Pagina 490 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  490/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRLL2703TR
Infineon Technologies

MOSFET N-CH 30V 3.9A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad6.976
MOSFET (Metal Oxide)
30V
3.9A (Ta)
4V, 10V
2.4V @ 250µA
14nC @ 5V
530pF @ 25V
±16V
-
1W (Ta)
45 mOhm @ 3.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
BUK7511-55B,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2604pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad2.480
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 1mA
37nC @ 10V
2604pF @ 25V
±20V
-
157W (Tc)
11 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FQI2N30TU
Fairchild/ON Semiconductor

MOSFET N-CH 300V 2.1A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 1.05A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad2.656
MOSFET (Metal Oxide)
300V
2.1A (Tc)
10V
5V @ 250µA
5nC @ 10V
130pF @ 25V
±30V
-
3.13W (Ta), 40W (Tc)
3.7 Ohm @ 1.05A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
FQI2P25TU
Fairchild/ON Semiconductor

MOSFET P-CH 250V 2.3A I2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad6.400
MOSFET (Metal Oxide)
250V
2.3A (Tc)
10V
5V @ 250µA
8.5nC @ 10V
250pF @ 25V
±30V
-
3.13W (Ta), 52W (Tc)
4 Ohm @ 1.15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot PMF400UN,115
NXP

MOSFET N-CH 30V 830MA SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 830mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 560mW (Tc)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323-3
  • Package / Case: SC-70, SOT-323
package: SC-70, SOT-323
Voorraad148.200
MOSFET (Metal Oxide)
30V
830mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.89nC @ 4.5V
43pF @ 25V
±8V
-
560mW (Tc)
480 mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323-3
SC-70, SOT-323
BUK9507-30B,127
Nexperia USA Inc.

MOSFET N-CH 30V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3373pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 157W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.336
MOSFET (Metal Oxide)
30V
75A (Tc)
4.5V, 10V
2V @ 1mA
32nC @ 5V
3373pF @ 25V
±15V
-
157W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SIHG17N60D-GE3
Vishay Siliconix

MOSFET N-CH 600V 17A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 277.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.040
MOSFET (Metal Oxide)
600V
17A (Tc)
10V
5V @ 250µA
90nC @ 10V
1780pF @ 100V
±30V
-
277.8W (Tc)
340 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
TK46A08N1,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 46A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad5.696
MOSFET (Metal Oxide)
80V
46A (Tc)
10V
4V @ 500µA
37nC @ 10V
2500pF @ 40V
±20V
-
35W (Tc)
8.4 mOhm @ 23A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack, Isolated Tab
DMPH6023SK3-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.600
MOSFET (Metal Oxide)
60V
35A (Tc)
4.5V, 10V
3V @ 250µA
53.1nC @ 10V
2569pF @ 30V
±20V
-
3.2W
33 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
FL6L52070L
Panasonic Electronic Components

MOSFET P-CH 20V 1A MINI6-F1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 540mW (Ta)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WSSMini6-F1
  • Package / Case: 6-SMD, Flat Leads
package: 6-SMD, Flat Leads
Voorraad4.464
MOSFET (Metal Oxide)
20V
1A (Ta)
2.5V, 4V
1.5V @ 1mA
-
80pF @ 10V
±12V
Schottky Diode (Isolated)
540mW (Ta)
420 mOhm @ 500mA, 4V
125°C (TJ)
Surface Mount
WSSMini6-F1
6-SMD, Flat Leads
SPD06N80C3ATMA1
Infineon Technologies

MOSFET N-CH 800V 6A 3TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.616
MOSFET (Metal Oxide)
800V
6A (Ta)
10V
3.9V @ 250µA
41nC @ 10V
785pF @ 100V
±20V
-
83W (Tc)
900 mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF9335TRPBF
Infineon Technologies

MOSFET P-CH 30V 5.4A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad632.724
MOSFET (Metal Oxide)
30V
5.4A (Ta)
4.5V, 10V
2.4V @ 10µA
14nC @ 10V
386pF @ 25V
±20V
-
2.5W (Ta)
59 mOhm @ 5.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot STB200NF03T4
STMicroelectronics

MOSFET N-CH 30V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad36.444
MOSFET (Metal Oxide)
30V
120A (Tc)
10V
4V @ 250µA
140nC @ 10V
4950pF @ 25V
±20V
-
300W (Tc)
3.6 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSL307SPH6327XTSA1
Infineon Technologies

MOSFET P-CH 30V 5.5A 6TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP-6-1
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad24.648
MOSFET (Metal Oxide)
30V
5.5A (Ta)
4.5V, 10V
2V @ 40µA
29nC @ 10V
805pF @ 25V
±20V
-
2W (Ta)
43 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSOP-6-1
SOT-23-6 Thin, TSOT-23-6
PHP20NQ20T,127
Nexperia USA Inc.

MOSFET N-CH 200V 20A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad29.412
MOSFET (Metal Oxide)
200V
20A (Tc)
10V
4V @ 1mA
65nC @ 10V
2470pF @ 25V
±20V
-
150W (Tc)
130 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 2A CST3B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.2V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 215 mOhm @ 1A, 8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3B
  • Package / Case: 3-SMD, No Lead
package: 3-SMD, No Lead
Voorraad85.272
MOSFET (Metal Oxide)
40V
2A (Ta)
1.8V, 8V
1.2V @ 1mA
1.1nC @ 4.2V
130pF @ 10V
±12V
-
1W (Ta)
215 mOhm @ 1A, 8V
150°C (TJ)
Surface Mount
CST3B
3-SMD, No Lead
2SK4087LS-MG5
onsemi

NCH 10V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
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NDH8436
onsemi

MOSFET N-CH 30V 5.8A SUPERSOT8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-8
  • Package / Case: 8-LSOP (0.130", 3.30mm Width)
package: -
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MOSFET (Metal Oxide)
30 V
5.8A (Ta)
-
2.8V @ 250µA
30 nC @ 10 V
560 pF @ 15 V
-
-
-
30mOhm @ 5.8A, 10V
-
Surface Mount
SuperSOT™-8
8-LSOP (0.130", 3.30mm Width)
AOD558
Alpha & Omega Semiconductor Inc.

30V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad6.444
MOSFET (Metal Oxide)
30 V
17A (Ta), 50A (Tc)
4.5V, 10V
2.4V @ 250µA
18 nC @ 10 V
1187 pF @ 15 V
±20V
-
2.5W (Ta), 50W (Tc)
5.4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
2N7002-13-F
Diodes Incorporated

DIODE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.23 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
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MOSFET (Metal Oxide)
60 V
170mA (Ta)
5V, 10V
2.5V @ 250µA
0.23 nC @ 4.5 V
50 pF @ 25 V
±20V
-
370mW (Ta)
5Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IXTA50N20P-TRL
IXYS

MOSFET N-CH 200V 50A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
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MOSFET (Metal Oxide)
200 V
50A (Tc)
10V
5V @ 250µA
70 nC @ 10 V
2720 pF @ 25 V
±20V
-
360W (Tc)
60mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
UF4C120070K4S
Qorvo

1200V/70MOHM, SIC, FAST CASCODE,

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4
package: -
Voorraad1.455
SiCFET (Cascode SiCJFET)
1200 V
27.5A (Tc)
-
6V @ 10mA
37.8 nC @ 15 V
1370 pF @ 800 V
±20V
-
217W (Tc)
91mOhm @ 20A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
PSMN1R6-30MLHX
Nexperia USA Inc.

MOSFET N-CH 30V 160A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2369 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
package: -
Voorraad15.426
MOSFET (Metal Oxide)
30 V
160A (Ta)
4.5V, 10V
2.2V @ 1mA
41 nC @ 10 V
2369 pF @ 15 V
±20V
-
106W (Ta)
1.9mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
PJA3433-AU_R1_000A1
Panjit International Inc.

SOT-23, MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad125.190
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
1.8V, 4.5V
1.3V @ 250µA
1.6 nC @ 4.5 V
125 pF @ 15 V
±8V
-
1.25W (Ta)
370mOhm @ 1.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
STL7LN65K5AG
STMicroelectronics

MOSFET N-CH 650V 5A PWRFLAT VHV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (5x6) VHV
  • Package / Case: 8-PowerVDFN
package: -
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MOSFET (Metal Oxide)
650 V
5A (Tc)
10V
5V @ 100µA
11.7 nC @ 10 V
270 pF @ 100 V
±30V
-
79W (Tc)
1.5Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) VHV
8-PowerVDFN
NVMFS6H818NLWFT1G
onsemi

MOSFET N-CH 80V 22A/135A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 190µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
  • Package / Case: 8-PowerTDFN, 5 Leads
package: -
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MOSFET (Metal Oxide)
80 V
22A (Ta), 135A (Tc)
4.5V, 10V
2V @ 190µA
64 nC @ 10 V
3844 pF @ 40 V
±20V
-
3.8W (Ta), 140W (Tc)
3.2mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
IPB025N10N3GATMA1
Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
package: -
Voorraad1.197
MOSFET (Metal Oxide)
100 V
180A (Tc)
6V, 10V
3.5V @ 275µA
206 nC @ 10 V
14800 pF @ 50 V
±20V
-
300W (Tc)
2.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
IXFB70N100X
IXYS

MOSFET N-CH 1000V 70A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1785W (Tc)
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264™
  • Package / Case: TO-264-3, TO-264AA
package: -
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MOSFET (Metal Oxide)
1000 V
70A (Tc)
10V
6V @ 8mA
350 nC @ 10 V
9160 pF @ 25 V
±30V
-
1785W (Tc)
89mOhm @ 35A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS264™
TO-264-3, TO-264AA