Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 116A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.688 |
|
MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 3V @ 250µA | 60nC @ 4.5V | 3290pF @ 25V | ±16V | - | 3.8W (Ta), 180W (Tc) | 7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 14A PPAK SO-8
|
package: PowerPAK? SO-8 |
Voorraad13.536 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 3V @ 250µA | 180nC @ 10V | - | ±20V | - | 1.9W (Ta) | 5.7 mOhm @ 24A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
IXYS |
MOSFET N-CH 300V 52A PLUS220
|
package: TO-220-3, Short Tab |
Voorraad7.184 |
|
MOSFET (Metal Oxide) | 300V | 52A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3490pF @ 25V | ±20V | - | 400W (Tc) | 66 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
ON Semiconductor |
MOSFET N-CH 30V 8.6A IPAK
|
package: TO-251-3 Stub Leads, IPak |
Voorraad180.000 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 11nC @ 4.5V | 1350pF @ 12V | ±20V | - | 1.4W (Ta), 50W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET P-CH 30V 50A TO220AB
|
package: TO-220-3 |
Voorraad438.000 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V | 2V @ 250µA | 100nC @ 5V | 4900pF @ 25V | ±15V | - | 125W (Tc) | 25 mOhm @ 25A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 21A TO-247AC
|
package: TO-247-3 |
Voorraad4.288 |
|
MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 180W (Tc) | 200 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 800V 4A I2PAKFP
|
package: TO-262-3 Full Pack, I2Pak |
Voorraad7.568 |
|
MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 5V @ 100µA | 5.5nC @ 10V | 177pF @ 100V | ±30V | - | 20W (Tc) | 1.75 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Infineon Technologies |
HIGH POWER_LEGACY
|
package: - |
Voorraad7.200 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 20V 120A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad119.004 |
|
MOSFET (Metal Oxide) | 20V | 120A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 31nC @ 4.5V | 2830pF @ 10V | ±20V | - | 89W (Tc) | 4 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 200V 105A ISOPLUS247
|
package: ISOPLUS247? |
Voorraad6.048 |
|
MOSFET (Metal Oxide) | 200V | 105A (Tc) | 10V | 4V @ 8mA | 360nC @ 10V | 9100pF @ 25V | ±20V | - | 417W (Tc) | 17 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Microsemi Corporation |
MOSFET N-CH 600V 77A D3PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad3.424 |
|
MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 3.6V @ 2.96mA | 260nC @ 10V | 13600pF @ 25V | ±20V | Super Junction | 481W (Tc) | 41 mOhm @ 44.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET P-CH 100V 57A ISOPLUS247
|
package: ISOPLUS247? |
Voorraad2.544 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 5800pF @ 25V | ±20V | - | 190W (Tc) | 27 mOhm @ 45A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
IXYS |
MOSFET N-CH 500V 98A TO264
|
package: TO-264-3, TO-264AA |
Voorraad6.560 |
|
MOSFET (Metal Oxide) | 500V | 98A (Tc) | 10V | 5V @ 8mA | 197nC @ 10V | 13100pF @ 25V | ±30V | - | 1300W (Tc) | 50 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 6.2A SSOT-6
|
package: SOT-23-6 Thin, TSOT-23-6 |
Voorraad226.572 |
|
MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 16nC @ 4.5V | 1125pF @ 10V | ±8V | - | 1.6W (Ta) | 24 mOhm @ 6.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 500V 24A TO-247AD
|
package: TO-247-3 |
Voorraad4.032 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 4V @ 4mA | 160nC @ 10V | 4200pF @ 25V | ±20V | - | 300W (Tc) | 230 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 24A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad6.336 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 41.5nC @ 10V | 1790pF @ 100V | ±25V | - | 190W (Tc) | 140 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 65A TO-220AB
|
package: TO-220-3 |
Voorraad7.232 |
|
MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | ±30V | - | 330W (Tc) | 24 mOhm @ 46A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 60V 35A/230A 5DFN
|
package: - |
Voorraad7.695 |
|
MOSFET (Metal Oxide) | 60 V | 35A (Ta), 230A (Tc) | - | 4V @ 250µA | 60.2 nC @ 10 V | 4830 pF @ 25 V | ±20V | - | 3.8W (Ta), 170W (Tc) | 1.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Rohm Semiconductor |
750V, 31A, 7-PIN SMD, TRENCH-STR
|
package: - |
Voorraad2.967 |
|
SiCFET (Silicon Carbide) | 750 V | 31A (Tc) | 18V | 4.8V @ 8.89mA | 63 nC @ 18 V | 1460 pF @ 500 V | +21V, -4V | - | 93W | 59mOhm @ 17A, 18V | 175°C (TJ) | Surface Mount | TO-263-7L | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Infineon Technologies |
MOSFET N-CH 700V 6A TO220
|
package: - |
Voorraad1.500 |
|
MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 4.5V @ 200µA | 22 nC @ 10 V | 615 pF @ 100 V | ±20V | - | 27.8W (Tc) | 660mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13.4A (Tc) | 10V | 5V @ 750µA | 84 nC @ 10 V | 1820 pF @ 25 V | ±20V | - | 156W (Tc) | 330mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2PAK, TO-262AA |
||
YAGEO XSEMI |
MOSFET P-CH 30V 12.7A PMPAK
|
package: - |
Voorraad3.000 |
|
MOSFET (Metal Oxide) | 30 V | 12.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 64 nC @ 10 V | 3360 pF @ 15 V | ±20V | - | 3.13W (Ta) | 13.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 3 x 3 | 8-PowerDFN |
||
IXYS |
MOSFET N-CH 1500V 4A TO263HV
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 5V @ 250µA | 44.5 nC @ 10 V | 1576 pF @ 25 V | ±30V | - | 280W (Tc) | 6Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
E SERIES POWER MOSFET SUPER-247,
|
package: - |
Voorraad699 |
|
MOSFET (Metal Oxide) | 650 V | 87A (Tc) | 10V | 4V @ 250µA | 591 nC @ 10 V | 11826 pF @ 100 V | ±30V | - | 625W (Tc) | 29mOhm @ 45A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V X2-DFN1006-
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 400mA (Ta) | 1.5V, 4.5V | 1V @ 250µA | 0.3 nC @ 4.5 V | 17 pF @ 15 V | ±8V | - | 460mW (Ta) | 1.9Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
||
EPC |
TRANS GAN 80V .0033OHM 6LGA
|
package: - |
Voorraad57.309 |
|
GaNFET (Gallium Nitride) | 100 V | 29A (Ta) | 5V | 2.5V @ 5.5mA | 8.3 nC @ 5 V | 1180 pF @ 50 V | +6V, -4V | - | - | 3.3mOhm @ 16A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TDSON-8
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 6V, 10V | 1.9V @ 105µA | 43.2 nC @ 10 V | 3190 pF @ 15 V | ±25V | - | 69W (Ta) | 8.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 25A TO220FP
|
package: - |
Voorraad1.815 |
|
MOSFET (Metal Oxide) | 600 V | 25A (Tc) | 10V | 4.75V @ 250µA | 35 nC @ 10 V | 1500 pF @ 100 V | ±25V | - | 35W (Tc) | 128mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |