Transistors - FET's, MOSFET's - Single

IPB100N06S2L05ATMA1

Infineon Technologies

MOSFET N-CH 55V 100A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFL024NPBF

Infineon Technologies

MOSFET N-CH 55V 2.8A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

AON7444

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 33A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (3x3)
• Package / Case: 8-PowerSMD, Flat Leads

package: 8-PowerSMD, Flat Leads

NTTFS4840NTWG

ON Semiconductor

MOSFET N-CH 30V 4.6A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 840mW (Ta), 27.8W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3x3)
• Package / Case: 8-PowerWDFN

package: 8-PowerWDFN

BUK7213-40A,118

NXP

MOSFET N-CH 40V 55A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

APTM50DAM35TG

Microsemi Corporation

MOSFET N-CH 500V 99A SP4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 99A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 781W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP4
• Package / Case: SP4

package: SP4

NTD78N03T4

ON Semiconductor

MOSFET N-CH 25V 11.4A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta), 64W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

SFF9250L

Fairchild/ON Semiconductor

MOSFET P-CH 200V 12.6A TO-3PF

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.3A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PF
• Package / Case: SC-94

package: SC-94

FQPF9N08L

Fairchild/ON Semiconductor

MOSFET N-CH 80V 7A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 23W (Tc)
• Rds On (Max) @ Id, Vgs: 210 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

NTF3055L175T1

ON Semiconductor

MOSFET N-CH 60V 2A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 175 mOhm @ 1A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223 (TO-261)
• Package / Case: TO-261-4, TO-261AA

package: TO-261-4, TO-261AA

IRF520S

Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFP360LC

Vishay Siliconix

MOSFET N-CH 400V 23A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

package: TO-247-3

IPD60R180P7SAUMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

BSD214SNH6327XTSA1

Infineon Technologies

MOSFET N-CH 20V 1.5A SOT363

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT363-6
• Package / Case: 6-VSSOP, SC-88, SOT-363

package: 6-VSSOP, SC-88, SOT-363

IRFPF50

Vishay Siliconix

MOSFET N-CH 900V 6.7A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

package: TO-247-3

IPU80R900P7AKMA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

package: TO-251-3 Short Leads, IPak, TO-251AA

STF24NM65N

STMicroelectronics

MOSFET N-CH 650V 19A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FP
• Package / Case: TO-220-3 Full Pack

package: TO-220-3 Full Pack

TN2540N3-G

Microchip Technology

MOSFET N-CH 400V 0.175A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

package: TO-226-3, TO-92-3 (TO-226AA)

RSD130P10TL

Rohm Semiconductor

MOSFET P-CH 100V 13A SOT428

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Ta)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

package: TO-252-3, DPak (2 Leads + Tab), SC-63

ZXMN2A01E6TA

Diodes Incorporated

MOSFET N-CH 20V 2.44 A SOT-23-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 303pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6

package: SOT-23-6

BSR202N L6327

Infineon Technologies

MOSFET N-CH 20V 3.8A SC-59

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 3.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: TO-236-3, SC-59, SOT-23-3

SM2431PSANC-TRG-ML

MOSLEADER

P -20V -4.1A SOT-23N

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

Request a Quote

2SK3293-TD-E

onsemi

NCH 4V DRIVE SERIES

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

package: -

Request a Quote

SQA411CEJW-T1_GE3

Vishay Siliconix

AUTOMOTIVE P-CHANNEL 60 V (D-S)

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 13.6W (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PowerPAK®SC-70W-6
• Package / Case: PowerPAK® SC-70-6

package: -

EPC2304

EPC

Linear IC's

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
• Vgs (Max): +6V, -4V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 7-QFN (3x5)
• Package / Case: 7-PowerWQFN

package: -

Request a Quote

IAUA250N04S6N007EAUMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-5-4
• Package / Case: 5-PowerSFN

package: -

DMTH6002LPSW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 205A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8289 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 167W (Tc)
• Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8 (SWP)
• Package / Case: 8-PowerTDFN

package: -

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DMN3300UQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 193 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW
• Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

package: -

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