Pagina 1079 - Transistors - FET's, MOSFET's - Single | Discrete halfgeleiderproducten | Heisener Electronics
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Transistors - FET's, MOSFET's - Single

Archief 42.029
Pagina  1.079/1.502
Afbeelding
Onderdeelnummer
Fabrikant
Omschrijving
package
Voorraad
Aantal
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSP149 E6327
Infineon Technologies

MOSFET N-CH 200V 660MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
package: TO-261-4, TO-261AA
Voorraad2.048
MOSFET (Metal Oxide)
200V
660mA (Ta)
0V, 10V
1V @ 400µA
14nC @ 5V
430pF @ 25V
±20V
Depletion Mode
1.8W (Ta)
1.8 Ohm @ 660mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IRF6616TR1
Infineon Technologies

MOSFET N-CH 30V 19A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 19A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
package: DirectFET? Isometric MX
Voorraad3.536
MOSFET (Metal Oxide)
30V
19A (Ta), 106A (Tc)
4.5V, 10V
2.25V @ 250µA
44nC @ 4.5V
3765pF @ 20V
±20V
-
2.8W (Ta), 89W (Tc)
5 mOhm @ 19A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
VS-FB180SA10P
Vishay Semiconductor Diodes Division

MOSFET N-CH 100V 180A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 180A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4
package: SOT-227-4
Voorraad2.656
MOSFET (Metal Oxide)
100V
180A
10V
4V @ 250µA
380nC @ 10V
10700pF @ 25V
±20V
-
480W (Tc)
6.5 mOhm @ 180A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4
hot SIS334DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 20A 1212-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8
  • Package / Case: PowerPAK? 1212-8
package: PowerPAK? 1212-8
Voorraad36.000
MOSFET (Metal Oxide)
30V
20A (Tc)
4.5V, 10V
2.4V @ 250µA
18nC @ 10V
640pF @ 15V
±20V
-
3.8W (Ta), 50W (Tc)
11.3 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8
PowerPAK? 1212-8
SI4466DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 9.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
package: 8-SOIC (0.154", 3.90mm Width)
Voorraad3.792
MOSFET (Metal Oxide)
20V
9.5A (Ta)
2.5V, 4.5V
1.4V @ 250µA
60nC @ 4.5V
-
±12V
-
1.5W (Ta)
9 mOhm @ 13.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PMN49EN,165
NXP

MOSFET N-CH 30V 4.6A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
package: SC-74, SOT-457
Voorraad6.768
MOSFET (Metal Oxide)
30V
4.6A (Tc)
4.5V, 10V
2V @ 1mA
8.8nC @ 4.5V
350pF @ 30V
±20V
-
1.75W (Tc)
47 mOhm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
hot IRFZ34S
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Voorraad8.448
MOSFET (Metal Oxide)
60V
30A (Tc)
10V
4V @ 250µA
46nC @ 10V
1200pF @ 25V
±20V
-
3.7W (Ta), 88W (Tc)
50 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR9010TRL
Vishay Siliconix

MOSFET P-CH 50V 5.3A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad3.216
MOSFET (Metal Oxide)
50V
5.3A (Tc)
10V
4V @ 250µA
9.1nC @ 10V
240pF @ 25V
±20V
-
25W (Tc)
500 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
IRF9610L
Vishay Siliconix

MOSFET P-CH 200V 1.8A TO-262

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
package: TO-262-3 Long Leads, I2Pak, TO-262AA
Voorraad5.776
MOSFET (Metal Oxide)
200V
1.8A (Tc)
10V
4V @ 250µA
11nC @ 10V
170pF @ 25V
±20V
-
-
3 Ohm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
PMN27UN,135
NXP

MOSFET N-CH 20V 5.7A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
package: SC-74, SOT-457
Voorraad2.768
MOSFET (Metal Oxide)
20V
5.7A (Tc)
1.8V, 4.5V
700mV @ 1mA
10.6nC @ 4.5V
740pF @ 10V
±8V
-
1.75W (Tc)
34 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
IXFN300N10P
IXYS

MOSFET N-CH 100V 295A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 295A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1070W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
package: SOT-227-4, miniBLOC
Voorraad5.552
MOSFET (Metal Oxide)
100V
295A
10V
5V @ 8mA
279nC @ 10V
23000pF @ 25V
±20V
-
1070W (Tc)
5.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SIHG73N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 73A TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad2.704
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
4V @ 250µA
362nC @ 10V
7700pF @ 100V
±30V
-
520W (Tc)
39 mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
MCH3478-TL-W
ON Semiconductor

MOSFET N-CH 30V 2A MCPH3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCPH
  • Package / Case: 3-SMD, Flat Leads
package: 3-SMD, Flat Leads
Voorraad3.232
MOSFET (Metal Oxide)
30V
2A (Ta)
1.8V, 4.5V
-
1.7nC @ 4.5V
130pF @ 10V
±12V
-
800mW (Ta)
165 mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
3-MCPH
3-SMD, Flat Leads
IXTQ40N50L2
IXYS

MOSFET N-CH 500V 40A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
package: TO-3P-3, SC-65-3
Voorraad4.576
MOSFET (Metal Oxide)
500V
40A (Tc)
10V
4.5V @ 250µA
320nC @ 10V
10400pF @ 25V
±20V
-
540W (Tc)
170 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
NDFPD1N150CG
ON Semiconductor

MOSFET N-CH 1500V 100MA TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 Ohm @ 50mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack
package: TO-220-3 Full Pack
Voorraad2.576
MOSFET (Metal Oxide)
1500V
100mA (Ta)
10V
-
4.2nC @ 10V
80pF @ 30V
±30V
-
2W (Ta), 20W (Tc)
150 Ohm @ 50mA, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack
IXFR64N60Q3
IXYS

MOSFET N-CH 600V 42A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 568W (Tc)
  • Rds On (Max) @ Id, Vgs: 104 mOhm @ 32A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: TO-247-3
package: TO-247-3
Voorraad6.144
MOSFET (Metal Oxide)
600V
42A (Tc)
10V
6.5V @ 4mA
190nC @ 10V
9930pF @ 25V
±30V
-
568W (Tc)
104 mOhm @ 32A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
TO-247-3
DMTH6010LK3-13
Diodes Incorporated

MOSFET N-CH 60V 14.8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
package: TO-252-3, DPak (2 Leads + Tab), SC-63
Voorraad4.112
MOSFET (Metal Oxide)
60V
14.8A (Ta), 70A (Tc)
4.5V, 10V
3V @ 250µA
41.3nC @ 10V
2090pF @ 30V
±20V
-
3.1W (Ta)
8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot CSD16407Q5C
Texas Instruments

MOSFET N-CH 25V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V
  • Vgs (Max): +16V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (5x6)
  • Package / Case: 8-PowerTDFN
package: 8-PowerTDFN
Voorraad36.000
MOSFET (Metal Oxide)
25V
31A (Ta), 100A (Tc)
4.5V, 10V
1.9V @ 250µA
18nC @ 4.5V
2660pF @ 12.5V
+16V, -12V
-
3.1W (Ta)
2.4 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
SQJ443EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 40A POWERPAK SO8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
package: PowerPAK? SO-8
Voorraad2.096
MOSFET (Metal Oxide)
40V
40A (Tc)
4.5V, 10V
2.5V @ 250µA
57nC @ 10V
2030pF @ 20V
±20V
-
83W (Tc)
29 mOhm @ 18A, 10V
-55°C ~ 175°C (TA)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
SSM6J771G,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A 6WCSP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA, 3V
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 3A, 8.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 6-UFBGA, WLCSP
package: 6-UFBGA, WLCSP
Voorraad2.656
MOSFET (Metal Oxide)
20V
5A (Ta)
2.5V, 8.5V
1.2V @ 1mA, 3V
9.8nC @ 4.5V
870pF @ 10V
±12V
-
1.2W (Ta)
31 mOhm @ 3A, 8.5V
150°C (TJ)
Surface Mount
-
6-UFBGA, WLCSP
STFI10N62K3
STMicroelectronics

MOSFET N CH 620V 8.4A I2PAKFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 620V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I2Pak
package: TO-262-3 Full Pack, I2Pak
Voorraad13.254
MOSFET (Metal Oxide)
620V
8.4A (Tc)
10V
4.5V @ 100µA
42nC @ 10V
1250pF @ 50V
±30V
-
30W (Tc)
750 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAKFP (TO-281)
TO-262-3 Full Pack, I2Pak
AONR66620
Alpha & Omega Semiconductor Inc.

N

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN-EP (3x3)
  • Package / Case: 8-PowerVDFN
package: -
Voorraad15.000
MOSFET (Metal Oxide)
60 V
17.5A (Ta), 24A (Tc)
8V, 10V
3.6V @ 250µA
25 nC @ 10 V
1070 pF @ 30 V
±20V
-
5W (Ta), 27W (Tc)
9.1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN-EP (3x3)
8-PowerVDFN
SQJ459EP-T2_GE3
Vishay Siliconix

P-CHANNEL 60-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4586 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8 Dual
  • Package / Case: PowerPAK® SO-8 Dual
package: -
Voorraad13.185
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
2.5V @ 250µA
108 nC @ 10 V
4586 pF @ 30 V
±20V
-
83W (Tc)
18mOhm @ 3.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
UJ4C075033K3S
Qorvo

750V/33MOHM, SIC, CASCODE, G4, T

  • FET Type: N-Channel
  • Technology: SiCFET (Cascode SiCJFET)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 242W (Tc)
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 12V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
package: -
Voorraad2.766
SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
6V @ 10mA
37.8 nC @ 15 V
1400 pF @ 400 V
±20V
-
242W (Tc)
41mOhm @ 30A, 12V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
EC4404C-TL
onsemi

NCH 1.5V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
package: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMT15H017SK3-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2344 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
package: -
Request a Quote
MOSFET (Metal Oxide)
150 V
68A (Tc)
8V, 10V
4V @ 250µA
34 nC @ 10 V
2344 pF @ 75 V
±20V
-
1.7W (Ta)
18.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IMZ120R350M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
package: -
Voorraad759
SiCFET (Silicon Carbide)
1200 V
4.7A (Tc)
15V, 18V
5.7V @ 1mA
5.3 nC @ 18 V
182 pF @ 800 V
+23V, -7V
-
60W (Tc)
350mOhm @ 2A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
NVMFS6H848NLT1G
onsemi

MOSFET N-CH 80V 13A/59A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
package: -
Voorraad3.855
MOSFET (Metal Oxide)
80 V
13A (Ta), 59A (Tc)
4.5V, 10V
2V @ 70µA
25 nC @ 10 V
1420 pF @ 40 V
±20V
-
3.7W (Ta), 73W (Tc)
8.8mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads