Pagina 1237 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.237/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot SUD50N10-34P-T4-E3
Vishay Siliconix

MOSFET N-CH 100V 5.9A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad29.400
MOSFET (Metal Oxide)
100V
5.9A (Ta), 20A (Tc)
6V, 10V
4V @ 250µA
30nC @ 10V
1800pF @ 25V
±20V
-
2.5W (Ta), 56W (Tc)
34 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SI4418DY-T1-E3
Vishay Siliconix

MOSFET N-CH 200V 2.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad268.200
MOSFET (Metal Oxide)
200V
2.3A (Ta)
6V, 10V
4V @ 250µA
30nC @ 10V
-
±20V
-
1.5W (Ta)
130 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FQAF47P06
Fairchild/ON Semiconductor

MOSFET P-CH 60V 38A TO-3PF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: SC-94
package: SC-94
Voorraad5.488
MOSFET (Metal Oxide)
60V
38A (Tc)
10V
4V @ 250µA
110nC @ 10V
3600pF @ 25V
±25V
-
100W (Tc)
26 mOhm @ 19A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PF
SC-94
FQB13N06LTM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 13.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 13.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 6.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad2.160
MOSFET (Metal Oxide)
60V
13.6A (Tc)
5V, 10V
2.5V @ 250µA
6.4nC @ 5V
350pF @ 25V
±20V
-
3.75W (Ta), 45W (Tc)
110 mOhm @ 6.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVN3320FTC
Diodes Incorporated

MOSFET N-CH 200V 0.06A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad3.568
MOSFET (Metal Oxide)
200V
60mA (Ta)
10V
3V @ 1mA
-
45pF @ 25V
±20V
-
330mW (Ta)
25 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
FDFS2P102
Fairchild/ON Semiconductor

MOSFET P-CH 20V 3.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad5.296
MOSFET (Metal Oxide)
20V
3.3A (Ta)
4.5V, 10V
2V @ 250µA
10nC @ 10V
270pF @ 10V
±20V
Schottky Diode (Isolated)
900mW (Ta)
125 mOhm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AUIRFR3806TRL
Infineon Technologies

MOSFET N-CH 60V 43A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad4.112
MOSFET (Metal Oxide)
60V
43A (Tc)
10V
4V @ 50µA
30nC @ 10V
1150pF @ 50V
±20V
-
71W (Tc)
15.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C604NLWFT3G
ON Semiconductor

MOSFET N-CH 60V 40A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad2.720
MOSFET (Metal Oxide)
60V
40A (Ta), 287A (Tc)
4.5V, 10V
2V @ 250µA
120nC @ 10V
8900pF @ 25V
±20V
-
3.9W (Ta), 200W (Tc)
1.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
SIS322DNT-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 38.3A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
package: PowerPAK? 1212-8
Voorraad6.864
MOSFET (Metal Oxide)
30V
38.3A (Tc)
4.5V, 10V
2.4V @ 250µA
21.5nC @ 10V
1000pF @ 15V
+20V, -16V
-
3.2W (Ta), 19.8W (Tc)
7.5 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
hot STF8NM50N
STMicroelectronics

MOSFET N-CH 500V 5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad13.716
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4V @ 250µA
14nC @ 10V
364pF @ 50V
±25V
-
20W (Tc)
790 mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot IPB025N10N3 G
Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
package: TO-263-7, D2Pak (6 Leads + Tab)
Voorraad3.824
MOSFET (Metal Oxide)
100V
180A (Tc)
6V, 10V
3.5V @ 275µA
206nC @ 10V
14800pF @ 50V
±20V
-
300W (Tc)
2.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7
TO-263-7, D2Pak (6 Leads + Tab)
hot FDS8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 10.2A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 897pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 10.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad1.105.728
MOSFET (Metal Oxide)
30V
10.2A (Ta)
4.5V, 10V
2.5V @ 250µA
26nC @ 10V
897pF @ 15V
±20V
-
2.5W (Ta)
14 mOhm @ 10.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SQJA94EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 80V 46A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad23.208
MOSFET (Metal Oxide)
80V
46A (Tc)
10V
3.5V @ 250µA
35nC @ 10V
2000pF @ 25V
±20V
-
55W (Tc)
13.5 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SISS40DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 36.5A PPAK 1212

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
  • Package / Case: 8-PowerVDFN
package: 8-PowerVDFN
Voorraad29.826
MOSFET (Metal Oxide)
100V
36.5A (Tc)
6V, 10V
3.5V @ 250µA
24nC @ 10V
845pF @ 50V
±20V
-
3.7W (Ta), 52W (Tc)
21 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8S (3.3x3.3)
8-PowerVDFN
hot IRL540STRLPBF
Vishay Siliconix

MOSFET N-CH 100V 28A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad84.012
MOSFET (Metal Oxide)
100V
28A (Tc)
4V, 5V
2V @ 250µA
64nC @ 5V
2200pF @ 25V
±10V
-
3.7W (Ta), 150W (Tc)
77 mOhm @ 17A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB34P10TM_F085
Fairchild/ON Semiconductor

MOSFET P-CH 100V 33.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad74.358
MOSFET (Metal Oxide)
100V
33.5A (Tc)
10V
4V @ 250µA
110nC @ 10V
2910pF @ 25V
±25V
-
3.75W (Ta), 155W (Tc)
60 mOhm @ 16.75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot MMBF170-7-F
Diodes Incorporated

MOSFET N-CH 60V 500MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
package: TO-236-3, SC-59, SOT-23-3
Voorraad2.494.728
MOSFET (Metal Oxide)
60V
500mA (Ta)
4.5V, 10V
3V @ 250µA
-
40pF @ 10V
±20V
-
300mW (Ta)
5 Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
GT080N10K
Goford Semiconductor

N100V, 75A,RD<8M@10V,VTH1V~3V, T

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2056 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad5.271
MOSFET (Metal Oxide)
100 V
65A (Tc)
4.5V, 10V
3V @ 250µA
70 nC @ 10 V
2056 pF @ 50 V
±20V
-
100W (Tc)
8mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2302CDS-T1-GE3-ML
MOSLEADER

N 20V 2.9A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP015N04NF2SAKMA1
Infineon Technologies

TRENCH PG-TO220-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Voorraad2.775
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFR320TRPBF-BE3
Vishay Siliconix

N-CHANNEL 400V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad5.892
MOSFET (Metal Oxide)
400 V
3.1A (Tc)
10V
4V @ 250µA
20 nC @ 10 V
350 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
1.8Ohm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTP185N60S5H
onsemi

MOSFET N-CH 600V 15A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.3V @ 1.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
package: -
Voorraad2.385
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.3V @ 1.4mA
25 nC @ 10 V
1350 pF @ 400 V
±30V
-
116W (Tc)
185mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SQD50P04-13L_T4GE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Voorraad11.598
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
80 nC @ 10 V
3590 pF @ 25 V
±20V
-
3W (Ta), 136W (Tc)
13mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
FDB8870-F085
Fairchild Semiconductor

MOSFET N-CH 30V 23A/160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
30 V
23A (Ta), 160A (Tc)
-
2.5V @ 250µA
132 nC @ 10 V
5200 pF @ 15 V
±20V
-
160W (Tc)
3.9mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFA3N120-TRL
IXYS

MOSFET N-CH 1200V 3A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA (IXFA)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
package: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
3A (Tc)
10V
5V @ 1.5mA
39 nC @ 10 V
1050 pF @ 25 V
±20V
-
200W (Tc)
4.5Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263AA (IXFA)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AO3453-ML
MOSLEADER

P -30V -2.6A SOT23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPDQ60R040S7AXTMA1
Infineon Technologies

MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 272W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
package: -
Request a Quote
MOSFET (Metal Oxide)
600 V
14A (Tc)
12V
4.5V @ 790µA
83 nC @ 12 V
-
±20V
-
272W (Tc)
40mOhm @ 13A, 12V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
PSMN1R0-40YLD-2X
Nexperia USA Inc.

PSMN1R0-40YLD/SOT1023/4 LEADS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 198W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
package: -
Request a Quote
MOSFET (Metal Oxide)
40 V
280A (Ta)
4.5V, 10V
2.2V @ 1mA
127 nC @ 10 V
8845 pF @ 20 V
±20V
-
198W (Ta)
1.1mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SOT-1023, 4-LFPAK