Pagina 1421 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.421/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPS06N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
package: TO-251-3 Stub Leads, IPak
Voorraad5.088
MOSFET (Metal Oxide)
25V
50A (Tc)
4.5V, 10V
2V @ 40µA
22nC @ 5V
2653pF @ 15V
±20V
-
83W (Tc)
5.9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
hot IRFS23N20D
Infineon Technologies

MOSFET N-CH 200V 24A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad657.552
MOSFET (Metal Oxide)
200V
24A (Tc)
10V
5.5V @ 250µA
86nC @ 10V
1960pF @ 25V
±30V
-
3.8W (Ta), 170W (Tc)
100 mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ44ESTRR
Infineon Technologies

MOSFET N-CH 60V 48A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.816
MOSFET (Metal Oxide)
60V
48A (Tc)
10V
4V @ 250µA
60nC @ 10V
1360pF @ 25V
±20V
-
110W (Tc)
23 mOhm @ 29A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB30N20
ON Semiconductor

MOSFET N-CH 200V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 81 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad390.000
MOSFET (Metal Oxide)
200V
30A (Ta)
10V
4V @ 250µA
100nC @ 10V
2335pF @ 25V
±30V
-
2W (Ta), 214W (Tc)
81 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STP95N04
STMicroelectronics

MOSFET N-CH 40V 80A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad407.808
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
54nC @ 10V
2200pF @ 25V
±20V
-
110W (Tc)
6.5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STT3PF20V
STMicroelectronics

MOSFET P-CH 20V 2.2A SOT23-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-6
  • Package / Case: SOT-23-6
package: SOT-23-6
Voorraad1.139.784
MOSFET (Metal Oxide)
20V
2.2A (Tc)
2.7V, 4.5V
600mV @ 250µA
4.7nC @ 4.5V
315pF @ 15V
±12V
-
1.6W (Tc)
200 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
BSP125H6433XTMA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad7.088
MOSFET (Metal Oxide)
600V
120mA (Ta)
4.5V, 10V
2.3V @ 94µA
6.6nC @ 10V
150pF @ 25V
±20V
-
1.8W (Ta)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IXKC25N80C
IXYS

MOSFET N-CH 800V 25A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
package: ISOPLUS220?
Voorraad4.576
MOSFET (Metal Oxide)
800V
25A (Tc)
10V
4V @ 2mA
180nC @ 10V
4600pF @ 25V
±20V
Super Junction
-
150 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
NVMFS5885NLWFT3G
ON Semiconductor

MOSFET N-CH 60V 39A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad4.896
MOSFET (Metal Oxide)
60V
10.2A (Ta)
4.5V, 10V
2.5V @ 250µA
21nC @ 10V
1340pF @ 25V
±20V
-
3.7W (Ta), 54W (Tc)
15 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot AOD458
Alpha & Omega Semiconductor Inc.

MOSFET N CH 250V 14A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 7A, 10V
  • Operating Temperature: -50°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad34.920
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
4.5V @ 250µA
15nC @ 10V
770pF @ 25V
±30V
-
150W (Tc)
280 mOhm @ 7A, 10V
-50°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
TSM4NB60CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: TO-220-3 Full Pack, Isolated Tab
Voorraad2.960
MOSFET (Metal Oxide)
600V
4A (Tc)
10V
4.5V @ 250µA
14.5nC @ 10V
500pF @ 25V
±30V
-
50W (Tc)
2.5 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220
TO-220-3 Full Pack, Isolated Tab
FDMC86262P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 2A POWER33

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 885pF @ 75V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 307 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
package: 8-PowerWDFN
Voorraad5.408
MOSFET (Metal Oxide)
150V
2A (Ta), 8.4A (Tc)
6V, 10V
4V @ 250µA
13nC @ 10V
885pF @ 75V
±25V
-
2.3W (Ta), 40W (Tc)
307 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
FCU3400N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad16.128
MOSFET (Metal Oxide)
800V
2A (Tc)
10V
4.5V @ 200µA
9.6nC @ 10V
400pF @ 100V
±20V
-
32W (Tc)
3.4 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
CEDM8001 TR
Central Semiconductor Corp

MOSFET P-CH 20V 0.1A SOT-883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V
  • Vgs (Max): 10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
package: SC-101, SOT-883
Voorraad5.616
MOSFET (Metal Oxide)
20V
100mA (Ta)
1.5V, 4V
1.1V @ 250µA
0.66nC @ 4.5V
45pF @ 3V
10V
-
100mW (Ta)
8 Ohm @ 10mA, 4V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
hot IRFP4332PBF
Infineon Technologies

MOSFET N-CH 250V 57A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 35A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.184
MOSFET (Metal Oxide)
250V
57A (Tc)
10V
5V @ 250µA
150nC @ 10V
5860pF @ 25V
±30V
-
360W (Tc)
33 mOhm @ 35A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
hot RSD220N06TL
Rohm Semiconductor

MOSFET N-CH 60V 22A SOT428

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad115.104
MOSFET (Metal Oxide)
60V
22A (Ta)
4V, 10V
-
-
-
±20V
-
20W (Ta)
-
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STW47NM60ND
STMicroelectronics

MOSFET N-CH 600V 35A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.696
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
5V @ 250µA
120nC @ 10V
4200pF @ 50V
±25V
-
255W (Tc)
88 mOhm @ 17.5A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SSM6K819R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET, 100 V, 10 A, 0.0258

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
package: -
Voorraad459
MOSFET (Metal Oxide)
100 V
10A (Ta)
4.5V, 10V
2.5V @ 100µA
8.5 nC @ 4.5 V
1110 pF @ 15 V
±20V
-
1.5W (Ta)
25.8mOhm @ 4A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
IPP055N08NF2SAKMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 55µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Voorraad1.089
MOSFET (Metal Oxide)
80 V
18.5A (Ta), 99A (Tc)
6V, 10V
3.8V @ 55µA
54 nC @ 10 V
2500 pF @ 40 V
±20V
-
3.8W (Ta), 107W (Tc)
5.5mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
SIRA90DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 100A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad10.965
MOSFET (Metal Oxide)
30 V
100A (Tc)
4.5V, 10V
2V @ 250µA
153 nC @ 10 V
10180 pF @ 15 V
+20V, -16V
-
104W (Tc)
0.8mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIHH180N60E-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 19A PPAK 8 X 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
19A (Tc)
10V
5V @ 250µA
33 nC @ 10 V
1085 pF @ 100 V
±30V
-
114W (Tc)
180mOhm @ 9.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
2SK3714-0-S12-AZ
Renesas

2SK3714 - SWITCHING N-CHANNEL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: MP-45F
  • Package / Case: TO-220-3 Isolated Tab
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
50A (Tc)
4V, 10V
2.5V @ 1mA
60 nC @ 10 V
3200 pF @ 10 V
±20V
-
2W (Ta), 35W (Tc)
13mOhm @ 25A, 10V
150°C
Through Hole
MP-45F
TO-220-3 Isolated Tab
RJJ0621DPP-E0-T2
Renesas

RJJ0621DPP - P CHANNEL SINGLE P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
25A (Tc)
4.5V, 10V
2.5V @ 1mA
-
1550 pF @ 10 V
+10V, -20V
-
35W (Tc)
56mOhm @ 12.5A, 10V
-55°C ~ 150°C
Through Hole
TO-220FP
TO-220-3 Full Pack
AOT280A60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 14A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V
3.6V @ 250µA
23.5 nC @ 10 V
1350 pF @ 100 V
±20V
-
156W (Tc)
280mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
RSS070N05TB1
Rohm Semiconductor

MOSFET N-CH 45V 7A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4.5V, 10V
2.5V @ 1mA
16.8 nC @ 5 V
1000 pF @ 10 V
±20V
-
2W (Ta)
25mOhm @ 7A, 10V
150°C
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
IXFA80N25X3-TRL
IXYS

MOSFET N-CH 250V 80A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad4.815
MOSFET (Metal Oxide)
250 V
80A (Tc)
10V
4.5V @ 1.5mA
83 nC @ 10 V
5430 pF @ 25 V
±20V
-
390W (Tc)
16mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SMBF1026LT1G
onsemi

NFET SOT23 SPCL 60V TR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXTA20N65X-TRL
IXYS

MOSFET N-CH 650V 20A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5.5V @ 250µA
35 nC @ 10 V
1390 pF @ 25 V
±30V
-
320W (Tc)
210mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB