Pagina 1383 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.383/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6713STR1PBF
Infineon Technologies

MOSFET N-CH 25V 22A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? SQ
  • Package / Case: DirectFET? Isometric SQ
package: DirectFET? Isometric SQ
Voorraad2.320
MOSFET (Metal Oxide)
25V
22A (Ta), 95A (Tc)
4.5V, 10V
2.4V @ 50µA
32nC @ 4.5V
2880pF @ 13V
±20V
-
2.2W (Ta), 42W (Tc)
3 mOhm @ 22A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? SQ
DirectFET? Isometric SQ
hot IRF6648TR1PBF
Infineon Technologies

MOSFET N-CH 60V 86A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MN
  • Package / Case: DirectFET? Isometric MN
package: DirectFET? Isometric MN
Voorraad192.336
MOSFET (Metal Oxide)
60V
86A (Tc)
10V
4.9V @ 150µA
50nC @ 10V
2120pF @ 25V
±20V
-
2.8W (Ta), 89W (Tc)
7 mOhm @ 17A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MN
DirectFET? Isometric MN
hot IRLR3715ZTRL
Infineon Technologies

MOSFET N-CH 20V 49A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad28.800
MOSFET (Metal Oxide)
20V
49A (Tc)
4.5V, 10V
2.55V @ 250µA
11nC @ 4.5V
810pF @ 10V
±20V
-
40W (Tc)
11 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AO4476A_103
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.408
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
2.5V @ 250µA
24nC @ 10V
1380pF @ 15V
±20V
-
3.1W (Ta)
7.7 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AOI530
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 70A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251A
  • Package / Case: TO-251-3 Stub Leads, IPak
package: TO-251-3 Stub Leads, IPak
Voorraad5.776
MOSFET (Metal Oxide)
30V
23A (Ta), 70A (Tc)
4.5V, 10V
2.2V @ 250µA
62nC @ 10V
3130pF @ 15V
±20V
-
2.5W (Ta), 83W (Tc)
2.7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251A
TO-251-3 Stub Leads, IPak
hot NP55N055SDG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 55A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 28A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad120.012
MOSFET (Metal Oxide)
55V
55A (Tc)
4.5V, 10V
2.5V @ 250µA
96nC @ 10V
4800pF @ 25V
±20V
-
1.2W (Ta), 77W (Tc)
9.5 mOhm @ 28A, 10V
175°C (TJ)
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SUP85N02-03-E3
Vishay Siliconix

MOSFET N-CH 20V 85A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21250pF @ 20V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad5.904
MOSFET (Metal Oxide)
20V
85A (Tc)
2.5V, 4.5V
450mV @ 2mA (Min)
200nC @ 4.5V
21250pF @ 20V
±8V
-
250W (Tc)
3 mOhm @ 30A, 4.5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SPP04N60C3XKSA1
Infineon Technologies

MOSFET N-CH 600V 4.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad7.744
MOSFET (Metal Oxide)
600V
4.5A (Tc)
10V
3.9V @ 200µA
25nC @ 10V
490pF @ 25V
±20V
-
50W (Tc)
950 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP100N04S303AKSA1
Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad3.248
MOSFET (Metal Oxide)
40V
100A (Tc)
10V
4V @ 150µA
145nC @ 10V
9600pF @ 25V
±20V
-
214W (Tc)
2.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
APT20M22LVFRG
Microsemi Corporation

MOSFET N-CH 200V 100A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad6.464
MOSFET (Metal Oxide)
200V
100A (Tc)
10V
4V @ 2.5mA
435nC @ 10V
10200pF @ 25V
±30V
-
520W (Tc)
22 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
IXTH11P50
IXYS

MOSFET P-CH 500V 11A TO-247AD

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad5.440
MOSFET (Metal Oxide)
500V
11A (Tc)
10V
5V @ 250µA
130nC @ 10V
4700pF @ 25V
±20V
-
300W (Tc)
750 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
RJK0301DPB-02#J0
Renesas Electronics America

MOSFET N-CH 30V 60A 5-LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-LFPAK
  • Package / Case: SC-100, SOT-669
package: SC-100, SOT-669
Voorraad2.448
MOSFET (Metal Oxide)
30V
60A (Ta)
4.5V, 10V
-
32nC @ 4.5V
5000pF @ 10V
+16V, -12V
-
65W (Tc)
2.8 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
5-LFPAK
SC-100, SOT-669
SKI03021
Sanken

MOSFET N-CH 30V 85A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 94.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 110A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.784
MOSFET (Metal Oxide)
30V
85A (Tc)
4.5V, 10V
2.5V @ 1.5mA
94.2nC @ 10V
6200pF @ 15V
±20V
-
135W (Tc)
2.4 mOhm @ 110A, 10V
150°C (TJ)
Surface Mount
TO-263-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3J355R,LF
Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 30.1 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad6.848
MOSFET (Metal Oxide)
20V
6A (Ta)
1.8V, 4.5V
1V @ 1mA
16.6nC @ 4.5V
1030pF @ 10V
±10V
-
1W (Ta)
30.1 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
-
-
STD2N80K5
STMicroelectronics

MOSFET N-CH 800V 2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V
  • Vgs (Max): 30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.688
MOSFET (Metal Oxide)
800V
2A (Tc)
10V
5V @ 100µA
3nC @ 10V
95pF @ 100V
30V
-
45W (Tc)
4.5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
GKI06109
Sanken

MOSFET N-CH 60V 9A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 23.6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad4.624
MOSFET (Metal Oxide)
60V
9A (Ta)
4.5V, 10V
2.5V @ 650µA
38.6nC @ 10V
2520pF @ 25V
±20V
-
3.1W (Ta), 59W (Tc)
8.9 mOhm @ 23.6A, 10V
150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerTDFN
hot FDS86242
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad442.296
MOSFET (Metal Oxide)
150V
4.1A (Ta)
6V, 10V
4V @ 250µA
13nC @ 10V
760pF @ 75V
±20V
-
2.5W (Ta), 5W (Tc)
67 mOhm @ 4.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
STD5N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad6.480
MOSFET (Metal Oxide)
600V
3.5A (Tc)
10V
5V @ 250µA
8.6nC @ 10V
375pF @ 100V
±30V
-
45W (Tc)
1.55 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
CSD25484F4T
Texas Instruments

MOSFET P-CH 20V 2.5A 3PICOSTAR

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Vgs (Max): -12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
package: 3-XFDFN
Voorraad28.080
MOSFET (Metal Oxide)
20V
2.5A (Ta)
1.8V, 8V
1.2V @ 250µA
1.42nC @ 4.5V
230pF @ 10V
-12V
-
500mW (Ta)
94 mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
3-PICOSTAR
3-XFDFN
hot DMG2307L-7
Diodes Incorporated

MOSFET P-CH 30V 2.5A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 371.3pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad143.292
MOSFET (Metal Oxide)
30V
2.5A (Ta)
4.5V, 10V
3V @ 250µA
8.2nC @ 10V
371.3pF @ 15V
±20V
-
760mW (Ta)
90 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
FDS8433A-G
Fairchild Semiconductor

FDS8433A - MOSFET 20V 47.0 MOHM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: -
Request a Quote
MOSFET (Metal Oxide)
20 V
5A (Ta)
2.5V, 4.5V
1V @ 250µA
28 nC @ 5 V
1130 pF @ 10 V
±8V
-
2.5W (Ta)
47mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SQJA82EP-T1_BE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Request a Quote
MOSFET (Metal Oxide)
80 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
60 nC @ 10 V
3000 pF @ 25 V
±20V
-
68W (Tc)
8.2mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IPB65R050CFD7AATMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
45A (Tc)
10V
4.5V @ 1.24mA
102 nC @ 10 V
4975 pF @ 400 V
±30V
-
227W (Tc)
50mOhm @ 24.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
EPC2034C
EPC

GANFET N-CH 200V 48A DIE

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 7mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V
  • Vgs (Max): +6V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
package: -
Voorraad38.673
GaNFET (Gallium Nitride)
200 V
48A (Ta)
5V
2.5V @ 7mA
11 nC @ 5 V
1140 pF @ 100 V
+6V, -4V
-
-
8mOhm @ 20A, 5V
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
TSM480P06CZ-C0G
Taiwan Semiconductor Corporation

MOSFET P-CH 60V 20A TO220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
20A (Tc)
4.5V, 10V
2.2V @ 250µA
22.4 nC @ 10 V
1250 pF @ 30 V
±20V
-
66W (Tc)
48mOhm @ 8A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
IRF6216TRPBF-1
Infineon Technologies

MOSFET P-CH 150V 2.2A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
package: -
Request a Quote
MOSFET (Metal Oxide)
150 V
2.2A (Ta)
10V
5V @ 250µA
49 nC @ 10 V
1280 pF @ 25 V
±20V
-
2.5W (Ta)
240mOhm @ 1.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
MCAC50N03-TP
Micro Commercial Co

N-CHANNEL MOSFET, DFN5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
package: -
Voorraad12.894
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
2.3V @ 250µA
15 nC @ 10 V
1490 pF @ 15 V
±20V
-
38W
9mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
SUP70101EL-GE3
Vishay Siliconix

MOSFET P-CH 100V 120A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
100 V
120A (Tc)
4.5V, 10V
2.5V @ 250µA
190 nC @ 10 V
7000 pF @ 50 V
±20V
-
375W (Tc)
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3