Pagina 557 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  557/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI120N06S403AKSA2
Infineon Technologies

MOSFET N-CH TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad3.920
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 120µA
160nC @ 10V
13150pF @ 25V
±20V
-
167W (Tc)
3.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3-1
TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6662TR1PBF
Infineon Technologies

MOSFET N-CH 100V 8.3A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MZ
  • Package / Case: DirectFET? Isometric MZ
package: DirectFET? Isometric MZ
Voorraad2.720
MOSFET (Metal Oxide)
100V
8.3A (Ta), 47A (Tc)
10V
4.9V @ 100µA
31nC @ 10V
1360pF @ 25V
±20V
-
2.8W (Ta), 89W (Tc)
22 mOhm @ 8.2A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MZ
DirectFET? Isometric MZ
GP1M003A080PH
Global Power Technologies Group

MOSFET N-CH 800V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad2.912
MOSFET (Metal Oxide)
800V
3A (Tc)
10V
4V @ 250µA
19nC @ 10V
696pF @ 25V
±30V
-
94W (Tc)
4.2 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
NVTP2955G
ON Semiconductor

MOSFET 60V 12A 196

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad3.968
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot NTD4813N-1G
ON Semiconductor

MOSFET N-CH 30V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 35.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad6.208
MOSFET (Metal Oxide)
30V
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
2.5V @ 250µA
7.9nC @ 4.5V
860pF @ 12V
±20V
-
1.27W (Ta), 35.3W (Tc)
13 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
BUK98150-55A,135
NXP

MOSFET N-CH 55V 5.5A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 8W (Tc)
  • Rds On (Max) @ Id, Vgs: 137 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad5.216
MOSFET (Metal Oxide)
55V
5.5A (Tc)
4.5V, 10V
2V @ 1mA
5.3nC @ 5V
320pF @ 25V
±15V
-
8W (Tc)
137 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
VS-FC80NA20
Vishay Semiconductor Diodes Division

MOSFET N-CH 200V 108A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 108A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10720pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 405W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad7.216
MOSFET (Metal Oxide)
200V
108A
10V
5.5V @ 250µA
161nC @ 10V
10720pF @ 50V
±30V
-
405W (Tc)
14 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
-
SOT-227
SOT-227-4, miniBLOC
APT25SM120S
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 175W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: D3
  • Package / Case: D-3 Module
package: D-3 Module
Voorraad7.504
SiCFET (Silicon Carbide)
1200V
25A (Tc)
-
2.5V @ 1mA
72nC @ 20V
-
-
-
175W (Tc)
175 mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
D3
D-3 Module
DMT3006LFG-13
Diodes Incorporated

MOSFET NCH 30V 16A POWERDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad6.432
MOSFET (Metal Oxide)
30V
16A (Ta), 55.6A (Tc)
4.5V, 10V
3V @ 250µA
22.6nC @ 10V
1320pF @ 15V
±20V
-
27.8W (Tc)
6 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
NVTFS4C13NTWG
ON Semiconductor

MOSFET N-CH 30V 40A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad6.864
MOSFET (Metal Oxide)
30V
14A (Ta)
4.5V, 10V
2.1V @ 250µA
15.2nC @ 10V
770pF @ 15V
±20V
-
3W (Ta), 26W (Tc)
9.4 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot NTMFS4897NFT1G
ON Semiconductor

MOSFET N-CH 30V SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 171A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 83.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta), 96.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
package: 8-PowerTDFN, 5 Leads
Voorraad7.632
MOSFET (Metal Oxide)
30V
17A (Ta), 171A (Tc)
4.5V, 10V
2.5V @ 1mA
83.6nC @ 10V
5660pF @ 15V
±20V
-
950mW (Ta), 96.2W (Tc)
2 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot DMN3051LDM-7
Diodes Incorporated

MOSFET N-CH 30V 4A SOT26

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
package: SOT-23-6
Voorraad504.948
MOSFET (Metal Oxide)
30V
4A (Ta)
4.5V, 10V
2.2V @ 250µA
8.6nC @ 10V
424pF @ 5V
±20V
-
900mW (Ta)
38 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
IXTH130N10T
IXYS

MOSFET N-CH 100V 130A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.536
MOSFET (Metal Oxide)
100V
130A (Tc)
10V
4.5V @ 250µA
104nC @ 10V
5080pF @ 25V
±20V
-
360W (Tc)
9.1 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot FCPF400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 11A ZNR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad4.400
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
4.5V @ 1.1mA
56nC @ 10V
2350pF @ 100V
±20V
-
35.7W (Tc)
400 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
IPD50R1K4CEBTMA1
Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.744
MOSFET (Metal Oxide)
500V
3.1A (Tc)
13V
3.5V @ 70µA
1nC @ 10V
178pF @ 100V
±20V
-
25W (Tc)
1.4 Ohm @ 900mA, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN070-200P,127
Nexperia USA Inc.

MOSFET N-CH 200V 35A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad29.298
MOSFET (Metal Oxide)
200V
35A (Tc)
10V
4V @ 1mA
77nC @ 10V
4570pF @ 25V
±20V
-
250W (Tc)
70 mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SK8403180L
Panasonic Electronic Components

MOSFET N-CH 30V 12A 8HSSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSSO
  • Package / Case: 8-SMD, Flat Lead
package: 8-SMD, Flat Lead
Voorraad24.264
MOSFET (Metal Oxide)
30V
12A (Ta), 39A (Tc)
4.5V, 10V
3V @ 1.45mA
10nC @ 4.5V
1680pF @ 10V
±20V
-
2W (Ta), 19W (Tc)
7.1 mOhm @ 8.5A, 10V
150°C (TJ)
Surface Mount
8-HSSO
8-SMD, Flat Lead
hot IRLI520NPBF
Infineon Technologies

MOSFET N-CH 100V 8.1A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad123.708
MOSFET (Metal Oxide)
100V
8.1A (Tc)
4V, 10V
2V @ 250µA
20nC @ 5V
440pF @ 25V
±16V
-
30W (Tc)
180 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
EPC2031ENGRT
EPC

MOSFET NCH 60V 31A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
package: Die
Voorraad55.554
GaNFET (Gallium Nitride)
60V
31A (Ta)
5V
2.5V @ 15mA
17nC @ 5V
1800pF @ 300V
+6V, -4V
-
-
2.6 mOhm @ 30A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
BSC046N02KSGAUMA1
Infineon Technologies

MOSFET N-CH 20V 19A/80A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
package: -
Voorraad59.685
MOSFET (Metal Oxide)
20 V
19A (Ta), 80A (Tc)
2.5V, 4.5V
1.2V @ 110µA
27.6 nC @ 4.5 V
4100 pF @ 10 V
±12V
-
2.8W (Ta), 48W (Tc)
4.6mOhm @ 50A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IPB054N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 58µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad7.014
MOSFET (Metal Oxide)
60 V
80A (Tc)
10V
4V @ 58µA
82 nC @ 10 V
6600 pF @ 30 V
±20V
-
115W (Tc)
5.4mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD50P04P4L11ATMA2
Infineon Technologies

MOSFET P-CH 40V 50A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 58W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad17.070
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.2V @ 85µA
59 nC @ 10 V
3900 pF @ 25 V
+5V, -16V
-
58W (Tc)
10.6mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY14N60X2
IXYS

MOSFET N-CH 600V 14A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad150
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V
4.5V @ 250µA
16.7 nC @ 10 V
740 pF @ 25 V
±30V
-
180W (Tc)
250mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIRA74DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 24A/81.2A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad44.340
MOSFET (Metal Oxide)
40 V
24A (Ta), 81.2A (Tc)
4.5V, 10V
2.4V @ 250µA
41 nC @ 10 V
2000 pF @ 20 V
+20V, -16V
-
4.1W (Ta), 46.2W (Tc)
4.2mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIB4316EDK-T1-GE3
Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 10W (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-75-6
  • Package / Case: PowerPAK® SC-75-6
package: -
Voorraad26.865
MOSFET (Metal Oxide)
30 V
4.5A (Ta), 6A (Tc)
2.5V, 10V
1.4V @ 250µA
12 nC @ 10 V
-
±12V
-
1.9W (Ta), 10W (Tc)
57mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-75-6
PowerPAK® SC-75-6
FDB4030L
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Tc)
10V
2V @ 250µA
18 nC @ 10 V
365 pF @ 15 V
±20V
-
37.5W (Tc)
55mOhm @ 4.5A, 10V
-65°C ~ 175°C (TJ)
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMN48XPA2X
Nexperia USA Inc.

MOSFET P-CH 20V 4.4A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 49mOhm @ 4.4A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
package: -
Voorraad17.892
MOSFET (Metal Oxide)
20 V
4.4A (Ta)
2.5V, 8V
1.3V @ 250µA
10 nC @ 4.5 V
679 pF @ 10 V
±12V
-
660mW (Ta), 7.5W (Tc)
49mOhm @ 4.4A, 8V
-55°C ~ 175°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
NP80N03MLE-S18-AY
Renesas Electronics Corporation

MOSFET N-CH 30V 80A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
80A (Tc)
-
2.5V @ 250µA
72 nC @ 10 V
3900 pF @ 25 V
-
-
1.8W (Ta), 120W (Tc)
7mOhm @ 40A, 10V
175°C (TJ)
Through Hole
TO-220
TO-220-3