Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad17.700 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V SOT23
|
package: - |
Voorraad4.880 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 170V 260A TO-264
|
package: TO-264-3, TO-264AA |
Voorraad6.160 |
|
MOSFET (Metal Oxide) | 170V | 260A (Tc) | 10V | 5V @ 8mA | 400nC @ 10V | 24000pF @ 25V | ±20V | - | 1670W (Tc) | 6.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A SOP8 2-6J1B
|
package: 8-SOIC (0.173", 4.40mm Width) |
Voorraad6.496 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 34nC @ 10V | 1970pF @ 10V | ±20V | - | 1W (Ta) | 5.6 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad6.672 |
|
MOSFET (Metal Oxide) | 30V | 1.13A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 200pF @ 15V | ±20V | - | 400mW (Tj) | 200 mOhm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 30V 1.1A SOT23-3
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad794.544 |
|
MOSFET (Metal Oxide) | 30V | 1.1A (Ta) | 4.5V, 10V | 1V @ 250µA | 4.8nC @ 10V | 140pF @ 25V | ±20V | - | 625mW (Ta) | 350 mOhm @ 600mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 4A TO220FP
|
package: TO-220-3 Full Pack, Isolated Tab |
Voorraad10.272 |
|
MOSFET (Metal Oxide) | 200V | 4A (Tc) | 4V, 5V | 2V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±10V | - | 30W (Tc) | 800 mOhm @ 2.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 75V 70A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad4.384 |
|
MOSFET (Metal Oxide) | 75V | 78A (Tc) | 10V | 4V @ 250µA | 76nC @ 10V | 5015pF @ 25V | ±20V | - | 125W (Tc) | 11 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 200V 18A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad216.000 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 940pF @ 25V | ±20V | - | 90W (Tc) | 125 mOhm @ 10A, 10V | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 600V 23A ISOPLUS247
|
package: ISOPLUS247? |
Voorraad3.360 |
|
MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 4.5V @ 4mA | 200nC @ 10V | 5100pF @ 25V | ±20V | - | 310W (Tc) | 250 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL
|
package: 8-PowerTDFN |
Voorraad2.416 |
|
MOSFET (Metal Oxide) | 40V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 35nC @ 10V | 2100pF @ 20V | ±20V | - | 3.7W (Ta), 68W (Tc) | 2.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad2.064 |
|
MOSFET (Metal Oxide) | 30V | 5.5A (Tc) | 2.5V, 4.5V | 900mV @ 250µA | 8.9nC @ 4.5V | 792pF @ 15V | ±12V | - | 1.8W (Tc) | 32 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 300V 120A TO-247
|
package: TO-247-3 |
Voorraad4.416 |
|
MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 5V @ 4mA | 150nC @ 10V | 8630pF @ 25V | ±20V | - | 1130W (Tc) | 27 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 12V 2.5A TUMT6
|
package: 6-SMD, Flat Leads |
Voorraad3.264 |
|
MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 13nC @ 4.5V | 1350pF @ 6V | ±10V | - | 1W (Ta) | 61 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 200V 26A TO-220FP
|
package: TO-220-3 Full Pack |
Voorraad6.588 |
|
MOSFET (Metal Oxide) | 200V | 26A (Tc) | 10V | 5V @ 250µA | 110nC @ 10V | 4600pF @ 25V | ±30V | - | 46W (Tc) | 25 mOhm @ 17A, 10V | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 150V 26A PPAK SO-8
|
package: PowerPAK? SO-8 |
Voorraad25.968 |
|
MOSFET (Metal Oxide) | 150V | 26A (Tc) | 8V, 10V | 4.5V @ 250µA | 43nC @ 10V | 1735pF @ 50V | ±20V | - | 5.2W (Ta), 64W (Tc) | 45 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
IXYS |
MOSFET P-CH 100V 52A TO-263
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad17.112 |
|
MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 2845pF @ 25V | ±20V | - | 300W (Tc) | 50 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 1.2A SOT-23-3
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad504.420 |
|
MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | ±20V | - | 540mW (Ta) | 250 mOhm @ 910mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX
|
package: DirectFET? Isometric MX |
Voorraad172.800 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 3.9V @ 150µA | 212nC @ 10V | 6852pF @ 25V | ±20V | - | 96W (Tc) | 1.4 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
MOSLEADER |
N-Channel 30V 2.7A SOT-23-3
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
MOSLEADER |
P -20V SOT-23
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
|
package: - |
Voorraad5.940 |
|
MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | - | 4V @ 250µA | 11 nC @ 10 V | 300 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 200mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 2A (Tj) | 10V | 4V @ 250µA | 17 nC @ 10 V | 490 pF @ 25 V | ±30V | - | 23W (Tc) | 5Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 12V 15A 6UDFN
|
package: - |
Voorraad1.140 |
|
MOSFET (Metal Oxide) | 12 V | 15A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 47 nC @ 10 V | 2385 pF @ 6 V | ±8V | - | 2.1W (Ta) | 4.8mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2V, 4.5V | 1.2V @ 200µA | 7.5 nC @ 5 V | 590 pF @ 10 V | ±12V | Schottky Diode (Isolated) | 330mW (Ta) | 49mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
||
MOSLEADER |
N 20V 6.5A SOT-23N
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
SICFET N-CH 1.2KV 13A TO247-4
|
package: - |
Voorraad1.053 |
|
SiCFET (Silicon Carbide) | 1200 V | 13A (Tc) | 15V, 18V | 5.7V @ 1.6mA | 8.5 nC @ 18 V | 289 pF @ 800 V | +23V, -7V | - | 75W (Tc) | 220mOhm @ 4A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 9A TO252
|
package: - |
Voorraad7.380 |
|
MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 7V @ 1.38mA | 22 nC @ 15 V | 645 pF @ 100 V | ±30V | - | 125W (Tc) | 585mOhm @ 4.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |