Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3
|
package: TO-220-3 |
Voorraad2.608 |
|
MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 4V @ 90µA | 31nC @ 10V | 1820pF @ 75V | ±20V | - | 150W (Tc) | 20 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
|
package: TO-261-4, TO-261AA |
Voorraad6.912 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 4V @ 1mA | - | 550pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 75V 180A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad37.668 |
|
MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | - | 330W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad390.240 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 500V 16A
|
package: TO-220-3 Full Pack |
Voorraad6.352 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | - | 46.6nC @ 10V | 1200pF @ 30V | ±30V | - | 2W (Ta), 40W (Tc) | 430 mOhm @ 8A, 10V | 150°C (TJ) | Through Hole | TO-220F-3FS | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 20V 2.9A SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad288.600 |
|
MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 13nC @ 4.5V | 715pF @ 6V | ±8V | - | 710mW (Ta) | 57 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Panasonic Electronic Components |
MOSFET N-CH 80V 0.5A MINIP-3
|
package: TO-243AA |
Voorraad2.576 |
|
MOSFET (Metal Oxide) | 80V | 500mA (Ta) | 10V | 3.5V @ 1mA | - | 45pF @ 10V | 20V | - | 1W (Ta) | 4 Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | MiniP3-F2 | TO-243AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 12V 11A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad120.084 |
|
MOSFET (Metal Oxide) | 12V | 11A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 47nC @ 4.5V | 4750pF @ 6V | ±8V | - | 3W (Ta) | 16 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 9A TO-220
|
package: TO-220-3 |
Voorraad5.920 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 5V | 2V @ 250µA | 27nC @ 5V | 755pF @ 25V | ±20V | - | 69W (Tc) | 400 mOhm @ 4.5A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 8.8A 8-SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad423.420 |
|
MOSFET (Metal Oxide) | 20V | 8.8A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 70nC @ 4.5V | 3640pF @ 16V | ±12V | - | 1.6W (Ta) | 14 mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N CH 150V 99A TO262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad7.200 |
|
MOSFET (Metal Oxide) | 150V | 99A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 5270pF @ 50V | ±20V | - | 375W (Tc) | 12.1 mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 43.4A TO220AB
|
package: TO-220-3 |
Voorraad6.144 |
|
MOSFET (Metal Oxide) | 30V | 43.4A (Tc) | 4.5V, 10V | 2V @ 250µA | 18.5nC @ 10V | 690pF @ 25V | ±20V | - | 57.6W (Tc) | 17 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
package: TO-220-3 |
Voorraad3.232 |
|
MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 955pF @ 25V | ±30V | - | 38.7W (Tc) | 4 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 97A TO-262
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad14.856 |
|
MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 4V @ 150µA | 120nC @ 10V | 4820pF @ 50V | ±20V | - | 230W (Tc) | 9 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 40V 270A POWERSO-10
|
package: PowerSO-10 Exposed Bottom Pad |
Voorraad77.532 |
|
MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7500pF @ 25V | ±20V | - | 300W (Tc) | 1.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 22A TO-3PN
|
package: TO-3P-3, SC-65-3 |
Voorraad6.656 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 1950pF @ 100V | ±30V | - | 205W (Tc) | 165 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 2.5A SSOT23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad3.632 |
|
MOSFET (Metal Oxide) | 60V | 2.8A (Tc) | 10V | 2.5V @ 250µA | 12nC @ 10V | 550pF @ 30V | ±20V | - | 2W (Tc) | 177 mOhm @ 2.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad40.740 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 13 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 25V 5.8A SOT23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad1.650.780 |
|
MOSFET (Metal Oxide) | 25V | 5.8A (Ta) | 4.5V, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | ±20V | - | 1.25W (Ta) | 24 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Taiwan Semiconductor Corporation |
40V, 100A, SINGLE N-CHANNEL POWE
|
package: - |
Voorraad15.000 |
|
MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 95 nC @ 10 V | 6228 pF @ 25 V | ±16V | - | 136W (Tc) | 2.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 110A PLUS220
|
package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
2N7002 FAMILY SOT23 T&R 3K
|
package: - |
Voorraad9.000 |
|
MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | 5V, 10V | 2.5V @ 1mA | 0.3 nC @ 4.5 V | 50 pF @ 25 V | ±20V | - | 370mW (Ta) | 2Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO247-3
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | 11659 pF @ 400 V | ±30V | - | 446W (Tc) | 22mOhm @ 58.2A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-31 | TO-247-3 |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -4.7A, -20
|
package: - |
Voorraad17.850 |
|
MOSFET (Metal Oxide) | 20 V | 4.7A (Tc) | 1.8V, 4.5V | - | 13 nC @ 4.5 V | 1230 pF @ 10 V | ±10V | - | 1.56W (Tc) | 50mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 21A (Ta), 115A (Tc) | 10V | 4V @ 250µA | 66 nC @ 10 V | 4327 pF @ 50 V | ±20V | - | 4.7W (Ta), 136W (Tc) | 4.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 30V 11A 8SOP
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 11A (Ta) | - | - | 6.8 nC @ 4.5 V | 1010 pF @ 10 V | - | - | - | 11.7mOhm @ 5.5A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6
|
package: - |
Voorraad4.011 |
|
MOSFET (Metal Oxide) | 30 V | 3A (Ta) | 4V, 10V | 2.5V @ 1mA | 6 nC @ 5 V | 440 pF @ 10 V | ±20V | - | 950mW (Ta) | 80mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |