Pagina 1379 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.379/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP057N08N3GHKSA1
Infineon Technologies

MOSFET N-CH 80V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad2.704
MOSFET (Metal Oxide)
80V
80A (Tc)
6V, 10V
3.5V @ 90µA
69nC @ 10V
4750pF @ 40V
±20V
-
150W (Tc)
5.7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
AO5404E_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH SC89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Ta)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
package: SC-89, SOT-490
Voorraad2.272
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.8V, 4.5V
1V @ 250µA
1nC @ 4.5V
45pF @ 10V
±8V
-
280mW (Ta)
550 mOhm @ 500mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
2SK1342-E
Renesas Electronics America

MOSFET N-CH 900V 6A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad6.544
MOSFET (Metal Oxide)
900V
8A (Ta)
10V
-
-
1730pF @ 10V
±30V
-
100W (Tc)
1.6 Ohm @ 4A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
NTLJF3117PTAG
ON Semiconductor

MOSFET P-CH 20V 2.3A 6-WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
package: 6-WDFN Exposed Pad
Voorraad6.128
MOSFET (Metal Oxide)
20V
2.3A (Ta)
1.8V, 4.5V
1V @ 250µA
6.2nC @ 4.5V
531pF @ 10V
±8V
Schottky Diode (Isolated)
710mW (Ta)
100 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
NTD85N02RG
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 78.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad5.104
MOSFET (Metal Oxide)
24V
12A (Ta), 85A (Tc)
4.5V, 10V
2V @ 250µA
17.7nC @ 5V
2050pF @ 20V
±20V
-
1.25W (Ta), 78.1W (Tc)
5.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDP79N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 79A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 39.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad103.464
MOSFET (Metal Oxide)
150V
79A (Tc)
10V
5V @ 250µA
73nC @ 10V
3410pF @ 25V
±30V
-
463W (Tc)
30 mOhm @ 39.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FQA7N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 7.2A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad38.148
MOSFET (Metal Oxide)
800V
7.2A (Tc)
10V
5V @ 250µA
52nC @ 10V
1850pF @ 25V
±30V
-
198W (Tc)
1.5 Ohm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
hot FQPF27N25T
Fairchild/ON Semiconductor

MOSFET N-CH 250V 14A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad6.560
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
5V @ 250µA
65nC @ 10V
2450pF @ 25V
±30V
-
55W (Tc)
110 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
BS107AG
ON Semiconductor

MOSFET N-CH 200V 0.25A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
package: TO-226-3, TO-92-3 (TO-226AA)
Voorraad3.232
MOSFET (Metal Oxide)
200V
250mA (Ta)
10V
3V @ 1mA
-
60pF @ 25V
±20V
-
350mW (Ta)
6.4 Ohm @ 250mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
IPB65R065C7ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad4.896
MOSFET (Metal Oxide)
600V
7.3A (Tc)
10V
4.5V @ 200µA
12nC @ 10V
557pF @ 100V
±20V
-
171W (Tc)
600 mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP65R310CFDAAKSA1
Infineon Technologies

MOSFET N-CH 650V TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 310 mOhm @ 4.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad6.544
MOSFET (Metal Oxide)
650V
11.4A (Tc)
10V
4.5V @ 440µA
41nC @ 10V
1110pF @ 100V
±20V
-
104.2W (Tc)
310 mOhm @ 4.4A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
hot SI1013CX-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 0.45A SC89-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 190mW (Ta)
  • Rds On (Max) @ Id, Vgs: 760 mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
package: SC-89, SOT-490
Voorraad197.820
MOSFET (Metal Oxide)
20V
450mA (Ta)
4.5V
1V @ 250µA
2.5nC @ 4.5V
45pF @ 10V
±8V
-
190mW (Ta)
760 mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-3
SC-89, SOT-490
IXKK85N60C
IXYS

MOSFET N-CH 600V 85A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264A
  • Package / Case: TO-264-3, TO-264AA
package: TO-264-3, TO-264AA
Voorraad6.880
MOSFET (Metal Oxide)
600V
85A (Tc)
10V
4V @ 4mA
650nC @ 10V
-
±20V
Super Junction
-
36 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264A
TO-264-3, TO-264AA
hot R8005ANX
Rohm Semiconductor

MOSFET N-CH 800V 5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.08 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-2 Full Pack
package: TO-220-2 Full Pack
Voorraad89.196
MOSFET (Metal Oxide)
800V
5A (Tc)
10V
5V @ 1mA
21nC @ 10V
485pF @ 25V
±30V
-
40W (Tc)
2.08 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-2 Full Pack
hot NDD03N60ZT4G
ON Semiconductor

MOSFET N-CH 600V DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad117.528
MOSFET (Metal Oxide)
600V
2.6A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
312pF @ 25V
±30V
-
61W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SPW47N60C3
Infineon Technologies

MOSFET N-CH 650V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 415W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad1.142.304
MOSFET (Metal Oxide)
650V
47A (Tc)
10V
3.9V @ 2.7mA
320nC @ 10V
6800pF @ 25V
±20V
-
415W (Tc)
70 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
DMG1013UWQ-7
Diodes Incorporated

MOSFET P-CH 20V 0.82A SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
package: SC-70, SOT-323
Voorraad3.600
MOSFET (Metal Oxide)
20V
820mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.62nC @ 4.5V
59.76pF @ 16V
±6V
-
310mW (Ta)
750 mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
SIHP35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad12.438
MOSFET (Metal Oxide)
600V
32A (Tc)
10V
4V @ 250µA
132nC @ 10V
2760pF @ 100V
±30V
-
250W (Tc)
94 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SIS890DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 30A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 802pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
package: PowerPAK? 1212-8
Voorraad106.440
MOSFET (Metal Oxide)
100V
30A (Tc)
4.5V, 10V
3V @ 250µA
29nC @ 10V
802pF @ 50V
±20V
-
3.7W (Ta), 52W (Tc)
23.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
BUK4D110-20PX
Nexperia USA Inc.

SMALL SIGNAL MOSFET FOR AUTOMOTI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 3.4A, 8V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
package: -
Voorraad18.000
MOSFET (Metal Oxide)
20 V
3.4A (Ta), 6.7A (Tc)
2.5V, 8V
1.3V @ 250µA
5 nC @ 4.5 V
365 pF @ 10 V
±12V
-
2W (Ta), 7.5W (Tc)
96mOhm @ 3.4A, 8V
-55°C ~ 175°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
IQE046N08LM5CGSCATMA1
Infineon Technologies

OPTIMOS 5 POWER-TRANSISTOR 60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 47µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHTFN-9
  • Package / Case: 9-PowerWDFN
package: -
Voorraad15.915
MOSFET (Metal Oxide)
80 V
15.6A (Ta), 99A (Tc)
4.5V, 10V
2.3V @ 47µA
38 nC @ 10 V
3250 pF @ 40 V
±20V
-
2.5W (Ta), 100W (Tc)
4.6mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-WHTFN-9
9-PowerWDFN
2SK3055-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTP095N65S3H
onsemi

POWER MOSFET, N-CHANNEL, SUPERFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: -
Request a Quote
MOSFET (Metal Oxide)
650 V
30A (Tc)
10V
4V @ 2.8mA
58 nC @ 10 V
2833 pF @ 400 V
±30V
-
208W (Tc)
95mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
MCAC50P04HE3-TP
Micro Commercial Co

MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tj)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
75 nC @ 10 V
3302 pF @ 30 V
±20V
-
96W (Tj)
13mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
IPW65R075CFD7AXKSA1
Infineon Technologies

MOSFET N-CH 650V 32A TO247-3-41

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 820µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
package: -
Voorraad720
MOSFET (Metal Oxide)
650 V
32A (Tc)
10V
4.5V @ 820µA
68 nC @ 10 V
3288 pF @ 400 V
±20V
-
171W (Tc)
75mOhm @ 16.4A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
TPCA8016-H-TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A 8-SOPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 13A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
60 V
25A (Ta)
-
2.3V @ 1mA
22 nC @ 10 V
1375 pF @ 10 V
-
-
-
21mOhm @ 13A, 10V
-
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
DMP3006LPSW-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
15A (Ta), 92A (Tc)
4.5V, 10V
2.1V @ 250µA
106 nC @ 10 V
5639 pF @ 15 V
±20V
-
1.6W
7.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
SISS32DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 80V 17.4A/63A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8S
  • Package / Case: PowerPAK® 1212-8S
package: -
Voorraad46.644
MOSFET (Metal Oxide)
80 V
17.4A (Ta), 63A (Tc)
7.5V, 10V
3.8V @ 250µA
42 nC @ 10 V
1930 pF @ 40 V
±20V
-
5W (Ta), 65.7W (Tc)
7.2mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S