Pagina 1411 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.411/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSP324L6327HTSA1
Infineon Technologies

MOSFET N-CH 400V 170MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad4.064
MOSFET (Metal Oxide)
400V
170mA (Ta)
4.5V, 10V
2.3V @ 94µA
5.9nC @ 10V
154pF @ 25V
±20V
-
1.8W (Ta)
25 Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IPI100P03P3L-04
Infineon Technologies

MOSFET P-CH 30V 100A TO262-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 475µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9300pF @ 25V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad5.136
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
2.1V @ 475µA
200nC @ 10V
9300pF @ 25V
+5V, -16V
-
200W (Tc)
4.3 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRFU3504Z
Infineon Technologies

MOSFET N-CH 40V 42A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad14.232
MOSFET (Metal Oxide)
40V
42A (Tc)
10V
4V @ 50µA
45nC @ 10V
1510pF @ 25V
±20V
-
90W (Tc)
9 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
GP1M010A080H
Global Power Technologies Group

MOSFET N-CH 800V 9.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad4.640
MOSFET (Metal Oxide)
800V
9.5A (Tc)
10V
4V @ 250µA
53nC @ 10V
2336pF @ 25V
±30V
-
290W (Tc)
1.05 Ohm @ 4.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
FDU6676AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 90A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2470pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
package: TO-251-3 Short Leads, IPak, TO-251AA
Voorraad2.432
MOSFET (Metal Oxide)
30V
90A (Ta)
4.5V, 10V
3V @ 250µA
64nC @ 10V
2470pF @ 15V
±20V
-
70W (Ta)
5.8 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
IXTA182N055T7
IXYS

MOSFET N-CH 55V 182A TO-263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7 (IXTA..7)
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Voorraad7.552
MOSFET (Metal Oxide)
55V
182A (Tc)
10V
4V @ 250µA
114nC @ 10V
4850pF @ 25V
±20V
-
360W (Tc)
5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-7 (IXTA..7)
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IRF2807ZSTRR
Vishay Siliconix

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 53A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.896
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 250µA
110nC @ 10V
3270pF @ 25V
±20V
-
170W (Tc)
9.4 mOhm @ 53A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA65R420CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 8.7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 31.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad6.304
MOSFET (Metal Oxide)
650V
8.7A (Tc)
10V
4.5V @ 340µA
32nC @ 10V
870pF @ 100V
±20V
-
31.2W (Tc)
420 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
AOWF11N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO262F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262F
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad5.792
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4.5V @ 250µA
37nC @ 10V
1990pF @ 25V
±30V
-
27.8W (Tc)
650 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262F
TO-262-3 Long Leads, I2Pak, TO-262AA
NTMFS4C56NT3G
ON Semiconductor

MOSFET N-CH 30V 69A SO8FL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad4.416
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot CSD18542KTT
Texas Instruments

MOSFET N-CH 60V 200A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DDPAK/TO-263-3
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Voorraad103.464
MOSFET (Metal Oxide)
60V
200A (Ta)
4.5V, 10V
2.2V @ 250µA
57nC @ 10V
5070pF @ 30V
±20V
-
250W (Tc)
4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DDPAK/TO-263-3
TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
hot IRFB3607PBF
Infineon Technologies

MOSFET N-CH 75V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad4.160
MOSFET (Metal Oxide)
75V
80A (Tc)
10V
4V @ 100µA
84nC @ 10V
3070pF @ 50V
±20V
-
140W (Tc)
9 mOhm @ 46A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDMS86252L
Fairchild/ON Semiconductor

MOSFET N-CH 150V 8-MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1335pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad4.336
MOSFET (Metal Oxide)
150V
4.4A (Ta)
4.5V, 10V
3V @ 250µA
21nC @ 10V
1335pF @ 75V
±20V
-
2.5W (Ta), 50W (Tc)
56 mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
hot SI3469DV-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 5A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.14W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
package: SOT-23-6 Thin, TSOT-23-6
Voorraad322.560
MOSFET (Metal Oxide)
20V
5A (Ta)
4.5V, 10V
3V @ 250µA
30nC @ 10V
-
±20V
-
1.14W (Ta)
30 mOhm @ 6.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
hot IRLML5203TRPBF
Infineon Technologies

MOSFET P-CH 30V 3A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad14.381.352
MOSFET (Metal Oxide)
30V
3A (Ta)
4.5V, 10V
2.5V @ 250µA
14nC @ 10V
510pF @ 25V
±20V
-
1.25W (Ta)
98 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot NTJS3151PT1G
ON Semiconductor

MOSFET P-CH 12V 2.7A SOT-363

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 12V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-88/SC70-6/SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
package: 6-TSSOP, SC-88, SOT-363
Voorraad1.881.084
MOSFET (Metal Oxide)
12V
2.7A (Ta)
1.8V, 4.5V
1.2V @ 100µA
8.6nC @ 4.5V
850pF @ 12V
±12V
-
625mW (Ta)
60 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-88/SC70-6/SOT-363
6-TSSOP, SC-88, SOT-363
MMDF6N02HDR2
onsemi

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
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IPN60R600PFD7SATMA1
Infineon Technologies

CONSUMER PG-SOT223-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
4.5V @ 80µA
8.5 nC @ 10 V
344 pF @ 400 V
±20V
-
7W (Tc)
600mOhm @ 1.7A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IQE022N06LM5CGSCATMA1
Infineon Technologies

OPTIMOS 5 POWER-TRANSISTOR 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 48µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHTFN-9
  • Package / Case: 9-PowerWDFN
package: -
Voorraad17.778
MOSFET (Metal Oxide)
60 V
24A (Ta), 151A (Tc)
4.5V, 10V
2.3V @ 48µA
53 nC @ 10 V
4420 pF @ 30 V
±20V
-
2.5W (Ta), 100W (Tc)
2.2mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-WHTFN-9
9-PowerWDFN
DMN2046U-7-ML
MOSLEADER

N 20V 3.4A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UPA2734GR-E2-AT
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK2260-O-TD-E
onsemi

NCH 10V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMTH4M95SPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SCT4018KW7TL
Rohm Semiconductor

1200V, 75A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 22.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4532 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 267W
  • Rds On (Max) @ Id, Vgs: 23.4mOhm @ 42A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
package: -
Voorraad2.820
SiCFET (Silicon Carbide)
1200 V
75A (Tj)
18V
4.8V @ 22.2mA
170 nC @ 18 V
4532 pF @ 800 V
+21V, -4V
-
267W
23.4mOhm @ 42A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FCHD040N65S3-F155
onsemi

MOSFET N-CH 650V 65A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
package: -
Voorraad102
MOSFET (Metal Oxide)
650 V
65A (Tc)
10V
4.5V @ 1.7mA
136 nC @ 10 V
4740 pF @ 400 V
±30V
-
417W (Tc)
40mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
CSD17318Q2T
Texas Instruments

MOSFET N-CHANNEL 30V 25A 6WSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
package: -
Voorraad9.261
MOSFET (Metal Oxide)
30 V
25A (Tc)
2.5V, 8V
1.2V @ 250µA
6 nC @ 4.5 V
879 pF @ 15 V
±10V
-
16W (Tc)
15.1mOhm @ 8A, 8V
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
DMN2053UQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: -
Voorraad9.000
MOSFET (Metal Oxide)
20 V
6.5A (Ta)
1.8V, 10V
1.2V @ 250µA
4.6 nC @ 4.5 V
414 pF @ 10 V
±12V
-
800mW (Ta)
29mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
MCMG66-TP
Micro Commercial Co

MOSFET P-CH 16V 5.8A DFN2020-6G

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16 V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020-6G
  • Package / Case: 6-WDFN Exposed Pad
package: -
Request a Quote
MOSFET (Metal Oxide)
16 V
5.8A (Ta)
2.5V, 4.5V
1V @ 250µA
7.8 nC @ 4.5 V
740 pF @ 4 V
±8V
-
1.7W (Ta)
45mOhm @ 4.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020-6G
6-WDFN Exposed Pad