Pagina 160 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  160/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SPB80N06S2-05
Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.828
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 250µA
170nC @ 10V
6790pF @ 25V
±20V
-
300W (Tc)
4.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR4105ZTRR
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad5.008
MOSFET (Metal Oxide)
55V
30A (Tc)
10V
4V @ 250µA
27nC @ 10V
740pF @ 25V
±20V
-
48W (Tc)
24.5 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AOD518
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 951pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad351.888
MOSFET (Metal Oxide)
30V
15A (Ta), 54A (Tc)
4.5V, 10V
2.6V @ 250µA
22.5nC @ 10V
951pF @ 15V
±20V
-
2.5W (Ta), 50W (Tc)
8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6.1A VS6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad6.688
MOSFET (Metal Oxide)
60V
6.1A (Ta)
4.5V, 10V
2.3V @ 100µA
12nC @ 10V
830pF @ 10V
±20V
-
700mW (Ta)
59 mOhm @ 3.1A, 10V
150°C (TJ)
Surface Mount
VS-6 (2.9x2.8)
SOT-23-6 Thin, TSOT-23-6
SUM90N08-7M6P-E3
Vishay Siliconix

MOSFET N-CH 75V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.272
MOSFET (Metal Oxide)
75V
90A (Tc)
10V
4.8V @ 250µA
90nC @ 10V
3528pF @ 30V
±20V
-
3.75W (Ta), 150W (Tc)
7.6 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN5L06T-7
Diodes Incorporated

MOSFET N-CH 50V 280MA SOT-523

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
package: SOT-523
Voorraad7.344
MOSFET (Metal Oxide)
50V
280mA (Ta)
1.8V, 2.7V
1.2V @ 250µA
-
50pF @ 25V
±20V
-
150mW (Ta)
3 Ohm @ 200mA, 2.7V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
hot NTTD4401FR2
ON Semiconductor

MOSFET P-CH 20V 2.4A 8MICRO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
  • Vgs (Max): ±10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 780mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Voorraad11.280
MOSFET (Metal Oxide)
20V
2.4A (Ta)
2.5V, 4.5V
1.5V @ 250µA
18nC @ 4.5V
750pF @ 16V
±10V
Schottky Diode (Isolated)
780mW (Ta)
90 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro8?
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRFIB41N15DPBF
Infineon Technologies

MOSFET N-CH 150V 41A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad6.992
MOSFET (Metal Oxide)
150V
41A (Tc)
10V
5.5V @ 250µA
110nC @ 10V
2520pF @ 25V
±20V
-
48W (Tc)
45 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
IPAW70R600CEXKSA1
Infineon Technologies

MOSFET N-CH 700V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO252
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad2.368
MOSFET (Metal Oxide)
700V
10.5A (Tc)
10V
3.5V @ 210µA
22nC @ 10V
474pF @ 100V
±20V
-
86W (Tc)
600 mOhm @ 1A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO252
TO-220-3 Full Pack
IXTY01N80
IXYS

MOSFET N-CH 800V 0.1A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad2.784
MOSFET (Metal Oxide)
800V
100mA (Tc)
10V
4.5V @ 25µA
8nC @ 10V
60pF @ 25V
±20V
-
25W (Tc)
50 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
SUD20N10-66L-GE3
Vishay Siliconix

MOSFET N-CH 100V 16.9A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 66 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.408
MOSFET (Metal Oxide)
100V
16.9A (Tc)
4.5V, 10V
3V @ 250µA
30nC @ 10V
860pF @ 50V
±20V
-
2.1W (Ta), 41.7W (Tc)
66 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
RCX510N25
Rohm Semiconductor

MOSFET N-CH 250V 51A TO-220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad20.088
MOSFET (Metal Oxide)
250V
51A (Ta)
10V
-
-
-
±30V
-
40W (Tc)
-
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
IXFR80N50Q3
IXYS

MOSFET N-CH 500V 50A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 570W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.408
MOSFET (Metal Oxide)
500V
50A (Tc)
10V
6.5V @ 8mA
200nC @ 10V
10000pF @ 25V
±30V
-
570W (Tc)
72 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
TO-247-3
2SJ652-1E
ON Semiconductor

MOSFET P-CH 60V 28A TO-220FP-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3SG
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad12.132
MOSFET (Metal Oxide)
60V
28A (Ta)
4V, 10V
-
80nC @ 10V
4360pF @ 20V
±20V
-
2W (Ta), 30W (Tc)
38 mOhm @ 14A, 10V
150°C (TJ)
Through Hole
TO-220F-3SG
TO-220-3 Full Pack
BSP92PH6327XTSA1
Infineon Technologies

MOSFET P-CH 250V 260MA 4SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad19.356
MOSFET (Metal Oxide)
250V
260mA (Ta)
2.8V, 10V
2V @ 130µA
5.4nC @ 10V
104pF @ 25V
±20V
-
1.8W (Ta)
12 Ohm @ 260mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
FDB8441_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.280
MOSFET (Metal Oxide)
40V
28A (Ta), 80A (Tc)
10V
4V @ 250µA
280nC @ 10V
15000pF @ 25V
±20V
-
300W (Tc)
2.5 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SI7129DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 35A 1212-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3345pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 14.4A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
package: PowerPAK? 1212-8
Voorraad61.956
MOSFET (Metal Oxide)
30V
35A (Tc)
4.5V, 10V
2.8V @ 250µA
71nC @ 10V
3345pF @ 15V
±20V
-
3.8W (Ta), 52.1W (Tc)
11.4 mOhm @ 14.4A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
STF17N62K3
STMicroelectronics

MOSFET N-CH 620V 15.0A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad21.744
MOSFET (Metal Oxide)
620V
15.5A (Tc)
10V
4.5V @ 100µA
105nC @ 10V
3100pF @ 50V
±30V
-
40W (Tc)
340 mOhm @ 7.5A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
STW78N65M5
STMicroelectronics

MOSFET N-CH 650V 69A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 203nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 34.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad11.172
MOSFET (Metal Oxide)
650V
69A (Tc)
10V
5V @ 250µA
203nC @ 10V
9000pF @ 100V
±25V
-
450W (Tc)
32 mOhm @ 34.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
IXFN360N15T2
IXYS

MOSFET N-CH 150V 310A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 310A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1070W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad19.572
MOSFET (Metal Oxide)
150V
310A
10V
5V @ 8mA
715nC @ 10V
47500pF @ 25V
±20V
-
1070W (Tc)
4 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
R6006KND3TL1
Rohm Semiconductor

MOSFET N-CH 600V 6A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad7.989
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
5.5V @ 1mA
12 nC @ 10 V
350 pF @ 25 V
±20V
-
70W (Tc)
830mOhm @ 3A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MS23N06A
Bruckewell

N-Channel MOSFET,30V,5.8A,SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Request a Quote
MOSFET (Metal Oxide)
-
5.8A (Ta)
-
1.2V @ 250µA
-
-
±12V
-
-
30mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
RJU003N03FRAT106
Rohm Semiconductor

MOSFET N-CH 30V 300MA UMT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323
package: -
Voorraad107.979
MOSFET (Metal Oxide)
30 V
300mA (Ta)
2.5V, 4.5V
1.5V @ 1mA
-
24 pF @ 10 V
±12V
-
200mW (Ta)
1.1Ohm @ 300mA, 4.5V
150°C (TJ)
Surface Mount
UMT3
SC-70, SOT-323
IPI80N04S3-06
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SI2300A
UMW

20V 6A 25MR@4.5V,6A 1V@50A N CHA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad7.803
MOSFET (Metal Oxide)
20 V
6A (Ta)
2.5V, 4.5V
1V @ 50µA
10 nC @ 4.5 V
574 pF @ 10 V
±12V
-
-
25mOhm @ 6A, 4.5V
150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
DMP26M1UFG-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
package: -
Voorraad5.940
MOSFET (Metal Oxide)
20 V
71A (Tc)
1.5V, 4.5V
1V @ 250µA
164 nC @ 10 V
5392 pF @ 10 V
±10V
-
1.67W (Ta), 3W (Tc)
5.5mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
AO4290A
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 15.5A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
15.5A (Ta)
4.5V, 10V
2.3V @ 250µA
95 nC @ 10 V
4525 pF @ 50 V
±20V
-
3.1W (Ta)
6.4mOhm @ 15.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
LSIC1MO120G0160
Littelfuse Inc.

MOSFET SIC 1200V 14A TO247-4L

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 800 V
  • Vgs (Max): +22V, -6V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
package: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
20V
4V @ 5mA
50 nC @ 20 V
890 pF @ 800 V
+22V, -6V
-
125W (Tc)
200mOhm @ 10A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4