Pagina 1297 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.297/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRF3305PBF
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad2.000
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
150nC @ 10V
3650pF @ 25V
±20V
-
330W (Tc)
8 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AON6532P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 68A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 710mV @ 1A
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad2.112
MOSFET (Metal Oxide)
30V
68A
10V
710mV @ 1A
17.2nC @ 10V
1080pF @ 15V
±20V
-
35.7W (Tc)
4.1 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
-
-
PHB110NQ08T,118
Nexperia USA Inc.

MOSFET N-CH 75V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 113.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad5.120
MOSFET (Metal Oxide)
75V
75A (Tc)
10V
4V @ 1mA
113.1nC @ 10V
4860pF @ 25V
±20V
-
230W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD5N60CTM_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 2.8A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad7.408
MOSFET (Metal Oxide)
600V
2.8A (Tc)
10V
4V @ 250µA
19nC @ 10V
670pF @ 25V
±30V
-
2.5W (Ta), 49W (Tc)
2.5 Ohm @ 1.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3205ZSTRL
Vishay Siliconix

MOSFET N-CH 55V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 66A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad6.720
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
110nC @ 10V
3450pF @ 25V
±20V
-
170W (Tc)
6.5 mOhm @ 66A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot STP40N20
STMicroelectronics

MOSFET N-CH 200V 40A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad64.716
MOSFET (Metal Oxide)
200V
40A (Tc)
10V
4V @ 250µA
75nC @ 10V
2500pF @ 25V
±20V
-
160W (Tc)
45 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
MMIX1F210N30P3
IXYS

MOSFET N-CH 300V 108A MMIX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 105A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 24-SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
package: 24-PowerSMD, 21 Leads
Voorraad7.008
MOSFET (Metal Oxide)
300V
108A (Tc)
-
5V @ 8mA
-
16200pF @ 25V
-
-
-
16 mOhm @ 105A, 10V
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
NTBV75N06T4G
ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad3.072
MOSFET (Metal Oxide)
60V
75A (Ta)
10V
4V @ 250µA
130nC @ 10V
4510pF @ 25V
±20V
-
-
9.5 mOhm @ 37.5A, 10V
-
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C426NAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
package: 8-PowerTDFN, 5 Leads
Voorraad5.840
MOSFET (Metal Oxide)
40V
41A (Ta), 235A (Tc)
10V
3.5V @ 250µA
65nC @ 10V
4300pF @ 25V
±20V
-
3.8W (Ta), 128W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
STD24N06LT4G-VF01
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 10A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad5.280
MOSFET (Metal Oxide)
60V
24A (Tc)
5V
2V @ 250µA
32nC @ 5V
1140pF @ 25V
±15V
-
1.36W (Ta), 62.5W (Tj)
45 mOhm @ 10A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
STW40N60M2-4
STMicroelectronics

MOSFET N-CH 600V 34A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.744
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
4V @ 250µA
57nC @ 10V
2500pF @ 100V
±25V
-
250W (Tc)
88 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STF5N60M2
STMicroelectronics

MOSFET N-CH 600V 3.7A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad4.960
MOSFET (Metal Oxide)
600V
3.7A (Tc)
10V
4V @ 250µA
4.5nC @ 10V
165pF @ 100V
±25V
-
20W (Tc)
1.4 Ohm @ 1.85A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot AOT9N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 9A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
package: TO-220-3
Voorraad12.408
MOSFET (Metal Oxide)
500V
9A (Tc)
10V
4.5V @ 250µA
28nC @ 10V
1042pF @ 25V
±30V
-
192W (Tc)
850 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot STI21N65M5
STMicroelectronics

MOSFET N-CH 650V 17A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 179 mOhm @ 8.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad7.648
MOSFET (Metal Oxide)
650V
17A (Tc)
10V
5V @ 250µA
50nC @ 10V
1950pF @ 100V
±25V
-
125W (Tc)
179 mOhm @ 8.5A, 10V
150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
SQJA92EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 57A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad26.556
MOSFET (Metal Oxide)
80V
57A (Tc)
10V
3.5V @ 250µA
45nC @ 10V
2650pF @ 25V
±20V
-
68W (Tc)
9.5 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SIHG22N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 21A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad7.956
MOSFET (Metal Oxide)
600V
21A (Tc)
10V
4V @ 250µA
86nC @ 10V
1920pF @ 100V
±30V
-
227W (Tc)
180 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
BUZ100S-E3045A
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
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TW083Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 83

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 111W (Tc)
  • Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
package: -
Voorraad360
SiC (Silicon Carbide Junction Transistor)
650 V
30A (Tc)
18V
5V @ 600µA
28 nC @ 18 V
873 pF @ 400 V
+25V, -10V
-
111W (Tc)
118mOhm @ 15A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
IPB320P10LMATMA1
Infineon Technologies

TRENCH >=100V PG-TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 5.55mA
  • Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Voorraad2.991
MOSFET (Metal Oxide)
100 V
6.5A (Ta), 63A (Tc)
4.5V, 10V
2V @ 5.55mA
219 nC @ 10 V
11000 pF @ 50 V
±20V
-
3.8W (Ta), 300W (Tc)
32mOhm @ 54A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI6435ADQ-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 4.7A 8-TSSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
package: -
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MOSFET (Metal Oxide)
30 V
4.7A (Ta)
-
1V @ 250µA (Min)
20 nC @ 5 V
-
-
-
-
30mOhm @ 5.5A, 10V
-
Surface Mount
8-TSSOP
8-TSSOP (0.173", 4.40mm Width)
SPP08N80C3XKSA1
Infineon Technologies

MOSFET N-CH 800V 8A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 470µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
package: -
Voorraad5.991
MOSFET (Metal Oxide)
800 V
8A (Tc)
10V
3.9V @ 470µA
60 nC @ 10 V
1100 pF @ 100 V
±20V
-
104W (Tc)
650mOhm @ 5.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
SQS141ELNW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 40 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7458 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK® 1212-8SLW
  • Package / Case: PowerPAK® 1212-8SLW
package: -
Voorraad8.712
MOSFET (Metal Oxide)
40 V
101A (Tc)
4.5V, 10V
2.5V @ 250µA
141 nC @ 10 V
7458 pF @ 25 V
±20V
-
192W (Tc)
10mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
SIRS4301DP-T1-GE3
Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Voorraad17.160
MOSFET (Metal Oxide)
30 V
53.7A (Ta), 227A (Tc)
4.5V, 10V
2.3V @ 250µA
255 nC @ 4.5 V
19750 pF @ 15 V
±20V
-
7.4W (Ta), 132W (Tc)
1.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IMDQ75R008M1HXUMA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SCT070H120G3AG
STMicroelectronics

H2PAK-7

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 850 V
  • Vgs (Max): +18V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 15A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
package: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
30A (Tc)
15V, 18V
4.2V @ 1mA
37 nC @ 18 V
900 pF @ 850 V
+18V, -5V
-
223W (Tc)
87mOhm @ 15A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TK1K7A60F-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 460µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
package: -
Voorraad3
MOSFET (Metal Oxide)
600 V
4A (Ta)
10V
4V @ 460µA
16 nC @ 10 V
560 pF @ 300 V
±30V
-
35W (Tc)
1.7Ohm @ 2A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
MCMN2012A-TP
Micro Commercial Co

N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020-6JA
  • Package / Case: 6-WDFN Exposed Pad
package: -
Voorraad52.614
MOSFET (Metal Oxide)
20 V
12A
1.8V, 4.5V
1V @ 250µA
32 nC @ 5 V
1800 pF @ 4 V
±10V
-
-
15mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020-6JA
6-WDFN Exposed Pad
SIHJ690N60E-T1-GE3
Vishay Siliconix

MOSFET N-CH 600V 5.6A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
5.6A (Tc)
10V
5V @ 250µA
12 nC @ 10 V
347 pF @ 100 V
±30V
-
48W (Tc)
700mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8