Afbeelding |
Onderdeelnummer |
Fabrikant |
Omschrijving |
package |
Voorraad |
Aantal |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 35A DIRECTFET
|
package: DirectFET? Isometric L6 |
Voorraad4.832 |
|
MOSFET (Metal Oxide) | 40V | 35A (Ta), 184A (Tc) | 10V | 4V @ 250µA | 194nC @ 10V | 7471pF @ 25V | ±20V | - | 3.3W (Ta), 94W (Tc) | 1.6 mOhm @ 109A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET? Isometric L6 |
||
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad13.008 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 6V, 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 25V | ±20V | - | 3.75W (Ta), 60W (Tc) | 270 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 12V 2.7A SC70-6
|
package: 6-TSSOP, SC-88, SOT-363 |
Voorraad776.712 |
|
MOSFET (Metal Oxide) | 12V | 2.7A (Ta) | 1.8V, 4.5V | 450mV @ 250µA (Min) | 8nC @ 4.5V | - | ±12V | - | 1W (Ta) | 85 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
ON Semiconductor |
MOSFET N-CH 24V 12.5A DPAK
|
package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Voorraad52.740 |
|
MOSFET (Metal Oxide) | 24V | 12.5A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 28nC @ 4.5V | 3440pF @ 20V | ±20V | - | 1.5W (Ta), 110W (Tc) | 4.6 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 22A BGA
|
package: 36-VFBGA |
Voorraad72.900 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta) | 4.5V, 10V | 3V @ 250µA | 73nC @ 5V | 4993pF @ 15V | ±20V | - | 2.8W (Ta) | 2.9 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 36-BGA (5.5x5) | 36-VFBGA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 2.1A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad7.824 |
|
MOSFET (Metal Oxide) | 300V | 2.1A (Tc) | 10V | 5V @ 250µA | 5nC @ 10V | 130pF @ 25V | ±30V | - | 3.13W (Ta), 40W (Tc) | 3.7 Ohm @ 1.05A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 6.2A IPAK
|
package: TO-251-3 Short Leads, IPak, TO-251AA |
Voorraad7.840 |
|
MOSFET (Metal Oxide) | 250V | 6.2A (Tc) | 10V | 5V @ 250µA | 15nC @ 10V | 530pF @ 25V | ±30V | - | 2.5W (Ta), 50W (Tc) | 550 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 60V 11A D2PAK
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad701.880 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 280 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
NXP |
MOSFET N-CH 30V LFPAK
|
package: SC-100, SOT-669 |
Voorraad2.256 |
|
MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
MOSFET N-CH 30V 15A POWERFLAT
|
package: 8-PowerVDFN |
Voorraad5.840 |
|
MOSFET (Metal Oxide) | 30V | 15A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12nC @ 4.5V | 1500pF @ 25V | ±22V | - | 2W (Ta), 50W (Tc) | 5.4 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 11A TO-247
|
package: TO-247-3 |
Voorraad2.528 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 5V @ 500µA | 64nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 440 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 8A TO-220
|
package: TO-220-3 |
Voorraad7.328 |
|
MOSFET (Metal Oxide) | 1200V | 8A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 3A 6-TSOP
|
package: SOT-23-6 Thin, TSOT-23-6 |
Voorraad3.664 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 5.5nC @ 5V | - | ±20V | - | 1.14W (Ta) | 80 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A TO-220
|
package: TO-220-3 |
Voorraad16.104 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 1540pF @ 25V | ±25V | - | 120W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 3.9A I2PAK
|
package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Voorraad9.468 |
|
MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 880pF @ 25V | ±30V | - | 3.13W (Ta), 130W (Tc) | 3.6 Ohm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
60V/270A TRENCHT3 HIPERFET MOSFE
|
package: TO-247-3 |
Voorraad5.040 |
|
MOSFET (Metal Oxide) | 60V | 270A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 12600pF @ 25V | ±20V | - | 480W (Tc) | 3.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
package: TO-220-3 |
Voorraad108.684 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2840pF @ 25V | ±20V | - | 140W (Tc) | 7.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
T6 40V MOSFET
|
package: 8-PowerTDFN, 5 Leads |
Voorraad6.064 |
|
MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 3.5V @ 250µA | 13nC @ 10V | 4300pF @ 25V | ±20V | - | 3.8W (Ta), 128W (Tc) | 1.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Infineon Technologies |
MOSFET N-CH 120V 56A TO263-3
|
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Voorraad505.200 |
|
MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 4V @ 61µA | 49nC @ 10V | 3220pF @ 60V | ±20V | - | 107W (Tc) | 14.4 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 20V 8A CHIPFET
|
package: PowerPAK? ChipFET? Single |
Voorraad29.580 |
|
MOSFET (Metal Oxide) | 20V | 8A (Tc) | 2.5V, 4.5V | 1.4V @ 250µA | 26nC @ 10V | 665pF @ 10V | ±12V | - | 3.5W (Ta), 10.9W (Tc) | 52 mOhm @ 6.7A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
||
Infineon Technologies |
MOSFET N-CH 100V 33A TO-220AB
|
package: TO-220-3 |
Voorraad23.220 |
|
MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | ±20V | - | 130W (Tc) | 44 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 5.3A U-DFN
|
package: 6-UDFN Exposed Pad |
Voorraad155.340 |
|
MOSFET (Metal Oxide) | 60V | 5.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 22.4nC @ 10V | 1287pF @ 25V | ±20V | - | 660mW (Ta) | 38 mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 0.2A SOT-23
|
package: TO-236-3, SC-59, SOT-23-3 |
Voorraad6.648 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.75V, 5V | 1.5V @ 1mA | 2.4nC @ 10V | 50pF @ 25V | ±20V | - | 350mW (Ta) | 3.5 Ohm @ 200mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 11A 8SOIC
|
package: 8-SOIC (0.154", 3.90mm Width) |
Voorraad62.316 |
|
MOSFET (Metal Oxide) | 20V | 11A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 60nC @ 4.5V | 4044pF @ 10V | ±12V | - | 2.5W (Ta) | 14 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Panjit International Inc. |
60V P-CHANNEL ENHANCEMENT MODE M
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 22 nC @ 10 V | 1256 pF @ 30 V | ±20V | - | 2W (Ta), 25W (Tc) | 48mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V PowerDI5060
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 84A (Tc) | 2.5V, 10V | 1.3V @ 250µA | 123 nC @ 10 V | 4777 pF @ 10 V | ±12V | - | 1.95W (Ta), 3.57W (Tc) | 5.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 600V 20.2A TO220F-3
|
package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20.2A (Tj) | - | 3.5V @ 250µA | 74 nC @ 10 V | 2950 pF @ 25 V | ±20V | - | 39W (Tc) | 199mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
||
Renesas Electronics Corporation |
TRANSISTOR
|
package: - |
Request a Quote |
|
- | - | 16A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |