK1028DSP-00-J5

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

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IAUC120N06S5N017ATMA1

Infineon Technologies

MOSFET N-CH 60V 120A TDSON-8-43

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 3.4V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-43
• Package / Case: 8-PowerTDFN

package: -

DI049N06PTK-AQ

Diotec Semiconductor

IC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 65 V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 25W (Tc)
• Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-QFN (3x3)
• Package / Case: 8-PowerVDFN

package: -

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SQJ138EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 330A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 312W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

package: -

GSFN3908

Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 48A, 30V,

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PPAK (3.1x3.05)
• Package / Case: 8-PowerVDFN

package: -

STF22N60DM6

STMicroelectronics

MOSFET N-CH 600V 15A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

package: -

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DMP2110UW-13

Diodes Incorporated

MOSFET P-CH 20V 2A SOT323

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 6 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 490mW
• Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-323
• Package / Case: SC-70, SOT-323

package: -

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TK190A65Z-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 15A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 610µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

package: -

IPP60R600C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

package: -

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2SK2631-TL-E-ON

onsemi

MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

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MCAC80P06Y-TP

Micro Commercial Co

P-CHANNEL MOSFET, DFN5060

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 80A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 30 V
• Vgs (Max): ±18V
• FET Feature: -
• Power Dissipation (Max): 120W (Tj)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN5060
• Package / Case: 8-PowerTDFN

package: -