Pagina 1415 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.415/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRFR13N20DCTRLP
Infineon Technologies

MOSFET N-CH 200V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.808
MOSFET (Metal Oxide)
200V
13A (Tc)
10V
5.5V @ 250µA
38nC @ 10V
830pF @ 25V
±30V
-
110W (Tc)
235 mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
APT23F60S
Microsemi Corporation

MOSFET N-CH 600V 23A D3PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 415W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Voorraad5.008
MOSFET (Metal Oxide)
600V
24A (Tc)
10V
5V @ 1mA
110nC @ 10V
4415pF @ 25V
±30V
-
415W (Tc)
290 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D3Pak
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot SI7402DN-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 13A PPAK 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
package: PowerPAK? 1212-8
Voorraad99.000
MOSFET (Metal Oxide)
12V
13A (Ta)
1.8V, 4.5V
850mV @ 250µA
55nC @ 4.5V
-
±8V
-
1.5W (Ta)
5.7 mOhm @ 20A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot CSD25303W1015
Texas Instruments

MOSFET P-CH 20V 3A 6DSBGA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DSBGA (1x1.5)
  • Package / Case: 6-UFBGA, DSBGA
package: 6-UFBGA, DSBGA
Voorraad36.000
MOSFET (Metal Oxide)
20V
3A (Tc)
1.8V, 4.5V
1V @ 250µA
4.3nC @ 4.5V
435pF @ 10V
±8V
-
1.5W (Ta)
58 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-DSBGA (1x1.5)
6-UFBGA, DSBGA
hot NTB5426NT4G
ON Semiconductor

MOSFET N-CH 60V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 215W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad12.936
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 250µA
170nC @ 10V
5800pF @ 25V
±20V
-
215W (Tc)
6 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTH220N055T
IXYS

MOSFET N-CH 55V 220A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.488
MOSFET (Metal Oxide)
55V
220A (Tc)
10V
4V @ 250µA
158nC @ 10V
7200pF @ 25V
±20V
-
430W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
hot ZXMN6A25K
Diodes Incorporated

MOSFET N-CH 60V 7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.11W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad38.208
MOSFET (Metal Oxide)
60V
7A (Ta)
4.5V, 10V
3V @ 250µA
20.4nC @ 10V
1063pF @ 30V
±20V
-
2.11W (Ta)
50 mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQU3N60TU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.4A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad40.800
MOSFET (Metal Oxide)
600V
2.4A (Tc)
10V
5V @ 250µA
13nC @ 10V
450pF @ 25V
±30V
-
2.5W (Ta), 50W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRF820
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad286.812
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
4V @ 250µA
24nC @ 10V
360pF @ 25V
±20V
-
50W (Tc)
3 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF300P226
Infineon Technologies

MOSFET IFX OPTIMOS TO247

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad7.104
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFE23N100
IXYS

MOSFET N-CH 1000V 21A ISOPLUS227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 21A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 430 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad3.440
MOSFET (Metal Oxide)
1000V
21A
10V
5V @ 8mA
250nC @ 10V
7000pF @ 25V
±20V
-
500W (Tc)
430 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
NVB5860NLT4G
ON Semiconductor

MOSFET N-CH 60V 169A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 220A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13216pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 283W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.000
MOSFET (Metal Oxide)
60V
220A (Ta)
4.5V, 10V
3V @ 250µA
220nC @ 10V
13216pF @ 25V
±20V
-
283W (Tc)
3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NDD60N745U1-1G
ON Semiconductor

MOSFET N-CH 600V 6.8A IPAK-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad3.232
MOSFET (Metal Oxide)
600V
6.6A (Tc)
10V
4V @ 250µA
15nC @ 10V
440pF @ 50V
±25V
-
84W (Tc)
745 mOhm @ 3.25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot AOTF9N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad52.428
MOSFET (Metal Oxide)
700V
9A (Tc)
10V
4.5V @ 250µA
35nC @ 10V
1630pF @ 25V
±30V
-
50W (Tc)
1.2 Ohm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
NVD3055-094T4G-VF01
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.592
MOSFET (Metal Oxide)
60V
12A (Ta)
10V
4V @ 250µA
20nC @ 10V
450pF @ 25V
±20V
-
1.5W (Ta), 48W (Tj)
94 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024PBF
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad28.812
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
CSD13201W10
Texas Instruments

MOSFET N-CH 12V 1.6A 4DSBGA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DSBGA (1x1)
  • Package / Case: 4-UFBGA, DSBGA
package: 4-UFBGA, DSBGA
Voorraad712.938
MOSFET (Metal Oxide)
12V
1.6A (Ta)
1.8V, 4.5V
1.1V @ 250µA
2.9nC @ 4.5V
462pF @ 6V
±8V
-
1.2W (Ta)
34 mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
4-DSBGA (1x1)
4-UFBGA, DSBGA
PMV45EN2R
Nexperia USA Inc.

MOSFET N-CH 30V SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 510mW (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB (SOT23)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad354.420
MOSFET (Metal Oxide)
30V
4.1A (Ta)
4.5V, 10V
2V @ 250µA
6.3nC @ 10V
209pF @ 15V
±20V
-
510mW (Ta), 5W (Tc)
42 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB (SOT23)
TO-236-3, SC-59, SOT-23-3
NTH4L022N120M3S
onsemi

SIC MOS TO247-4L 22MOHM 1200V

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
  • Vgs (Max): +22V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 352W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
package: -
Request a Quote
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
18V
4.4V @ 20mA
151 nC @ 18 V
3175 pF @ 800 V
+22V, -10V
-
352W (Tc)
30mOhm @ 40A, 18V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
MCAC28P06Y-TP
Micro Commercial Co

P-CHANNEL MOSFET, DFN5060

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
package: -
Voorraad18.696
MOSFET (Metal Oxide)
60 V
28A
-
2.7V @ 250µA
19.3 nC @ 10 V
1050 pF @ 30 V
±20V
-
60W
40mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
TSM16ND50CI-C0G
Taiwan Semiconductor Corporation

MOSFET N-CH 500V 16A ITO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 59.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
package: -
Request a Quote
MOSFET (Metal Oxide)
500 V
16A (Tc)
10V
4.5V @ 250µA
53 nC @ 10 V
2551 pF @ 50 V
±30V
-
59.5W (Tc)
350mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220
TO-220-3 Full Pack, Isolated Tab
PJMH074N60FRCH_T0_00601
Panjit International Inc.

600V/ 74M / 53A/ FAST RECOVERY Q

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 53A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
package: -
Voorraad4.500
MOSFET (Metal Oxide)
600 V
53A
10V
-
84 nC @ 10 V
-
±30V
-
-
-
-
Through Hole
TO-247AD
TO-247-3
BUK6D20-40EX
Nexperia USA Inc.

BUK6D20-40E/SOT1220/SOT1220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
package: -
Voorraad8.700
MOSFET (Metal Oxide)
40 V
8A (Ta), 19A (Tc)
4.5V, 10V
2.7V @ 250µA
19 nC @ 10 V
582 pF @ 20 V
±20V
-
2.3W (Ta), 15W (Tc)
20mOhm @ 8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
IRFR210TRPBF-BE3
Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad23.655
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
-
4V @ 250µA
8.2 nC @ 10 V
140 pF @ 25 V
±20V
-
2.5W (Ta), 25W (Tc)
1.5Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK3278-E
Sanyo

2SK3278 - N-CHANNEL SILICON MOSF

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RRL025P03FRATR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A TUMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TUMT6
  • Package / Case: 6-SMD, Flat Leads
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.5A (Ta)
4V, 10V
2.5V @ 1mA
12 nC @ 10 V
480 pF @ 10 V
±20V
-
1W (Ta)
75mOhm @ 2.5A, 10V
150°C (TJ)
Surface Mount
TUMT6
6-SMD, Flat Leads
BSS110
onsemi

MOSFET P-CH 50V 170MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 170mA, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
package: -
Request a Quote
MOSFET (Metal Oxide)
50 V
170mA (Ta)
-
2V @ 1mA
-
40 pF @ 25 V
-
-
-
10Ohm @ 170mA, 10V
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
SIR572DP-T1-RE3
Vishay Siliconix

N-CHANNEL 150 V (D-S) MOSFET POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 59.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5.7W (Ta), 92.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad17.688
MOSFET (Metal Oxide)
150 V
14.8A (Ta), 59.7A (Tc)
7.5V, 10V
4V @ 250µA
54 nC @ 10 V
2733 pF @ 75 V
±20V
-
5.7W (Ta), 92.5W (Tc)
10.8mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8